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LED chip manufacturing method of high extraction external quantum efficiency

An external quantum efficiency, LED chip technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as high equipment requirements, abnormal chip electrical properties, uncontrolled processes, etc., to improve luminous efficiency, process controlled, An effect that increases the chance of light exiting

Inactive Publication Date: 2015-08-19
合肥彩虹蓝光科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the surface roughening methods that have been proposed so far, although the brightness of LEDs has been improved to varying degrees, these methods have disadvantages such as high equipment requirements, uncontrolled processes, and other electrical abnormalities of the chip.

Method used

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  • LED chip manufacturing method of high extraction external quantum efficiency
  • LED chip manufacturing method of high extraction external quantum efficiency
  • LED chip manufacturing method of high extraction external quantum efficiency

Examples

Experimental program
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Effect test

Embodiment 1

[0026] Improving the Quantum Efficiency of LED Chips by Opening P-GaN Microholes

[0027] (1) Epitaxial growth: MOCVD is used to grow the epitaxial layer structure on the sapphire substrate;

[0028] (2) Preparation of P-GaN micropores: The prepared micropore patterns are transferred to the epitaxial P-GaN layer by ICP etching. The micropores are circular holes with a diameter of 1 micron and a period of 3. AZ-510 Photoresist, stepping exposure machine for pattern preparation; the etching power of the upper electrode is 300W, the power of the lower electrode is 60W, and the etching gas and flow rate are respectively: Cl 2 60sccm, BCl 3 20 sccm, Ar 5 sccm, and etching time 45 s, the epitaxial wafer was etched to remove photoresist and clean.

[0029] (3) Pattern preparation: The epitaxy after microhole preparation is prepared for photoresist pattern, and is transferred to the epitaxial structure by ICP etching method. The pattern depth reaches the N-GaN layer, and the etching...

Embodiment 2

[0034] Improving the Quantum Efficiency of LED Chips by Opening ITO Microholes

[0035] (1) Epitaxial growth: MOCVD is used to grow the epitaxial layer structure on the sapphire substrate;

[0036] (2) Pattern preparation: Prepare the photoresist pattern of the epitaxial wafer after epitaxial growth, and transfer it to the epitaxial structure by ICP etching method. The depth of the pattern reaches the N-GaN layer, and the etching depth is about 1.1um. The photolithography pattern is prepared according to the version requirements.

[0037] (3) ITO thin film deposition: After the above-mentioned treatment, epitaxy is cleaned, and an ITO thin film is deposited by E-Gun / sputtering, with a deposition thickness of 60 nm.

[0038] (4) Preparation of ITO micropores: The prepared micropore pattern is transferred to the ITO layer by ICP etching (etching). Glue, stepping exposure machine carries out graphic preparation; Its ICP etching: upper electrode power selects 400W for use, lower...

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Abstract

The invention provides an LED chip manufacturing method of high extraction external quantum efficiency. The method comprises the following steps: a step (1) of growing a GaN layer, an N-GaN layer, a quantum well layer, a P-GaN layer and a deposition ITO layer on a graphical substrate at one time; a step (2) of coating a layer of photoresistive liquid on the surface of the P-GaN layer or the ITO in a suspension manner; a step (3) of performing yellow light technologies such as pattern exposure, development and baking on the photoresistive liquid or adopting a nanometer impression mode to prepare a pattern; and a step (4) of selecting an ICP or wet etching method to transfer the pattern to an epitaxial wafer or the ITO layer. According to the invention, micropores are formed in the P-GaN layer or the ITO layer, so that on one hand, phenomena that light is reflected when passing through interfaces between the P-GaN layer, ITO and SiO2 and the air are prevented, and on the other hand, light absorption of the P-GaN layer and the ITO is lowered, the probability of light emission is effectively increased, and the luminous efficiency is improved. The method provided by the invention is easy to realize, controllable in process, and convenient in industrialized production via the conventional technology.

Description

technical field [0001] The invention relates to the technical field of manufacturing methods of light-emitting diodes, in particular to a method for manufacturing LED chips with high extraction external quantum efficiency. Background technique [0002] Due to the advantages of high color purity, fast response, small size, good reliability, long life, and environmental protection, LED has undoubtedly become the most important light source technology. Generally, epitaxial wafers on sapphire substrates are used to prepare high-brightness GaN-based LEDs. How to improve the luminous efficiency has always been the focus of research. [0003] The luminous efficiency of LED mainly has three factors: the internal quantum efficiency of the device, the carrier injection efficiency and the light output efficiency. At present, for GaN-based LED devices, the internal quantum efficiency, current-carrying efficiency and The sub-injection efficiency has reached a relatively high level, but...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCH01L33/007H01L33/0075
Inventor 吕振兴
Owner 合肥彩虹蓝光科技有限公司
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