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121results about How to "Good periodicity" patented technology

Gas compressor plane cascade experimental system with suction baffle structure

The invention provides a gas compressor plane cascade experimental system with a suction baffle structure. The gas compressor plane cascade experimental system comprises a suction device and a plane cascade experimental device. The plane cascade experimental device comprises a left end plate, a right end plate, an upper baffle, a plurality of experimental blades and a lower baffle, wherein the upper baffle is arranged between the left end plate and the right end plate, and the multiple experimental blades are distributed at intervals. The upper baffle and the lower baffle are connected between the left end plate and the right end plate through fixing shafts. The upper baffle is provided with suction holes. Left end plate suction holes are formed in the left end plate, and right end plate suction holes are formed in the right end plate. The suction holes are connected with a vacuum pump through a pipeline. A three-hole probe 1 is arranged between the left end plate and the right end plate. In the experimental process, the upper baffle and the lower baffle are adjusted so that a cascade can be good in periodicity, the boundary layer of incoming flow is sucked through the left end plate suction holes and the right end plate suction holes, the influence area of the boundary layer is reduced, and uniform incoming flow is achieved. The gas compressor plane cascade experimental system with the suction baffle structure is an effective path for exploring improvement of the performance of a gas compressor, the influence of the boundary layer of the incoming flow is reduced, and meanwhile, the periodicity of the plane cascade is improved.
Owner:DALIAN MARITIME UNIVERSITY

Rolling bearing early composite fault feature extraction method based on progressive VMD

PendingCN111178318AGood periodicityOvercoming the shortcoming of easy failure of fault diagnosisMachine part testingCharacter and pattern recognitionAlgorithmFeature extraction
The invention discloses a rolling bearing early composite fault feature extraction method based on progressive VMD. The method comprises the steps of 1, installing an acceleration sensor near a rolling bearing to collect vibration signals during bearing operation; 2, decomposing the acquired vibration signal by using a progressive VMD to obtain a series of decomposed modes; 3, screening the modesobtained after decomposition by using a dual screening criterion based on kurtosis and an energy fluctuation factor to determine a fault mode, and realizing reconstruction of the fault mode; 4, initializing the range and the search step length of the balance parameter alpha, repeating the step 2 and the step 3 for different alpha values, calculating the EFF value of the reconstruction mode, the maximum EFF value corresponding to the optimal alpha value, and then determining the reconstruction mode under the optimal alpha value; and 5, demodulating the reconstructed mode by using TEO to obtaina TEO spectrum, and obtaining a diagnosis result in combination with the bearing related fault characteristic frequency. On the basis of an EEMD recursion idea, the invention provides a progressive decomposition VMD method.
Owner:SOUTHEAST UNIV

Method for constructing organic liquid crystal molecule single-crystal micro-wire patterned array by nanoimprint technology

The invention discloses a method for constructing an organic liquid crystal molecule single-crystal micro-wire patterned array by a nanoimprint technology. The method is divided into two parts; one part is a preparation of an imprint template; the other part is a preparation of an imprint base; the preparation of the imprint template comprises the following steps: firstly, cleaning a SiO2/Si wafer base; secondly, carrying out positive photoresist photoetching and developing on the base to obtain an array pattern; thirdly, etching the photoetched SiO2/Si wafer base by a reactive ion etching machine; fourthly removing the photoresist and obtaining an uneven template periodically arranged; fifthly spinning perfluorinated resin on the SiO2/Si wafer base; and finally heating to finish the preparation of the imprint template; the preparation of the imprint base comprises the following steps: firstly, taking one cleaned SiO2/Si wafer; secondly, lifting an organic small molecule membrane from the base on a step-by-step precision lifting platform to finish the preparation of the imprint base; the imprint template covers the base; certain pressure is applied; the imprint template is heated to the melting points of organic small molecules; heating is stopped after the temperature is kept constant for 15 minutes; the imprint template is cooled to room temperature; and the base is taken out, so as to obtain the periodic large-area organic small-molecule single-crystal micro-wire patterned array.
Owner:SUZHOU UNIV

Method for preparing bismuth nano wire array thermoelectric materials

The invention discloses a method for preparing bismuth nano wire array thermoelectric materials. The method is to take a high-purity BiCl3, glycerol and ammonia water solution as an electrodeposition solution, adopt electrochemical technology and utilize cyclic voltammetry to perform electrodeposition on an alumina template, and finally obtain the one-dimensional orderly Bi nano wire array thermoelectric materials with high thermoelectric conversion efficiency. The invention has simple preparation method and high filling rate; the maximum characteristic of the materials is that the materials can receive various forms of heat energy (including various types of radiant heat, solar energy, body temperature, heat generated in the system operation process, various types of waste heat and the like) from the environment and highly efficiently and directly convert the heat energy into electric energy which is then outputted; and due to the characteristics of the special high-density nano wire array structure, oxidation resistance, high temperature resistance, high field emission current density, low turn-on field, good emission stability and the like, the application of the materials to field emission microelectronic devices as cathode materials can be realized and the materials have wide commercial application prospect.
Owner:EAST CHINA NORMAL UNIVERSITY

Single aligned carbon nano tube jet-printing arrangement method

The invention provides a single aligned carbon nano tube jet-printing arrangement method. The method comprises the steps that a substrate is modified with octadecyltrichlorosilane (OTS), so that the surface of the substrate has a hydrophobic property; precise control over the thin film position, the aligned density and patterning of aligned carbon nano tubes is achieved on the functional hydrophobic substrate through ink-jet printing, and a carbon nano tube thin film which is uniform in density and consistent in orientation and has different patterns is arranged. By means of the method, the carbon nano tube arrangement area of the size from several micrometers to the wafer level can be effectively controlled; the problems can be solved that in all existing arrangement methods, the arrangement position, the arrangement orientation, the arrangement density and the thin film array patterning of one-dimensional nano materials on the substrate cannot be efficiently and precisely controlled;the method can be widely used for preparing various high-performance photoelectric devices, logic circuits and functional thin films based on the carbon nano tubes, and the method also has a wide application prospect in the field of flexible wearable nano devices.
Owner:INST OF PHYSICS - CHINESE ACAD OF SCI

Laser-chemical preparation method of monocrystal silicon substrate sub-micron pyramid structure

The invention discloses a laser-chemical preparation method of a monocrystal silicon substrate sub-micron pyramid structure, belonging to the field of crystalline silicon surface micro-structure preparation. The preparation method comprises the following steps: firstly, performing pretreatment on monocrystal silicon, and covering periodically close-packed microspheres on the surface of monocrystal silicon; performing irradiation by adopting a 248nm laser, wherein the single pulse energy density is 100-400mJ/cm<2>; performing certain treatment on a monocrystal silicon sample after irradiation, and removing the residual microspheres on the surface; after removal ends, dipping the monocrystal silicon sample into a sodium hydroxide aqueous solution containing ethanol under the environment that the water bath temperature is 70-80 DEG C, eroding for 10-30 seconds, taking out the monocrystal silicon sample, and washing by using deionized water to obtain a monocrystal silicon piece with a normal pyramid array. The laser-chemical preparation method disclosed by the invention exerts the laser controllability, can be used for rapidly and simply preparing the pyramid array with periodicity and uniformity, has high controllability in pyramid forming, can be used for adjusting the separation distance and morphology features of the pyramid array, also is low in raw material cost, and has relatively high practicability.
Owner:BEIJING UNIV OF TECH

Three-dimensional nano-structure array and preparation method and application thereof

The invention discloses a three-dimensional nano-structure array and a preparation method and an application thereof. The three-dimensional nano-structure array comprises regularly-arranged semiconductor nanowire arrays and semiconductor nanowire arrays grown in a radiation manner thereon. The nanowires grown in the prepared three-dimensional nano-structure array in a radiation manner are relatively small in diameters and relatively high in length and density, so that the specific surface area of the material is greatly enlarged, thereby enlarging the light absorption area of the three-dimensional nano-structure array and obviously reinforcing light absorption compared with a one-dimensional nanometer array; meanwhile, the fine and tiny nanowires are in radiation growth on the outer side of the regularly-arranged nanowires, and the nanowires grown in a radiation manner are relatively high in density, so that the light rays incident from each angle can be well absorbed, and sensitivity to the light ray incident angles of the three-dimensional nano-structure array is lowered; and when the three-dimensional nano-structure array is applied in the photovoltaic field, the problem of increasing of cost caused by a condition that the angle of a solar battery is changed constantly along with changes of illumination angles can be avoided.
Owner:SHANGQIU NORMAL UNIVERSITY
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