Method for preparing bismuth nano wire array thermoelectric materials

A technology of line array and thermoelectric materials, which is applied in the field of thermoelectric materials and semiconductor materials preparation, can solve the problems of low filling rate of nanowires, inaccurate control of deposition time, inability to control large area and single size, etc., and achieve wide commercial application Foreground, launch stability, low cost effect

Inactive Publication Date: 2009-09-30
EAST CHINA NORMAL UNIVERSITY
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Problems solved by technology

The filling rate of filled nanowires prepared by direct current is low, and the nanowires have various sizes, which cannot control a single size in a large

Method used

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  • Method for preparing bismuth nano wire array thermoelectric materials
  • Method for preparing bismuth nano wire array thermoelectric materials
  • Method for preparing bismuth nano wire array thermoelectric materials

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Embodiment 1

[0018] a) Cut the alumina template into small pieces of 1cm×2cm, and then ultrasonically clean them in alcohol solution.

[0019] b), prepare electrodeposition solution, this solution is made of 10g / l BiCl 3 , 50g / l tartaric acid, 95g / l glycerol and 50g / l NaCl solution, the pH of the solution was adjusted to 0.9 with dilute hydrochloric acid.

[0020] c) Use CHl660C electrochemical workstation to conduct electrodeposition on alumina template, and select cyclic voltammetry, step 1: -1v step time 20ms; step 2: 0V step time 10ms; step 3: 1V The step time is 30ms as a cycle; the step cycle is cycled, the deposition time is controlled for 120 minutes, the electrochemical deposition software is closed, and the deposition is ended.

[0021] d) After the electrodeposition is completed, the template is taken out, placed in deionized water, ultrasonically cleaned, then placed in a NaOH (0.5mol / l) solution, and left to stand for 30 minutes to remove the aluminum oxide film.

[0022] e)...

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Abstract

The invention discloses a method for preparing bismuth nano wire array thermoelectric materials. The method is to take a high-purity BiCl3, glycerol and ammonia water solution as an electrodeposition solution, adopt electrochemical technology and utilize cyclic voltammetry to perform electrodeposition on an alumina template, and finally obtain the one-dimensional orderly Bi nano wire array thermoelectric materials with high thermoelectric conversion efficiency. The invention has simple preparation method and high filling rate; the maximum characteristic of the materials is that the materials can receive various forms of heat energy (including various types of radiant heat, solar energy, body temperature, heat generated in the system operation process, various types of waste heat and the like) from the environment and highly efficiently and directly convert the heat energy into electric energy which is then outputted; and due to the characteristics of the special high-density nano wire array structure, oxidation resistance, high temperature resistance, high field emission current density, low turn-on field, good emission stability and the like, the application of the materials to field emission microelectronic devices as cathode materials can be realized and the materials have wide commercial application prospect.

Description

technical field [0001] The invention relates to the preparation of thermoelectric materials and semiconductor materials, in particular to a method for preparing thermoelectric materials with periodically arranged Bi nanowires. technical background [0002] Bismuth is a typical semimetal material. Due to its characteristics such as highly anisotropic Fermi surface, very small electronic effective mass, large carrier mean free path and semimetal-semiconductor transition, it is widely used in thermoelectric, sensor and giant magnetic fields. Resistors and other fields have extremely broad application prospects. Theoretical research shows that due to the quantum confinement effect, the thermoelectric performance of bismuth will be significantly improved with the reduction of the material dimension. In addition, with the change of nanowire diameter and orientation, the electrical transport and thermoelectric properties of bismuth will be significantly different. Therefore, it i...

Claims

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Application Information

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IPC IPC(8): C25D3/54
Inventor 张志
Owner EAST CHINA NORMAL UNIVERSITY
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