Three-dimensional nano-structure array and preparation method and application thereof

Abstract

The invention discloses a three-dimensional nano-structure array and a preparation method and an application thereof. The three-dimensional nano-structure array comprises regularly-arranged semiconductor nanowire arrays and semiconductor nanowire arrays grown in a radiation manner thereon. The nanowires grown in the prepared three-dimensional nano-structure array in a radiation manner are relatively small in diameters and relatively high in length and density, so that the specific surface area of the material is greatly enlarged, thereby enlarging the light absorption area of the three-dimensional nano-structure array and obviously reinforcing light absorption compared with a one-dimensional nanometer array; meanwhile, the fine and tiny nanowires are in radiation growth on the outer side of the regularly-arranged nanowires, and the nanowires grown in a radiation manner are relatively high in density, so that the light rays incident from each angle can be well absorbed, and sensitivity to the light ray incident angles of the three-dimensional nano-structure array is lowered; and when the three-dimensional nano-structure array is applied in the photovoltaic field, the problem of increasing of cost caused by a condition that the angle of a solar battery is changed constantly along with changes of illumination angles can be avoided.

Description

technical field

[0001] The invention belongs to the technical field of solar photovoltaic cells, and in particular relates to a three-dimensional nanostructure array, a preparation method and an application thereof. Background technique

[0002] With the development of nanotechnology and the improvement of people's requirements for photoelectric conversion efficiency, more and more researchers have begun to prepare nano-array solar cells, such as nano-rods, nano-wires, and nano-ribbon array solar cells. Among them, since the light absorption of nanowire solar cells occurs in the axial direction of the nanowires, the optical path is effectively increased and the absorption of light is increased; the separation of carriers occurs in the radial direction of the nanowires, which reduces the carrier density. The advantages such as the probability of recombination have received more attention.

[0003] Chinese patent CN 102227002B discloses a polycrystalline silicon nanowire sola...

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