Quantum dot light emitting diode and manufacturing method

A technology of quantum dot light-emitting and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of low light extraction efficiency, and achieve the effect of increasing the output area and increasing the output cross-sectional area.

Pending Publication Date: 2022-06-03
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Existing QLEDs include bottom-emitting quantum dot light-emitting diodes and top-emitting quantum dot light-emitting diodes. However, both bottom-emitting quantum dot light-emitting diodes and top-emitting quantum dot light-emitting diodes have the problem of low light extraction efficiency.

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  • Quantum dot light emitting diode and manufacturing method
  • Quantum dot light emitting diode and manufacturing method
  • Quantum dot light emitting diode and manufacturing method

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Embodiment Construction

[0041] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0042] In order to make the above objects, features and advantages of the present invention more clearly understood, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.

[0043] refer to figure 1 , figure 1 This is a schematic structural diagram of a quantum dot light-emitting diode according to an embodiment of the present invention. refer to figur...

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Abstract

The invention provides a quantum dot light-emitting diode and a manufacturing method thereof. The quantum dot light-emitting diode comprises two structures of a top-emitting quantum dot light-emitting diode and a bottom-emitting quantum dot light-emitting diode. The light path adjusting layer is additionally arranged on the light-emitting side of the top-emitting quantum dot light-emitting diode or the light path adjusting layer is additionally arranged on the light-emitting side of the bottom-emitting quantum dot light-emitting diode, and the light path adjusting layer is additionally arranged, so that the emergent section area of light emitted by the quantum dot light-emitting diode can be increased; and the light path adjusting layer can refract the light emitted by the quantum dot light emitting diode, so that light path adjustment is carried out on the light, and the light emitting probability can be improved and the light emitting uniformity of each angle of the device can be improved through light path adjustment. The light extraction efficiency of the quantum dot light emitting diode can be obviously improved by increasing the light emitting area, improving the light emitting probability and improving the light emitting uniformity of each angle of the device.

Description

technical field [0001] The present invention relates to the field of display technology, and more particularly, to a quantum dot light-emitting diode and a manufacturing method. Background technique [0002] With the continuous exploration and research of scientific research institutions and enterprises, quantum dot light-emitting diode (Quantum Dot Light Emitting Diodes, QLED) devices have achieved major breakthroughs in the display field. Although the structure of QLED is very similar to that of organic light-emitting diodes (Organic Light-Emitting Diodes, OLED), the light-emitting material of OLED is made of organic materials, and the lifespan is an insurmountable fatal injury of the organic material itself; while the light-emitting material of QLED is made of inorganic materials. Its material properties are more stable, longer life and lower cost. And the color performance of QLED is more perfect, and the color gamut can easily reach more than 90% of the most stringent ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/50H01L51/56
CPCH10K50/115H10K50/85H10K50/858H10K71/00
Inventor 王福芝刘怡娜朱晓东王洋李美成白一鸣
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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