Overall wet chemical preparation method for nanoscale patterning sapphire substrate

Abstract

The invention discloses an overall wet chemical preparation method for a nanoscale patterning sapphire substrate. The method comprises the following steps that: a single-layer colloid crystal film is deposited on the sapphire substrate; after heat treatment, tetraethoxysilane sol is filled into gaps of nano microspheres, and a filling layer is formed on part of the surface of the sapphire substrate after drying; the colloid crystal film is removed; the filling layer serves as an etching mask so as to etch the sapphire substrate through a wet method, and periodicity patterns with the distribution of the nano microspheres are transferred onto the substrate; and the etching mask is removed, so as to obtain sapphire substrate with the nanoscale patterns. The overall wet chemical preparation method has the advantage that the whole process can be completed thoroughly in a common chemical laboratory without adopting any semiconductor process equipment. The nanoscale patterning sapphire substrate can reduce the dislocation density in chips effectively, improve the crystal quality of extension materials and increase the probability of light emitting from the sapphire substrate, so as to improve the light extraction efficiency of an LED (light-emitting diode).

Description

technical field [0001] The invention relates to a method for preparing a nanoscale patterned sapphire substrate, in particular to an all-wet chemical preparation method for a nanoscale patterned sapphire substrate suitable for light-emitting diode (LED) epitaxy. Background technique [0002] Gallium nitride (GaN)-based light-emitting diode (LED), as a new type of high-efficiency solid energy, will become the third generation of lighting tools after incandescent lamps and fluorescent lamps in the history of human lighting. Sapphire substrate has become the most widely used material for epitaxial GaN due to its advantages of high temperature resistance and high mechanical strength. However, the huge lattice mismatch and thermal expansion coefficient mismatch between the sapphire substrate and the GaN material lead to a large number of defects inside the GaN material, which reduces the internal quantum efficiency. On the other hand, because the refractive index of GaN is highe...

AI Technical Summary

Problems solved by technology

The traditional patterned sapphire substrate technology requires the use of yellow light lithography and semiconductor process equipment such as plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition) when preparing the mask layer, which has problems such as high cost and low yield; if you want to To form nanoscale periodic structures, the submicron masks used are expensive, and the cost of patterning below 500nm is higher

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