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LED transparent conductive layer roughening method and vacuum apparatus

A transparent conductive layer and roughness technology, applied in chemical instruments and methods, circuits, electrical components, etc., can solve problems such as complex process, increase LED forward voltage, damage device performance, etc., achieve obvious roughening effect and improve light output efficiency, reducing the effect of total reflection

Active Publication Date: 2014-09-24
JIANGXI EPITOP OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are roughly two types of methods for roughening the P-GaN layer. One is to achieve the roughening effect by performing high-doped Mg or low-temperature amorphous growth on the surface of the P-GaN layer. This method is simple and easy to implement, but it is easy Increase the forward voltage of the LED, destroying the performance of the device
The second type is to perform wet or dry etching on the P-GaN layer to obtain a roughening effect. The typical wet etching solution is a high-temperature solution of sulfuric acid and phosphoric acid. This method has high cost, safety and controllability Or, make a layer of mask on the surface of the P-GaN layer, and dry etch the surface of the P-GaN layer. This method is complicated in process and high in cost.

Method used

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  • LED transparent conductive layer roughening method and vacuum apparatus
  • LED transparent conductive layer roughening method and vacuum apparatus
  • LED transparent conductive layer roughening method and vacuum apparatus

Examples

Experimental program
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Effect test

Embodiment 1

[0023] figure 2 The schematic flow sheet of the roughening method of LED transparent conductive layer provided by the present invention, as figure 2 As shown, the method includes:

[0024] It should be noted that metal-organic chemical vapor deposition equipment (Metal-organic Chemical Vapor Deposition, MOCVD) can be used to grow epitaxial wafers, that is, epitaxial structures, on substrates such as sapphire substrates, and evaporate transparent conductive layers. The subject of S101 and S102 is MOCVD, and the subject of S103 is vacuum equipment for example, but it is not limited thereto.

[0025] S101. MOCVD grows an epitaxial wafer on a sapphire substrate.

[0026] Further, the epitaxial wafer includes a U-GaN layer, an N-GaN layer, a multi-quantum well layer and a P-GaN layer.

[0027] S102, MOCVD forms and vapor-deposits a transparent conductive layer on the epitaxial wafer after cleaning.

[0028] Further, a layer of transparent indium tin oxide ITO transparent cond...

Embodiment 2

[0033] image 3 The schematic flow chart of the roughening method of another LED transparent conductive layer provided by the present invention, such as image 3 As shown, the method includes:

[0034] S201. MOCVD grows an epitaxial wafer on a sapphire substrate.

[0035] S202. MOCVD generates and vapor-deposits an ITO layer not smaller than 200 nm on the cleaned epitaxial wafer.

[0036] S203. The vacuum equipment heats the cavity at 90°C-95°C within 200s-250s, and uses the pressure difference between the cavity and the gas cylinder under the pressure of 100mtorr-500mtorr to use nitrogen as the carrier gas at 200sccm-300sccm. The flow rate is to bring the volatile matter of the ITO layer etching solution into the cavity to etch the ITO layer so that the roughness is 90nm-100nm.

[0037] It should be noted that the vacuum equipment can also include a butterfly valve for controlling the opening and closing of the connecting pipeline between the mechanical pump and the cavity...

Embodiment 3

[0041] Figure 4 A schematic flow diagram of another method for roughening the transparent conductive layer of LED provided by the present invention, such as Figure 4 As shown, the method includes:

[0042] When thickening the ITO film, the optical power of the chip will decrease, and the forward voltage of the chip will also decrease. If you want to make some chip products with low forward voltage, you can consider thickening the ITO film, and at the same time roughen the ITO film. In this way, the forward voltage can be reduced without loss of optical power.

[0043] S301. MOCVD grows an epitaxial wafer on a sapphire substrate.

[0044] S302. MOCVD generates and evaporates an ITO layer not less than 450 nm on the cleaned epitaxial wafer.

[0045] S303. The vacuum equipment heats the cavity at 70°C-80°C within 400s-500s, and uses the pressure difference between the cavity at a pressure of 100mtorr-500mtorr and the gas cylinder to use nitrogen as a carrier gas at 200sccm-3...

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Abstract

The invention provides an LED transparent conductive layer roughening method and a vacuum apparatus. The method comprises the following steps: an epitaxial wafer is grown on a substrate; a transparent conductive layer is evaporated onto the cleaned epitaxial wafer; evacuation is performed on a cavity at which the transparent conductive layer is located; and in a preset time, the cavity is heated according to a preset temperature and the volatile matter of the transparent conductive layer corrosive liquid is brought into the cavity by taking nitrogen as the carrier gas according to a preset carrier gas flow through the pressure difference between the cavity in a preset pressure and a gas cylinder, corrosion is performed on the transparent conductive layer, and the volatile matter of the conductive layer corrosive liquid is stored into the gas cylinder. Through the controllable roughening of the transparent conductive layer, the total reflection of the light in the LED can be reduced so as to improve the light outgoing efficiency of the LED.

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting diodes (Light-Emitting Diode, LED), in particular to a roughening method and vacuum equipment for an LED transparent conductive layer. Background technique [0002] Gallium nitride GaN material, as a semiconductor material with a direct band gap, has the characteristics of high thermal conductivity, high hardness, high chemical stability, and high electrical conductivity. It has great application potential in solid-state lighting and optical information technology. The existing GaN material growth and chip manufacturing methods are mainly: growing epitaxial wafers on sapphire substrates, that is, sequentially growing U-doped gallium nitride U-GaN layers, N-doped gallium nitride N-GaN layers, multiple quantum wells Layer and P-doped gallium nitride P-GaN layer structure, and then make P and N electrodes on this structure by semiconductor processing method, and then separate the single c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00C30B33/10
CPCC30B33/10H01L33/0066H01L33/0075
Inventor 刘伟郑远志陈向东康建梁旭东
Owner JIANGXI EPITOP OPTOELECTRONICS
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