LED transparent conductive layer roughening method and vacuum apparatus

Abstract

The invention provides an LED transparent conductive layer roughening method and a vacuum apparatus. The method comprises the following steps: an epitaxial wafer is grown on a substrate; a transparent conductive layer is evaporated onto the cleaned epitaxial wafer; evacuation is performed on a cavity at which the transparent conductive layer is located; and in a preset time, the cavity is heated according to a preset temperature and the volatile matter of the transparent conductive layer corrosive liquid is brought into the cavity by taking nitrogen as the carrier gas according to a preset carrier gas flow through the pressure difference between the cavity in a preset pressure and a gas cylinder, corrosion is performed on the transparent conductive layer, and the volatile matter of the conductive layer corrosive liquid is stored into the gas cylinder. Through the controllable roughening of the transparent conductive layer, the total reflection of the light in the LED can be reduced so as to improve the light outgoing efficiency of the LED.

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting diodes (Light-Emitting Diode, LED), in particular to a roughening method and vacuum equipment for an LED transparent conductive layer. Background technique [0002] Gallium nitride GaN material, as a semiconductor material with a direct band gap, has the characteristics of high thermal conductivity, high hardness, high chemical stability, and high electrical conductivity. It has great application potential in solid-state lighting and optical information technology. The existing GaN material growth and chip manufacturing methods are mainly: growing epitaxial wafers on sapphire substrates, that is, sequentially growing U-doped gallium nitride U-GaN layers, N-doped gallium nitride N-GaN layers, multiple quantum wells Layer and P-doped gallium nitride P-GaN layer structure, and then make P and N electrodes on this structure by semiconductor processing method, and then separate the single c...

AI Technical Summary

Problems solved by technology

At present, there are roughly two types of methods for roughening the P-GaN layer. One is to achieve the roughening effect by performing high-doped Mg or low-temperature amorphous growth on the surface of the P-GaN layer. This method is simple and easy to implement, but it is easy Increase the forward voltage of the LED, destroying the performance of the device

The second type is to perform wet or dry etching on the P-GaN layer to obtain a roughening effect. The typical wet etching solution is a high-temperature solution of sulfuric acid and phosphoric acid. This method has high cost, safety and controllability Or, make a layer of mask on the surface of the P-GaN layer, and dry etch the surface of the P-GaN layer. This method is complicated in process and high in cost.

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