Non-volatile resistor change type memory with self-rectification effect

A resistance conversion, non-volatile technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as resistance conversion device conversion, and achieve the effect of improving storage density, simple structure, and easy integration

Inactive Publication Date: 2010-07-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

However, the current density of current rectifier diodes can only provide up to 10 5 A / cm 2 , when the resistance transition device shrinks to tens of nanometers, the current density provided by the rectifier diode is not enough to make the resistance transition device transition

Method used

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  • Non-volatile resistor change type memory with self-rectification effect
  • Non-volatile resistor change type memory with self-rectification effect
  • Non-volatile resistor change type memory with self-rectification effect

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Embodiment Construction

[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0030] Such as image 3 as shown, image 3 It is a structural schematic diagram of a binary metal oxide nonvolatile resistance transition memory device with a self-rectification effect. The nonvolatile resistance transition memory consists of an upper Pt electrode 301, a lower Pt electrode 302, a binary transition metal oxide Thin film 303 and PtO x interface layer 304, wherein the binary transition metal oxide thin film 303 is located between the upper Pt electrode and the lower Pt electrode, and the PtO x The interface layer 304 is located between the binary transition metal oxide thin film and the lower Pt electrode.

[0031] The upper Pt electrode and the lower Pt electrode are made by electron beam evaporation, ma...

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Abstract

The invention discloses a non-volatile resistor change type memory with the self-rectification effect. The non-volatile resistor change type memory comprises an upper Pt electrode, a lower Pt electrode, a binary transition metal oxide thin film and a PtOx boundary layer, wherein the binary transition metal oxide thin film is positioned between the upper Pt electrode and the lower Pt electrode, and the PtOx boundary layer is positioned between the binary transition metal oxide thin film and the lower Pt electrode. The non-volatile resistor change type memory with the self-rectification effect has the advantages of simple structure, easy integration, low cost, compatible process with the traditional silicon planer CMOS, and the like, and is beneficial to the wide popularization and the application of the invention.

Description

technical field [0001] The invention relates to the technical field of microelectronic devices and memories, in particular to a nonvolatile resistance transition memory with self-rectification effect based on the resistance transition characteristics of binary transition metal oxides. Background technique [0002] Recently, resistive random access memory (RRAM) has become prominent due to its simple device structure (metal-insulator-metal), high device density, low power consumption, fast programming / erasing speed, etc. Advantages, so it has attracted great attention from large companies and research institutes at home and abroad. [0003] Resistance transition memory technology is based on the fact that the resistance of the material can be reversibly switched between a high resistance state and a low resistance state under voltage control. There are many types of materials that have been proved to have resistance switching properties: (1) organic polymers, such as polyimi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L29/861G11C11/56
Inventor 刘明刘琦龙世兵管伟华
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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