Semiconductor device and method of fabricating the same

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as damage to the contact characteristics and reliability of semiconductor devices

Active Publication Date: 2008-04-02
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Accordingly, contact characteristics and re...

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  • Semiconductor device and method of fabricating the same
  • Semiconductor device and method of fabricating the same
  • Semiconductor device and method of fabricating the same

Examples

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Embodiment Construction

[0015] However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

[0016] Therefore, in the embodiments of the present invention, when detailed descriptions of known processes, structures and techniques involved herein would obscure the subject matter of the present invention, such detailed descriptions will be omitted.

[0017] The terminology used herein is for the purpose of describing specific embodiments only, and is not intended to limit the present invention. As used herein, singular forms are intended to include plural forms unless the context clearly dictates otherwise. It should also be understood that when applied to this specification, the word "comprising" refers to the existence of listed elements, steps, operations and / or components, but does not exclude one or more other elements, steps, operations and / or components existence or increase. Additionally, the term "and / or" includes...

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Abstract

A semiconductor device comprises: a first stress film covering af first transistor zone and at least a part of a third gate electrode in the boundary zone; a second stress film covering a second transistor zone and overlapping with at least a part of the first stress film on the third gate electrode in the boundary zone; and an interlayer dielectric film formed on the first and the second stress films. The semiconductor device also comprises: a plurality of first contact hole passing through the interlayer dielectric film in the first transistor zone and the first stress film; a plurality of second contact hole passing through the interlayer dielectric film in the second transistor zone and the second stress film; and a third contact hole passing through the interlayer dielectric film in the interface zone, the second stress film and the first stress film. A depressed portion at the upper side of the third electrode formed on the third contact hole has a depth larger or equal to the depth of the depressed portion at the upper side of the first gate electrode of the first contact hole.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a semiconductor device including a double stress film and a manufacturing method thereof. Background technique [0002] Due to the high integration and high speed of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), various methods have been researched to form transistors that do not generate errors and have improved performance. In particular, a number of methods are under development aimed at increasing the mobility of electrons and holes to fabricate high-performance transistors. [0003] A method of applying physical stress to the channel region to change the energy band structure of the channel region, which aims to increase the mobility of electrons or holes, may be performed. For example, n-channel metal-oxide-semiconductor (NMOS) transistors have improved performance when tensile stress is applied to the channel, an...

Claims

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Application Information

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IPC IPC(8): H01L21/8238H01L21/768H01L27/092H01L23/522
CPCH01L21/76829H01L29/7843H01L21/823871H01L21/76832H01L21/76816H01L21/823807H01L21/76802H01L2924/0002H01L2924/00H01L21/31H01L21/8238H01L21/28
Inventor 南瑞佑文永俊慎烘縡李来寅
Owner SAMSUNG ELECTRONICS CO LTD
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