The invention belongs to the technical field of GaN pressure sensors, and particularly relates to a GaN
pressure sensor preparation method and device, the GaN
pressure sensor comprises a substrate, a source
electrode is arranged above the substrate, a drain
electrode is arranged above the source
electrode, a grid electrode and a channel structure are arranged between the drain electrode and the source electrode, the channel structure comprises a GaN layer and an AlGaN
barrier layer, and the GaN layer and the AlGaN
barrier layer are arranged on the substrate. The source electrode is composed of a plurality of annular structures, the annular structures are connected through connecting structures, channel structures are arranged on the inner edges and the outer edges of the annular structures, partition plates are arranged between the channel structures, high sensitivity is achieved, the multi-layer GaN / AlGaN channel structures increase the 2DEG density, the multi-annular source electrode enlarges the pressure contact area, and the high sensitivity is achieved. The two synergistically improve the current change rate, and the
pressure sensitivity is improved by 3-5 times compared with a traditional single-layer structure. The structure stability is that the partition plates separate adjacent channels to avoid current
crosstalk, and the substrate groove and the drain electrode are designed to be closed, so that
pressure transmission loss is reduced, and long-term working precision (drift rate is less than or equal to 0.5% / year) is ensured.