Chips for beam-film integrated arrangement resonant beam pressure sensing device and manufacturing method thereof

A technology of pressure sensor and manufacturing method, which is applied in the direction of force measurement by measuring the frequency change of the stressed vibrating element, and can solve the problems affecting beam vibration, adhesion, not small, at least greater than the thickness of the sacrificial layer, etc.

Inactive Publication Date: 2004-03-31
INST OF ELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are two types of manufacturing methods, one is beam-membrane split, which requires two silicon wafers to be combined into a whole through thinning and bonding processes. The disadvantage is that bonding is involved, the process is complicated, and the yield is not high; the other type of application It shows that micro-mechanical technology completes the fabrication of the beam membrane on a single silicon chip, and the sacrificial layer technology is often used to release the resonant beam. The sacrificial layer can be silicon dioxide, polysilicon, porous silicon, etc., and the porous silicon is relatively easy to manufacture and

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  • Chips for beam-film integrated arrangement resonant beam pressure sensing device and manufacturing method thereof
  • Chips for beam-film integrated arrangement resonant beam pressure sensing device and manufacturing method thereof
  • Chips for beam-film integrated arrangement resonant beam pressure sensing device and manufacturing method thereof

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Embodiment Construction

[0026] see figure 1 As shown, a resonant beam pressure sensor chip with a beam-membrane integrated structure of the present invention includes:

[0027] A silicon chip 11, on the silicon chip 11, one layer of silicon nitride film 12 is made, and described silicon chip 11 is a low-resistivity monocrystalline silicon chip; Described silicon nitride film 12 is the low pressure chemical vapor deposition LPCVD growth. Stressed thick silicon nitride, 2 microns thick or more.

[0028] A groove 17 is formed on the silicon nitride film 12 and the silicon wafer 11. The groove 17 is approximately I-shaped, forming two rectangular peninsulas 14, and the silicon nitride 12 on the two rectangular peninsulas 14 is connected to form a resonant beam 13; The peninsula 14 is in the shape of a cuboid, and its width is more than three times that of the resonant beam 13 .

[0029] The groove 17 on the silicon wafer 11 is surrounded by a rectangular frame 16 , and the bottom of the groove 17 is a ...

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Abstract

The invention discloses a beam- film integrated arrangement resonance beam pressure transducer chip and manufacturing method thereof, characterized by that, a resonant beam is made on the face side of a single silicon chip, and a pressure responsive film is made on the opposite side, wherein the resonant beam is supported by two peninsula type arrangements and accomplished by porous silicon sacrificing layer process, and low stress thick silicon nitride is selected as the making material. The invention not only simplifies the making process of the micro resonant type pressure transducer, but also increases the pressure sensitivity.

Description

technical field [0001] The invention relates to a method for manufacturing a microstructure sensor, in particular to a method for manufacturing a resonant pressure sensor chip with a beam-membrane integrated structure. Background technique [0002] Micromechanical resonant pressure sensor is known as a new generation of pressure sensor because of its high precision, good stability, small size, and easy mass production. Another typical application later. In order to isolate the medium to be measured and increase the pressure sensitivity, the microresonant pressure sensor usually does not directly reflect the change of pressure, that is, the external pressure to be measured does not directly act on the resonator, but indirectly changes the stiffness of the resonator through the pressure film. Thereby changing the resonant frequency belongs to the principle of secondary sensitivity. There are two types of manufacturing methods, one is beam-membrane split, which requires two s...

Claims

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Application Information

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IPC IPC(8): G01L1/10
Inventor 陈德勇崔大付王利
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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