Chips for beam-film integrated arrangement resonant beam pressure sensing device and manufacturing method thereof
A technology of a pressure sensor and a manufacturing method, which is applied in the direction of force measurement by measuring the frequency change of a stressed vibrating element, and can solve problems such as adhesion, affecting beam vibration, and complex processes
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[0026] see figure 1 As shown, a resonant beam pressure sensor chip with a beam-membrane integrated structure of the present invention includes:
[0027] A silicon chip 11, on the silicon chip 11, one layer of silicon nitride film 12 is made, and described silicon chip 11 is a low-resistivity monocrystalline silicon chip; Described silicon nitride film 12 is the low pressure chemical vapor deposition LPCVD growth. Stressed thick silicon nitride, 2 microns thick or more.
[0028] A groove 17 is formed on the silicon nitride film 12 and the silicon wafer 11. The groove 17 is approximately I-shaped, forming two rectangular peninsulas 14, and the silicon nitride 12 on the two rectangular peninsulas 14 is connected to form a resonant beam 13; The peninsula 14 is in the shape of a cuboid, and its width is more than three times that of the resonant beam 13 .
[0029] The groove 17 on the silicon wafer 11 is surrounded by a rectangular frame 16 , and the bottom of the groove 17 is a ...
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