Piezoelectric film bulk acoustic wave resonator and preparation method thereof

A technology of bulk acoustic wave resonator and piezoelectric film, applied in electrical components, impedance networks, etc., can solve problems such as poor thermal conductivity, and achieve the effects of improving mechanical strength, reducing process steps, and reducing process difficulty

Active Publication Date: 2017-10-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, compared with rigid materials, flexible materials have poor thermal conductivity, so the thermal stability and power capacity of

Method used

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  • Piezoelectric film bulk acoustic wave resonator and preparation method thereof
  • Piezoelectric film bulk acoustic wave resonator and preparation method thereof
  • Piezoelectric film bulk acoustic wave resonator and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0043] This embodiment provides a piezoelectric film bulk acoustic resonator, the structure of which is as follows figure 1 As shown, it includes a substrate 1 provided with vertical grooves, a patterned support layer 2, a low acoustic impedance layer 3 completely filling the surface of the substrate, a bottom electrode layer 4, a piezoelectric layer 5, and a top electrode layer 6; In this embodiment, the substrate material is silicon, the depth of the vertical grooves in the substrate is about 10um, the vertical grooves are square holes, the vertical grooves are arranged in an array, and the shape of the side view is a comb line. The low acoustic impedance layer is polyimide, the bottom electrode is molybdenum, the piezoelectric layer is aluminum nitride with C-axis orientation, and the uppermost top electrode is metal molybdenum.

[0044] The specific preparation process of the piezoelectric thin film bulk acoustic resonator includes the following steps:

[0045]Step 1. Us...

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PUM

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Abstract

The invention belongs to the technical field of a radio frequency MES (Micro Electro Mechanical System), and particularly provides a novel piezoelectric film bulk acoustic wave resonator and a manufacturing method thereof. The novel piezoelectric film bulk acoustic wave resonator comprises a substrate, a supporting layer, a bottom electrode layer, a piezoelectric layer and a top electrode layer; the substrate of the resonator is provided with a certain number of grooves for increasing an external surface area of the substrate; the supporting layer is arranged on the substrate, and low-acoustic-impedance flexible materials, such as polyimide and the like, are used for filling the insides of the grooves and the upper surface of the supporting layer; and then the bottom electrode layer, the piezoelectric layer and the top electrode layer are sequentially arranged on a low-acoustic-impedance layer. The novel piezoelectric film bulk acoustic wave resonator is novel in structure and simple to prepare, more importantly, can effectively solve the problems of poor thermal stability, insufficient power capacity and the like of a flexible substrate bulk acoustic wave resonator, and has excellent application prospect.

Description

technical field [0001] The invention belongs to the technical field of radio frequency micro-electromechanical systems (MEMS), and in particular relates to a novel piezoelectric film bulk acoustic wave resonator and a manufacturing method thereof. Background technique [0002] With the development of wireless communication systems in the direction of miniaturization, high frequency, and integration, traditional dielectric filters and surface acoustic wave filters are also difficult to meet the requirements of miniaturization and high frequency. The device has the incomparable size advantage of the ceramic dielectric filter, the incomparable operating frequency and power capacity advantages of the surface acoustic wave resonator; especially the MEMS technology is becoming more and more mature, and the thin film bulk acoustic resonator has become the development of today's wireless communication system. trend. [0003] The main part of the film bulk acoustic resonator is a "s...

Claims

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Application Information

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IPC IPC(8): H03H9/17H03H3/02
CPCH03H3/02H03H9/171H03H2003/023
Inventor 钟慧杨泰霍振选张根秦康宁张晨石玉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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