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X-band high gain and high efficiency triaxial relativistic klystron amplifier

A high-efficiency, high-gain technology, applied in klystrons, electron tubes with velocity/density modulated electron flow, coupling devices for time-of-flight electron tubes, etc., can solve problems such as complex injection structures and low output microwave power, Achieve the effects of reducing complexity, achieving angular uniformity, and suppressing frequency multiplier oscillations

Active Publication Date: 2019-04-09
NAT UNIV OF DEFENSE TECH
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Problems solved by technology

[0008] The technical problem to be solved by the present invention is: the present invention provides a high-gain, high-efficiency, high-power three-axis relative klystron amplifier in the X-band, which overcomes the complex injection structure in the existing X-band three-axis relativistic klystron amplifier ( Axial injection or lateral dual-port injection), gain (about 40dB), efficiency (<30%), and output microwave power (about 1GW) are relatively low. Through the reasonable design of the electromagnetic structure of the device, it can be realized in the X-band High Gain, High Efficiency, High Power Microwave Output of Triaxial Relativistic Klystron Amplifier

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Embodiment Construction

[0030] The accompanying drawings constituting this application are used to provide further explanations of the present invention, and the schematic embodiments and descriptions thereof of the present invention are used to explain the present invention, and do not constitute improper limitations to the present invention.

[0031] figure 1 It is a structural schematic diagram of the X-band three-axis relativistic klystron amplifier disclosed in the prior art 1 mentioned in the introduction part of the background. Although the paper publishes the simulation and experimental results of the device, it only gives the following figure 1 The structural schematic diagram shown does not fully disclose its specific technical solution. Therefore, the approximate connection relationship of the structure can only be briefly introduced based on the content disclosed in prior art 1. The structure mainly includes cathode seat 101, cathode 102, anode outer cylinder 103, left inner conductor 1...

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Abstract

An X-band high gain and high efficiency triaxial relativistic klystron amplifier comprises a cathode holder 301, a cathode 302, an anode outer cylinder 303, an inner conductor 304, a modulation cavity305, a first reflection cavity 306, a first cluster cavity 307, a second reflection cavity 308, a second cluster cavity 309, a third reflection cavity 310, an extraction cavity 311, a cone waveguide312, a feedback loop 313, an electron collector 314, a support rod 315, a microwave output port 316, a solenoid magnetic field 317, and an injection waveguide 318, wherein the overall structure is rotationally symmetric about the central axis OZ axis. The amplifier, by rationally designing the electromagnetic structure of the device, overcomes the shortages such as complex structure, and relatively low gain (about 40 dB), efficiency (less than 30%) and output microwave power (about 1 GW) of axial injection or lateral dual-port injection in the existing X-band triaxial relativistic klystron amplifier, and realizes the high-gain, high-efficiency, and high-power microwave output of the triaxial relativistic klystron amplifier in the X-band.

Description

technical field [0001] The invention relates to a microwave source device in the field of high-power microwave technology, in particular to an X-band high-gain high-efficiency triaxial relativistic klystron amplifier (Triaxial Relativistic Klystron Amplifier, TRKA). Background technique [0002] High Power Microwave (HPM) usually refers to electromagnetic waves with a peak power greater than 100 MW and a frequency between 1 and 300 GHz. The high-power microwave source is the core component of the high-power microwave system. It converts the energy of the high-current relativistic electron beam into microwave energy through the special electromagnetic structure inside the device, and then generates directional high-power microwave radiation through the transmitting antenna. [0003] Since the most prominent feature of high-power microwave sources is high output microwave power, the pursuit of high output microwave power has always been a research hotspot in the field of high-...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J23/36H01J25/10
CPCH01J23/36H01J25/10
Inventor 巨金川张威张军钟辉煌
Owner NAT UNIV OF DEFENSE TECH
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