High-linearity broadband stacking low noise amplifier based on gain compensation technology

Abstract

The invention discloses a high-linearity broadband stacking low noise amplifier based on a gain compensation technology. The high-linearity broadband stacking low noise amplifier comprises a two-stacking low noise amplification network, an interstage matching network and a two-stacking gain expansion amplification network which are connected in sequence; and a first power supply bias network and a second power supply bias network which are connected with the two-stacking low noise amplification network and the two-stacking gain expansion amplification network. According to the high-linearity broadband stacking low noise amplifier, a serial stacking structure is realized through adoption of two transistors with different sizes and ultra wide band noise and impedance matching are realized through combination of an RLC feedback network; through utilization of the gain compression compensation technology, the gain compression property of the two-stacking low noise amplification network is cancelled within a certain bias range through the two-stacking gain expansion amplification network and a linearity index of the amplifier is improved, so the whole low noise amplifier has good broadband, linearity, low power consumption and low noise amplification capability; and moreover, the low breakdown voltage property of an integrated circuit technology is avoided and the stability and reliability of a circuit are improved.

Description

technical field [0001] The invention relates to the fields of field effect transistor radio frequency low noise amplifiers and integrated circuits, in particular to a high linearity, wideband, low power consumption low noise amplifier applied to a receiving module at the front end of an ultra-wideband receiver. Background technique [0002] With the rapid development of electronic warfare, software radio, ultra-wideband communication, wireless local area network (WLAN) and other military electronic warfare and communication, and civilian communication markets, RF front-end receivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs ultra-wideband, high gain, high linearity, low power consumption, and low noise RF and microwave low noise amplifier chips. [0003] However, when designing traditional radio frequency and microwave low noise amplifier chips, there are always some design prob...

AI Technical Summary

Problems solved by technology

[0004] (1) Low power consumption, high gain, and low noise amplification indicators mutually restrict each other: driven by the market, the standby power consumption of the RF front-end receiver needs to be reduced as much as possible, so as to realize the function of energy saving, but the traditional common source (or common emitter) In the design of low-noise amplifiers, the best noise bias point to achieve optimal noise and the bias point to meet the maximum gain and transconductance often cannot achieve the lowest power consumption of the amplifier, so the two indicators are not well compatible.

[0005] (2) Low power consumption and high linearity index mutually restrict each other: in traditional common-source (or common-emitter) low-noise amplifier design, high linearity index needs to select amplifier transistors with high power capacity and high 1dB compression point under a fixed process, However, high power capacity often requires large DC power consumption, so low power consumption and linearity are not well compatible

[0007] (1) The current multiplexing structure requires the use of feed inductance and large capacitance to achieve static bias multiplexing of two common source (or common emitter) amplifiers. The self-resonant frequency of this large inductance and large capacitance feed structure is low , when realizing ultra-wideband amplification, it is possible that the self-resonant frequency point will fall into the amplification frequency band, thereby deteriorating the radio frequency characteristics; at the same time, large inductance and capacitance often occupy a large chip area, thereby increasing the chip cost;

[0008] (2) The current multiplexing structure often adopts the traditional AB bias state in order to obtain high gain and low noise figure, but it still cannot solve the inherent problem of mutual constraints between low power consumption and high linearity indicators

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