High-frequency high-power heterojunction bipolar transistor power amplifier

Abstract

The invention discloses a high-frequency high-power heterojunction bipolar transistor power amplifier. The high-frequency high-power heterojunction bipolar transistor power amplifier comprises an input distribution transformation coupling matching network, a first Darlington power amplification network, a second Darlington power amplification network, a third Darlington power amplification network, a fourth Darlington power amplification network and an output distribution transformation coupling equalization network. According to the invention, the heterojunction bipolar transistor is adopted,and the self-biased structure is utilized, so that extra base-stage feed is not needed, and complex peripheral circuits in the application of the amplifier are greatly reduced. The core framework adopts the first Darlington power amplification network, the second Darlington power amplification network, the third Darlington power amplification network and the fourth Darlington power amplificationnetwork, so that high power can be obtained, high high-frequency gain can be obtained, and meanwhile, the whole power amplifier obtains good high-frequency, high-gain, high-efficiency and high-power output capacities by utilizing good parasitic parameter inhibition of the differential amplifier in a microwave frequency band and combining with good power synthesis characteristics of a distributed transformer network.

Description

technical field [0001] The invention relates to the field of semiconductor power amplifiers and integrated circuits, in particular to a high-frequency and high-power heterojunction bipolar transistor power amplifier applied to a transmitting module at the end of a radio frequency microwave transceiver. Background technique [0002] With the rapid development of wireless communication systems and RF microwave circuits, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the radio frequency and microwave power amplifier of the transmitter to have high output power, high gain, high efficiency, low cost and other performances, and the integrated circuit is the key technology that is expected to meet the market demand. [0003] However, when using integrated circuit technology to design and implement RF and microwave power amplifier chip circuits, its performance and ...

AI Technical Summary

Problems solved by technology

[0004] (1) High power and high efficiency capabilities are limited: Traditional power amplifiers use a multi-channel parallel combination structure or a distributed structure. The combination efficiency of these two structures is limited, resulting in part of the power loss in the combination network, which limits high power. , high efficiency capability

[0005] (2) Low power consumption, high gain amplification capability is limited: the power amplifier of the traditional single-ended common source transistor is affected by the parasitic parameters of the transistor, the gain is low when working at high frequency, and the power capability is greatly limited at the same time, so as to achieve low power consumption more difficult

[0007] (1) The output impedance of the traditional multi-stage and multi-channel synthesis single-ended power amplifier is low when the multi-channel parallel combination structure is adopted, so the output synthesis net...

Images