Bulk acoustic wave resonator, method for manufacturing bulk acoustic wave resonator, bulk acoustic wave resonator unit, filter, and electronic device

A technology of bulk acoustic wave resonators and resonators, applied in the direction of electrical components, impedance networks, etc., can solve the problems of low electromechanical coupling coefficient, high defect density, and poor piezoelectric characteristics of resonators

A technology of bulk acoustic wave resonators and resonators, applied in the direction of electrical components, impedance networks, etc., can solve the problems of low electromechanical coupling coefficient, high defect density, and poor piezoelectric characteristics of resonators

CN111245397APending Publication Date: 2020-06-05TIANJIN UNIV +1

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  • Bulk acoustic wave resonator, method for manufacturing bulk acoustic wave resonator, bulk acoustic wave resonator unit, filter, and electronic device
  • Bulk acoustic wave resonator, method for manufacturing bulk acoustic wave resonator, bulk acoustic wave resonator unit, filter, and electronic device
  • Bulk acoustic wave resonator, method for manufacturing bulk acoustic wave resonator, bulk acoustic wave resonator unit, filter, and electronic device

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Embodiment Construction

[0032] The technical solutions of the present invention will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals designate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, but should not be construed as a limitation of the present invention. Some, but not all, embodiments of the invention. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments of the present invention belong to the protection scope of the present invention.

[0033] Figure 1B is a top view of a single crystal piezoelectric thin film bulk acoustic resonator according to an exemplary embodiment of the present invention. Among them, 16 is the air gap or cavity of the single ...

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Abstract

The present invention relates to a single crystal thin film bulk acoustic resonator, comprising: a substrate; an acoustic mirror; a bottom electrode, connected with the bottom electrode pin; a top electrode, connected with the top electrode pin; a piezoelectric layer, arranged between the bottom electrode and the top electrode, wherein the piezoelectric layer is a single crystal film piezoelectriclayer, and an overlapping region of the acoustic mirror, the bottom electrode, the top electrode and the single crystal film piezoelectric layer in the thickness direction of the resonator forms an effective region of the resonator. The projections of the non-pin end of the top electrode and the non-pin end of the bottom electrode in the thickness direction of the resonator can be spaced apart from the edge of the acoustic mirror. The invention further relates to a manufacturing method of the single-crystal film bulk acoustic resonator, a single-crystal film bulk acoustic resonator unit withthe single-crystal film resonator and an electronic device.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator, a filter with the resonator, a bulk acoustic wave resonator unit, and an electronic device with the resonator or the filter . Background technique [0002] With the increasing development of 5G communication technology, the requirements for communication frequency bands are getting higher and higher. Due to the limitation of structure and performance, traditional radio frequency filters cannot meet the requirements of high frequency communication. Film Bulk Acoustic Resonator (FBAR), as a new type of MEMS device, is well adapted to the upgrading of wireless communication systems, making FBAR technology one of the research hotspots in the field of communication. Compared with traditional bulk acoustic resonators, FBAR thin film bulk acoustic resonators, which have the advantages of small size, light weight, low insertion los...

Claims

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Application Information

Patent Timeline
05 Jun 2020
Publication
CN111245397A
IPC
H03H9/17; H03H9/02; H03H3/02; H03H9/54
CPC
H03H9/171; H03H9/02007; H03H3/02; H03H9/54; H03H2003/023; H03H9/02118; H03H9/173; H03H9/0523
Inventors
张孟伦; 庞慰