Bulk acoustic wave resonator having void layer on electrode, method of manufacturing same, filter, and electronic apparatus

Abstract

The invention relates to a bulk acoustic wave resonator and a manufacturing method thereof. The resonator includes: a substrate; a bottom electrode; a top electrode; and a piezoelectric layer, the electrode is arranged between the bottom electrode and the top electrode; wherein the bottom electrode is a gap electrode, the gap electrode is provided with a gap layer, distances exist between the gaplayer and the top surface and the bottom surface of the gap electrode in the thickness direction of the gap electrode, the gap layer forms an acoustic mirror cavity of the resonator, or an acoustic mirror structure is arranged in the gap layer; the substrate is provided with at least one electric connection through hole, one end of the through hole is connected to the bottom electrode, and the other end of the through hole is suitable for being connected to a bonding pad located on the lower side of the substrate. The invention further relates to a filter with the resonator and electronic apparatus with the filter or the resonator.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator and a method for manufacturing the same, a filter having the resonator, and an electronic device having the resonator or the filter. Background technique [0002] As the basic elements of electronic equipment, electronic devices have been widely used, and their applications include mobile phones, automobiles, home appliances and so on. In addition, technologies such as artificial intelligence, the Internet of Things, and 5G communications that will change the world in the future still need to rely on electronic devices as their foundation. [0003] Electronic devices can play different characteristics and advantages according to different working principles. Among all electronic devices, devices that use the piezoelectric effect (or inverse piezoelectric effect) are one of the most important categories. Piezoelectric devices ...

AI Technical Summary

Problems solved by technology

For bulk acoustic wave resonators and filters, high operating frequency means that the film thickness, especially that of the electrode, needs to be further reduced; however, the main negative effect brought about by the reduction of the electrode film thickness is the resonator Q due to the increase in electrical loss. value decreases, especially the Q value at the series resonance point and its frequency vicinity; correspondingly, the performance of high operating frequency bulk acoustic wave filter is also greatly deteriorated with the decrease of the Q value of the bulk acoustic wave resonator

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