Bulk acoustic wave resonator with variable doping concentration, filter and electronic equipment

Abstract

The present invention relates to a bulk acoustic wave resonator, and the resonator comprises a substrate; an acoustic mirror; a bottom electrode disposed over the substrate; a top electrode facing thebottom electrode and having an electrode connection portion; and a piezoelectric layer which is arranged above the bottom electrode and between the bottom electrode and the top electrode, wherein thepiezoelectric layer comprises at least three piezoelectron layers, and the types of doped substances and/or the concentrations of the doped substances of the at least three piezoelectron layers havealternate changes and/or periodic changes in the thickness direction of the piezoelectric layer. The invention also relates to a filter having the bulk acoustic wave resonator, an electronic device having the filter, and a manufacturing method of the bulk acoustic wave resonator.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator, a filter with the resonator, an electronic device with the filter, and a method for manufacturing the bulk acoustic wave resonator. Background technique [0002] With the rapid development of wireless communication technology, there is an increasing demand for multi-passband transceivers that can simultaneously process large amounts of data. In recent years, multi-passband transceivers have been widely used in positioning systems and multi-standard systems. These systems need to process signals of different frequency bands simultaneously to improve the overall performance of the system. Although the number of frequency bands in a single chip continues to increase, consumers are increasingly demanding miniaturized, multi-functional portable devices, and miniaturization has become the development trend of chips, which puts high...

AI Technical Summary

Problems solved by technology

[0009] However, in practical applications, there is still a need to further increase the parallel resonance impedance Rp of the resonator to increase the Q value of the resonator

[0010] In addition, in figure 1 In the technical scheme of layered doping of the piezoelectric layer shown, because of different doping concentrations, the sublayers of the upper and lower piezoelectric layers are stressed due to the difference in stress on the adjacent interface, so that two sublayers are prone to appear. The situation of not being tightly combined with each other further affects the performance of the resonator

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