Bulk acoustic wave resonator with doped isolation structure

A technology of bulk acoustic wave resonators and isolation structures, which is applied to electrical components, impedance networks, etc., can solve problems such as bulk acoustic wave resonator drop, resonator performance degradation, and sound wave leakage, so as to eliminate sound wave energy, improve utilization efficiency and work performance effect

Active Publication Date: 2019-06-14
TIANJIN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] have as figure 2 When the bulk acoustic wave resonator with the structure shown is working, part of the sound waves will always leak from the effective area AR200 to outside the effective area, which will cause the quality factor (Q value) of the bulk acoustic wave resonator to decrease, thereby deteriorating the performance of the resonator

Method used

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  • Bulk acoustic wave resonator with doped isolation structure
  • Bulk acoustic wave resonator with doped isolation structure
  • Bulk acoustic wave resonator with doped isolation structure

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Embodiment Construction

[0026] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0027] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation or position indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the descrip...

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Abstract

The invention provides a bulk acoustic wave resonator with a doped isolation structure. The bulk acoustic wave resonator includes a substrate, an acoustic mirror embedded in substrate, a lower electrode positioned on the substrate and the acoustic mirror; a piezoelectric layer positioned on the lower electrode; and an upper electrode on the piezoelectric layer, an upper electrode and a piezoelectric layer. The lower electrode and the acoustic mirror form an effective region at the overlapped part in the thickness direction of the resonator, the peripheral region of the piezoelectric layer is provided with a doped isolation structure, the doped isolation structure is provided with a multi-layer structure in the transverse direction, each layer is provided with uniform element doping concentration, and the doping concentrations or doping elements in two adjacent layers are different from each other.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a bulk acoustic wave resonator with a doped isolation structure. Background technique [0002] The traditional bulk acoustic wave resonator top view structure is as follows figure 1 As shown, cutting along the straight line AA' can be obtained as figure 2 The cross-sectional structure shown. Such as figure 2 As shown, the traditional bulk acoustic wave resonator includes the substrate SUB200 (corresponding to figure 1 SUB100 in ), the acoustic mirror structure AM200 embedded or located on the substrate (corresponding to figure 1 AM100 in ), the lower electrode BE200 located above the acoustic mirror and substrate (corresponding to the corresponding figure 1 In BE100), the piezoelectric film layer PZ200 (corresponding to the corresponding figure 1 PZ100 in), the upper electrode TE200 located on the piezoelectric thin film layer. also, figure 2 Structures not show...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/05
Inventor 杨清瑞庞慰张孟伦
Owner TIANJIN UNIV
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