31results about How to "Improved piezoelectric response" patented technology

The invention relates to a piezoelectric ceramic material with high voltage electric response and a high Curie temperature and a preparation method thereof. A stoichiometric ratio accords with a chemical general formula (1-x)(K0.48Na0.52)(Nb1-ySby)O3-xBi0.5(Na0.8K0.2)0.5ZrO3; wherein x is more than or equal to 0.02 and less than or equal to 0.04, and y is more than or equal to 0.02 and less than or equal to 0.04. The preparation method comprises the following steps of: (1), preparing a base material according to the stoichiometric ratio and a sodium niobate (NaNbO3) sheet template for texturegrowth of crystal grains; (2), weighing the base material, the template and a MnO2 sintering aid according to the stoichiometric ratio, placing the weighed base material, template and MnO2 sintering aid in a nylon tank, adding a solvent, a dispersant and a binder, and uniformly stirring the mixture to obtain casting slurry with good fluidity; (3) casting the slurry to obtain a strip-shaped thick film, cutting the thick film after the thick film is dried, laminating and hot pressing the thick film into a ceramic blank body; (4) removing the blank body from the adhesive, and sintering the blankbody by using a two-step sintering process to obtain lead-free textured piezoelectric ceramic, wherein the lead-free textured piezoelectric ceramic has high piezoelectric performance and a high Curietemperature. The environment-friendly lead-free piezoelectric ceramic material has higher practical value in the fields of low and medium temperature sensors, transducers, drivers and the like.

A composite article has 1) a dry piezoelectric layer comprising a piezoelectric material, 2) a dry dielectric layer arranged contiguously with at least one of the opposing surfaces of the dry piezoelectric layer, and 3) a pair of non-electrically-connected co-planar patterned electrodes. The dry dielectric layer has essentially (a′) a dielectric material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a′) dielectric material by at least 10%.

A sensing system responsive to a wavefield of acoustic or seismic signals. In one embodiment, the system includes a frame having a surface of tubular shape about which a layer of piezoelectric material can be positioned to extend along a first direction. A piezoelectric element is positioned under tension to apply a force against the frame, which tension increases signal response of the element.

A piezoelectric device can be provided by: A) providing a first dry piezoelectric layer (first dry PL) comprising a dielectric material and having first and second opposing surfaces; and B) providing a first dry electrically-conductive layer (first dry ECL-P) that is arranged contiguously with the first opposing surface of the first dry PL. The first dry ECL-P has (a) an electrically-conductive material; and (b) particles distributed within the (a) electrically-conductive material, the (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%, and which (b) particles have a d50 of at least 500 nm and up to and including 500 μm and a polydispersity coefficient that is less than 3. The weight ratio of the (b) particles to the (a) electrically-conductive material is at least 0.01:1 and up to and including 10:1.

The invention relates to the technical field of thin film material preparation, in particular to a C-axis vertical preferred orientation AlN piezoelectric thin film and a preparation method thereof, and the preparation method comprises the step: a self-buffer layer AlN thin film, a metal electrode layer and an AlN piezoelectric thin film are sequentially prepared on a sapphire or YAG crystal. Andthe self-buffer layer AlN film induces the orientation of the metal electrode layer, so that the highly C-axis preferred orientation AlN film is prepared on the electrode layer. The sapphire or YAG crystal and the high-purity sputtering target form an angle of 45 degrees, so that the energy of migration motion parallel to the surface of the substrate after sputtering atomic groups reach the substrate is effectively regulated and controlled, the growth of a buffer layer and the C-axis preferred orientation growth of the AlN piezoelectric film are facilitated, and the piezoelectric response andelectromechanical coupling coefficient of the film are improved. According to the method disclosed by the invention, the C-axis preferred orientation AlN film can be grown by utilizing a magnetron sputtering technology at a relatively low temperature, and the obtained AlN film is high in crystallinity and has a relatively high piezoelectric response coefficient and a relatively high electromechanical coupling coefficient.

A kinetic piezoelectric device is designed with: A) piezoelectric capacitor that has: 1) a substrate; 2) a first dry piezoelectric layer (first dry PL) comprising a piezoelectric material and having first and second opposing surfaces; and 3) a first pair of non-electrically-connected co-planar patterned electrodes that are arranged contiguously with at least one of the first and second opposing surfaces of the first dry PL. At least one of the first pair of non-electrically-connected co-planar patterned electrodes consists essentially of: (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%. The device also has B) signal processing electronics in electrical communication with the piezoelectric capacitor; and C) a means for transmitting all or a portion of an applied force directly to the first dry PL.

The invention relates to the technical field of piezoelectric catalytic hydrogen production materials, and provides a tin and cerium-strontium titanate solid solution piezoelectric hydrogen production catalyst as well as a preparation method and application thereof. The chemical general formula of the material prepared according to the invention is SnxCeySr(1-x-y)TiO3 (x is more than 0 and less than or equal to 0.15, and y is more than 0 and less than or equal to 0.15). A Sr source, a Ce source, a Sn source and a Ti source are mixed with water and ethylene glycol, a coprecipitation method is adopted, a precursor of the tin and cerium-strontium titanate solid solution piezoelectric hydrogen production catalyst is prepared, and finally the solid solution piezoelectric hydrogen production catalyst is formed through high-temperature calcination. The result of the embodiment shows that the piezoelectric hydrogen production performance of SrTiO3 is greatly improved due to the introduction of Sn and Ce. Moreover, when x is equal to 0.1 and y is equal to 0.1, the hydrogen production efficiency is the best, reaches 411 [mu]mol/g and is far higher than 53.45 [mu]mol/g of SrTiO3.

An inertial piezoelectric device has: A) piezoelectric capacitor having: 1) a substrate; 2) a dry piezoelectric layer; and 3) a first pair of non-electrically-connected co-planar patterned electrodes that are arranged contiguously with an opposing surface of the first dry PL. The non-electrically-connected co-planar patterned electrodes consist essentially of: (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%. The device also has B) signal processing electronics in electrical communication with the piezoelectric capacitor; C) a means for converting all or a portion of an applied force to an inertial force that is transmitted to the first dry PL; and optionally D) a proof mass that is contiguous with at least one external surface of the piezoelectric capacitor.

The invention discloses a flexible piezoelectric polymer micromechanical energy collector and a preparation method thereof. In the invention, the parallel multi-layer piezoelectric films are wound on the side wall of the polymer elastic body along the length direction, and the parallel electrodes are led out by wires; Due to the curvature of the upper and lower surfaces, the force along the axial direction is amplified and transformed into a stress along the radial direction through the flexural tension mechanism, which is applied to the multilayer piezoelectric film to increase the stress applied to the piezoelectric film; The film converts the stress into electrical energy through the piezoelectric effect; the invention adopts the parallel structure of the multilayer piezoelectric film, so that the capacitance is increased, the internal impedance is reduced, and the effective piezoelectric response is enhanced, thereby increasing the output current and Power density; the invention has a good application prospect in the field of micro-energy.

A piezoelectric capacitor includes A) a composite article that has 1) a dry piezoelectric layer (dry PL); 2) a first dry electrode comprising a dry electrically-conductive layer arranged contiguously with a first opposing surface of the dry PL; and 3) a second dry electrode arranged contiguously with a second opposing surface of the dry PL. The dry electrically-conductive layer has essentially (a) an electrically-conductive material; and (b) particles having a Young's modulus that is different from the Young's modulus of the (a) electrically-conductive material by at least 10%. The capacitor also has B) electrical communication means attached to both electrodes for electrical communication of the composite article with an external electrical circuit.