Failure analysis method for gate oxide defect original appearance

Abstract

The invention relates to the technical field of semiconductor defect analysis, in particular to a failure analysis method for a gate oxide defect original appearance. The method includes the steps that firstly, a semiconductor structure to be tested is screened out under the preset voltage condition, wherein the semiconductor structure to be tested has a gate oxide defect; secondly, the semiconductor structure to be tested is operated, the semiconductor structure has the gate oxide defect, a metal interconnection layer is ground off, a scanning electron microscope voltage comparison method is used for determining the position of the gate oxide defect, an interconnection line, a dielectric layer and a gate are removed in sequence, a contrast layer having the high contrast ratio with the transmission electron microscope contrast ratio of the gate oxide is deposited on the rest of the gate oxide, a transmission electron microscope sample is manufactured on a defective gate area, and finally analysis is conducted through a transmission electron microscope. According to the failure analysis method for the gate oxide defect original appearance, the gate oxide defect original appearance can be clearly observed, and a forceful basis and a forceful direction can be provided for finding the processing technology defect of the gate oxide.

Description

technical field [0001] The invention relates to the technical field of semiconductor defect analysis, in particular to a failure analysis method for the original defect appearance of a gate oxide layer. Background technique [0002] The gate oxide breakdown voltage test (GOI / ONO Vramp) is a common method for evaluating the gate oxide process. The samples after the gate oxide breakdown voltage test usually have breakdown of the gate oxide layer, even if there is no breakdown , Breakdown will also occur during the subsequent failure analysis and location (grasp the hot spot) (only after the breakdown, the subsequent physical property analysis can observe the failure point, the resolution of the machine is limited, such as the resolution of the scanning electron microscope is more than a few tenths of a nanometer) . Therefore, the failure analysis of the existing breakdown voltage test of the gate oxide layer is basically the analysis of the condition after the breakdown of th...

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Problems solved by technology

[0008] The above two patents do not record the technical features related to the failure analysis of the original appearance of gate oxide layer defects in the present invention

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