The invention discloses a method for preparing
strained silicon by a scanning-type high-energy
microbeam X-
ray, and relates to the field of the
integrated circuit manufacture. The method comprises thefollowing steps: synthesizing a Si / SiO2 double-layer
composite structure system, wherein the structure thereof is a
silicon film of which the upper surface is covered by a
silicon dioxide layer, successively illuminating areas expected to produce strain in the Si / SiO2 double-layer
composite structure system by using the high-energy
microbeam X-
ray according to a certain sequence, to prepare the
strained silicon of the local strain. The method is capable of firstly using a high-energy
microbeam X-
ray method, using a feature that the area of a beam spot of the microbeam X-ray is tiny, thereby achieving the purposes of accurately selecting and controlling the strain areas of the
strained silicon, and producing the size-controllable strain capacity in the different strain areas. The method has the advantages of controllable strain areas and size precision, low
working temperature, no introduced impurities, simple process,
large strain capacity range, no damage to
silicon and the like, andis expected to be extensively applied in the fields, such as
semiconductor integrated circuits and micro-nano electronic devices.