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Non-contact type optical measurement method for thickness of thick photoresist film

A non-contact, thick photoresist technology, applied in measurement devices, optical devices, instruments, etc., can solve the problem of insufficiency of measurement methods, and achieve the effect of improving production accuracy and success rate and wide application range.

Active Publication Date: 2018-11-13
DALIAN UNIV OF TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] In summary, the existing measurement methods cannot meet the measurement requirements of accurately measuring the thickness of the film before exposure in the process of making a large-thickness photoresist film

Method used

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  • Non-contact type optical measurement method for thickness of thick photoresist film
  • Non-contact type optical measurement method for thickness of thick photoresist film
  • Non-contact type optical measurement method for thickness of thick photoresist film

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Embodiment Construction

[0022] The specific embodiments of the present invention will be described in detail below in conjunction with the technical solutions and accompanying drawings.

[0023] attached figure 1 It is a schematic diagram of the measurement principle of thick film thickness based on the refractive index. Combining the law of refraction of light and the relationship of trigonometric functions, it can be known that the actual thickness of SU-8 glue is the product of the visual thickness and its refractive index, that is, formula (1). based on figure 1 The measurement principle, using figure 2 The refractive index of SU-8 2075 photoresist was calculated. An experimental method for measuring the thickness of a thick photoresist, which comprises the following steps:

[0024] (1) Substrate pretreatment

[0025] Use different types of sandpaper to rough, finely grind, and polish the metal copper substrate to make the surface roughness Ra less than 0.04 μm; use acetone cotton ball to s...

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Abstract

The invention belongs to the technical field of micro-manufacturing and provides a non-contact type optical measurement method for thickness of a thick photoresist film. According to the method, refractive index of the photoresist film is introduced when the photoresist thickness is measured by an optical microscope, a virtual image observed by naked eyes is converted into a real image, and the accurate photoresist film thickness is obtained. The method comprises measurement steps as follows: substrate pretreatment, photoresist film preparation, photoresist film thickness measurement, exposureand development. The defects of measurement methods such as an electrolytic method, a crystal resonator method, an interference method, a spectrum scanning method, an X-ray method, an elliptical polarization method and the like in the prior art as well as limitation of application are overcome, the thickness of the photoresist film which is several hundreds mu m thick is measured accurately, themethod has the characteristics of being wide in application range, simple and efficient, and dimensional precision and efficiency of manufacturing of an electric casting film with a metal microstructure can be improved.

Description

technical field [0001] The invention belongs to the technical field of micro-manufacturing, and relates to a method for measuring the thickness of a photoresist film in a photolithography process, in particular to an optical measurement method for measuring the thickness of a thick photoresist film after leveling the glue and before exposing and developing. Background technique [0002] In the process of making metal micro-devices by micro-electroforming technology based on photoresist mold, the thickness of photoresist film determines the height of electroformed metal microstructure. In the process of making photoresist molds, for large thickness photoresist films with a thickness of several hundred microns, inappropriate photolithography process parameters often lead to insufficient pre-baking, exposure or post-baking time of the film, and insufficient photochemical reactions. 1. A qualified micro-electroforming film cavity cannot be obtained during development, which even...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/06
CPCG01B11/06
Inventor 杜立群宋畅李晓军朱和卿赵雯
Owner DALIAN UNIV OF TECH
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