Method for preparing strained silicon by scanning-type high-energy microbeam X-ray

Abstract

The invention discloses a method for preparing strained silicon by a scanning-type high-energy microbeam X-ray, and relates to the field of the integrated circuit manufacture. The method comprises thefollowing steps: synthesizing a Si / SiO2 double-layer composite structure system, wherein the structure thereof is a silicon film of which the upper surface is covered by a silicon dioxide layer, successively illuminating areas expected to produce strain in the Si / SiO2 double-layer composite structure system by using the high-energy microbeam X-ray according to a certain sequence, to prepare the strained silicon of the local strain. The method is capable of firstly using a high-energy microbeam X-ray method, using a feature that the area of a beam spot of the microbeam X-ray is tiny, thereby achieving the purposes of accurately selecting and controlling the strain areas of the strained silicon, and producing the size-controllable strain capacity in the different strain areas. The method has the advantages of controllable strain areas and size precision, low working temperature, no introduced impurities, simple process, large strain capacity range, no damage to silicon and the like, andis expected to be extensively applied in the fields, such as semiconductor integrated circuits and micro-nano electronic devices.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for preparing strained silicon by scanning high-energy micro-beam X-rays. Background technique [0002] Silicon is an extremely important raw material for the semiconductor manufacturing industry today. With the continuous development and improvement of chip manufacturing technology, the emergence of strained silicon technology has become an effective means to further improve the running speed of chips. When the silicon lattice is strained by stress, the effective mass of the transport carrier can be reduced, and the mobility and saturation velocity can be increased. Therefore, under the same device size, if the strained silicon technology is used as the carrier transport channel, the goal of increasing the device speed and driving current can be achieved due to the increased carrier mobility of electrons and holes. [0003] At present, there are two main...

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Problems solved by technology

[0005] In addition, an important research direction today is to integrate multiple strain technologies to further improve device performance, which greatly increases the difficulty of pretreatment and processing links in the manufacturing process and the integration process of integrated circuit processes, and increases the impact of strain process modules on the circuit yield. and reliability impact

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