40results about How to "Simple integration process" patented technology

The invention discloses an MEMS (Micro Electro Mechanical System) film capacitive type multi-parameter sensor structure and an integrated manufacturing method thereof. An MEMS carrying substrate is provided with MEMS film capacitive type pressure, temperature and humidity sensors which are arranged side by side. Electrodes, sacrificial layers, sensitive layers, sensitive films and protective layers of the three sensors adopt mutually matching structures and materials and therefore can be manufactured through an integrated surface micro-processing technology. The multi-parameter sensor structure and the integrated manufacturing method provided by the invention have the advantages of reducing volume of components, simplifying technical steps and being capable of decreasing cost of sensor products to a certain extent. In addition, the wholly capacitive structure adds application potential of the MEMS film capacitive type multi-parameter sensor structure in an inductive coupling based passive wireless sensing system.

The invention discloses a GLONASS satellite orbit calculating method and a system thereof. The method comprises the following steps of capturing a GLONASS satellite broadcast signal, converting into GLONASS satellite data and transmitting to a time determination module; determining whether satellite reference time tb in the GLONASS satellite data is different from current reference time tb of a positioning system, if the satellite reference time tb in the GLONASS satellite data is different from the current reference time tb of the positioning system, updating the reference time tb and satellite positioning data; otherwise, keeping using the reference time tb and the satellite positioning data; transmitting the GLONASS satellite data to a GLONASS step integration orbit calculation module and finally calculating a GLONASS satellite position and a speed; comparing satellite reference time to current satellite time, if the current time is greater than the satellite reference time and a difference is in one sampling epoch interval, recalibrating the GLONASS satellite position and the speed, otherwise, selecting a GLONASS high-efficiency orbit calculation module and finally calculating the GLONASS satellite position and the speed.

The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.

The invention provides a CMOS device and a fabrication method thereof. The method comprises steps: a semiconductor substrate is provided; a first blocking layer is formed on the surface of the semiconductor substrate; hydrogen or oxygen plasma passivation processing is carried out on the first blocking layer on a second N channel area and a second P channel area; a first work function layer is formed on the first blocking layer on a first P channel area and the second P channel area; a second work function layer is formed on the first blocking layer on a first N channel area and the second N channel area and the first work function layer; and/or hydrogen or oxygen plasma passivation processing is carried out on the first blocking layer on the second N channel area and the first work function layer on the second P channel area. The method is high in threshold adjustment control precision, the process flexibility is high, and the method is simple and easy to operate and is more suitable for multi-threshold regulation on a small-size device.

The invention relates to a non-volatile ferroelectric random access memory and a preparation process thereof. Since the surface formed by through hole filling is not flat, the structure of the layer and the spatial design of a substrate layer are combined and a ferroelectric capacitor is integrated on metal far away from the through hole. On the one hand, the performance damage of the ferroelectric capacitor because of the unevenness near the surface of the through hole is avoided; and on the other hand, the high-density memory unit design is realized. The ferroelectric random access memory prepared by the process has advantages of high storage density, high compatibility with a CMOS process line and simple process flow; and no planarization process is needed before ferroelectric capacitorintegration.

The invention relates to the technical field of microelectronic heat dissipation, and discloses a double-sided efficient heat dissipation airtight packaging structure and a preparation method thereof. The packaging structure comprises a heat dissipation micro-channel, a packaging substrate, a first chip, a second chip, an enclosure frame, cover plates, a liquid cooling connector and an electric connector; the heat dissipation micro-channel and the enclosure frame are welded on the packaging substrate; the first chip is welded on the heat dissipation micro-channel, the second chip is welded on the packaging substrate, and the first chip and the second chip are interconnected with the packaging substrate; the cover plates are respectively welded on the enclosure frame and the packaging substrate; and the liquid cooling connector and the electric connector are welded at the bottom of the packaging substrate. According to the invention, efficient heat dissipation of the high-power chip and effective heat dissipation of the medium-and-small-power chip can be realized, so that heat in the packaging structure is uniformly distributed.

The invention provides a honeycomb ceramic for adsorbing and inactivating viruses. The honeycomb ceramic is composed of a honeycomb ceramic matrix and a coating, the coating is composed of porous particles for adsorbing and inactivating viruses and a binder roasted product, each porous particle is composed of a shell and a core, and each shell is composed of oxygen storage materials SiO2-CeO2; and each core is a hierarchical pore molecular sieve. The honeycomb ceramic disclosed by the invention can be used for adsorbing and inactivating viruses, and further can be used as a filtering assembly to be used in the field of manufacturing of high-flow-speed air purification equipment such as air purifiers, air conditioners and fresh air systems.

The invention provides a display pronunciation integrated device and a manufacturing method thereof, relates to the technical field of display and pronunciation integration, and aims at solving the problems that in the prior art, when a display device and a pronunciation device are integrated, the integration process is complex, and the pronunciation mode, quality and the like are limited. The manufacturing method comprises the steps: manufacturing the display pronunciation integrated device, manufacturing a driving back plate, forming a plurality of light-emitting elements on the driving backplate, distributing the plurality of light-emitting elements on the driving back plate in an array manner, forming gaps between the adjacent light-emitting elements, electrically connecting the plurality of light-emitting elements with the pixel driving circuits in a one-to-one correspondence manner, and enabling the light-emitting elements to emit light under the driving of the corresponding pixel driving circuits; and transferring a plurality of pronunciation devices into the gaps, so that the plurality of pronunciation devices are electrically connected with the pronunciation driving circuits in a one-to-one correspondence manner, and the pronunciation devices are used for pronunciating under the driving of the corresponding pronunciation driving circuits. The manufacturing method provided by the invention is used for manufacturing the display pronunciation integrated device.

The invention discloses a touch substrate, a preparation method thereof, a touch module, a touch display screen and electronic equipment. The touch substrate comprises: a substrate, wherein a first touch pattern layer and a first lead group electrically connected with the first touch pattern layer are arranged on a first surface of the substrate; and an antenna coil which is arranged on the firstsurface, wherein the antenna coil comprises a coil part and a contact part, the coil part is arranged around the first touch pattern, the contact part comprises a first contact arranged in the coil part and a second contact arranged outside the coil part, and the first contact and the second contact are used for being electrically connected to an external chip; the substrate is further provided with a first through hole penetrating through the substrate, an electric conductor is arranged in the first through hole, the end, close to the first surface, of the electric conductor is electrically connected with the first contact, and the other end of the electric conductor extends to the second surface opposite to the first surface and forms a third contact on the second surface. According to the touch substrate, the integration process of the NFC antenna is simplified, and the risk that a traditional NFC antenna is artificially damaged is eliminated.