Non-volatile ferroelectric random access memory and preparation process thereof
A random access memory, non-volatile technology, applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problems of uneven thermal budget of ferroelectric capacitors, reduce the uniformity and stability of film performance, and complicated processes, etc., to achieve The effect of high storage density, low manufacturing cost, and simple process
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[0045] The present invention provides a non-volatile ferroelectric random access memory and a preparation process.
[0046] Reference figure 2 , Complete the source region (2), drain region (3), gate dielectric layer (4), through hole (5), necessary metal electrode (6) and metal wiring (7) of the transistor.
[0047] Among them, the p-type silicon substrate is the substrate, the source / drain region is n-type silicon, and the gate dielectric layer is HfO 2 The insulating film has a thickness of 5nm. The design of the transistor is compatible with the current 0.13μm process node, and three-layer metal wiring is completed. The metal used is Cu.
[0048] At present, the process of 0.13μm node can also adopt the through-hole design of the double-layer inlay structure.
[0049] The main reference for the integration process of the hafnium oxide-based ferroelectric capacitor provided by the present invention Figure 3-5 . It includes a bottom electrode (8), a hafnium oxi...
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