Silicon-based double-sided vertical cavity surface emitting laser and preparation method thereof

A vertical cavity surface emission, laser technology, applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve the problems of thermal expansion coefficient, lattice matching, etc., and achieve the effect of improving stability, good lattice matching, and reducing stress

Pending Publication Date: 2021-12-07
深圳市中科光芯半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, integrating short-wavelength and long-wavelength VCSELs on the same material substrate still needs to overcome many technical problems, such as thermal expansion coefficient, lattice matching, etc.

Method used

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  • Silicon-based double-sided vertical cavity surface emitting laser and preparation method thereof
  • Silicon-based double-sided vertical cavity surface emitting laser and preparation method thereof

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Embodiment Construction

[0053] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.

[0054] It should be noted that like numerals and let...

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Abstract

The invention provides a silicon-based double-sided vertical cavity surface emitting laser and a preparation method thereof. The silicon-based double-sided vertical cavity surface emitting laser comprises the following structures: a p-type monocrystalline silicon substrate subjected to double-sided polishing; a first p-type buffer layer on a surface in contact with the polished upper surface; a second p-type buffer layer on a surface in contact with the polished lower surface, wherein the material of the first p-type buffer layer is different from the material of the second p-type buffer layer; a short-wave laser emission module, wherein a quantum dot structure of the short-wave laser emission module is a non-doped GaNP / InP / GaNP; wherein the quantum dot structure of the long-wave laser emission module is non-doped GaNAs / InAs / GaNAs. According to the silicon-based double-sided vertical cavity surface emitting laser, a short wave and long wave coexisting VCSEL device can be prepared based on the monocrystalline silicon substrate, and the silicon-based double-sided vertical cavity surface emitting laser can be conveniently applied to communication systems, sensing systems, intelligent control systems and the like which are high in function integration level.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a silicon-based double-sided vertical cavity surface-emitting laser and a preparation method thereof. Background technique [0002] Semiconductor vertical cavity surface emitting lasers (VCSEL) can achieve different lasing wavelengths by using active region materials with different characteristic wavelengths. Short-wavelength VCSELs with lasing wavelengths in the range of 800-980nm can be used in data centers, 3D sensing, and medical sensing, while long-wavelength VCSELs with lasing wavelengths in the range of 1300-1550nm can be used in long-distance optical communications, vehicle-mounted Radar, industrial long-distance detection and other fields. With the increasing integration of communication, sensing, intelligent control and other systems, the same system often needs two VCSELs with different wavelengths at the same time to suit different application scenarios....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/02H01S5/10H01S5/183H01S5/34H01S5/343
CPCH01S5/1092H01S5/183H01S5/021H01S5/3412H01S5/343
Inventor 杨翠柏
Owner 深圳市中科光芯半导体科技有限公司
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