Double-sided efficient heat dissipation airtight packaging structure and preparation method thereof

Abstract

The invention relates to the technical field of microelectronic heat dissipation, and discloses a double-sided efficient heat dissipation airtight packaging structure and a preparation method thereof. The packaging structure comprises a heat dissipation micro-channel, a packaging substrate, a first chip, a second chip, an enclosure frame, cover plates, a liquid cooling connector and an electric connector; the heat dissipation micro-channel and the enclosure frame are welded on the packaging substrate; the first chip is welded on the heat dissipation micro-channel, the second chip is welded on the packaging substrate, and the first chip and the second chip are interconnected with the packaging substrate; the cover plates are respectively welded on the enclosure frame and the packaging substrate; and the liquid cooling connector and the electric connector are welded at the bottom of the packaging substrate. According to the invention, efficient heat dissipation of the high-power chip and effective heat dissipation of the medium-and-small-power chip can be realized, so that heat in the packaging structure is uniformly distributed.

Description

technical field [0001] The invention relates to the technical field of microelectronic heat dissipation, in particular to a double-sided high-efficiency heat dissipation airtight packaging structure and a preparation method thereof. Background technique [0002] In order to meet the high-density, high-performance, and high-reliability application requirements of electronic equipment, the packaging structure of microwave components continues to develop in the direction of miniaturization, high integration, and high airtightness. The traditional planar integration method can no longer meet the requirements. It is necessary to integrate the components on both sides of the package substrate, and achieve double the integration density under the same area. In addition, due to the gradual maturity of GaN microwave power technology, the power density of power chips has gradually increased, and its heat flux has also increased. Ordinary passive heat dissipation technology can no lon...

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Problems solved by technology

Ordinary passive heat dissipation technology can no longer meet the heat dissipation requirements of microwave components, and more efficient microfluidic enhanced heat dissipation technology is required

[0003] There are many existing patents on high-efficiency heat dissipation structures and double-sided packaging structures: for example, Chinese patent ZL201810601226.5 proposes a packaging method for heat dissipation of high-power GaN devices based on silicon-based microfluidic channels and multi-cavity groove structures, realizing microwave-oriented High-density integration of applications; however, this patent is based on silicon substrate integration, which is technically difficult and costly for small and medium batch proces

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