8 results about "Polaron" patented technology

Disclosed herein are Tamm polariton emitters and methods of making and use thereof. The Tamm polariton emitters disclosed herein comprise: a distributed Bragg reflector; and a layer comprising a conductive and / or polaritonic material; wherein the distributed Bragg reflector is disposed on the layer of the conductive and / or polaritonic material. The Tamm polariton emitters can further include a layer of a polar material. Also disclosed herein are non-dispersive infrared sensors comprising: any of the Tamm polariton emitters disclosed herein, wherein the Tamm polariton emitter is configured to selectively emit radiation at a frequency corresponding to a rotational or vibrational resonance frequency of an analyte of interest; and a detector configured to receive an electromagnetic signal from the Tamm polariton emitter and / or the analyte of interest. Also disclosed herein are methods for designing Tamm polariton emitters. The methods can, for example, comprise an inverse design protocol and / or machine learning.

At least one embodiment of the invention provides a material of a light-emitting layer, the material of the light-emitting layer comprises a carrier transport material, an energy transfer material and a light-emitting material, the light-emitting material comprises a platinum complex, the energy transfer material comprises a rare earth complex, and a trace amount of the rare earth complex is added into the material of the light-emitting layer, so that the light-emitting layer is formed. The rare earth complex molecules can store redundant carriers, and the redundant carriers can be transferred to the molecules of the luminescent material through intermolecular jump under the action of a continuously increasing external electric field, so that the carriers around the molecules of the luminescent material can be balanced; therefore, aggravation of triplet state-triplet state annihilation (TTA) and triplet state-polaron quenching (TPQ) processes can be reduced, and internal Joule heat can be reduced.

The invention discloses an organic doped film and a preparation method and application thereof in near-infrared light detection.The preparation method comprises the following steps that 1, P3HT serves as a polymer substrate, TPS-TF serves as a small molecule dopant, the P3HT and the TPS-TF are mixed according to a preset proportion through a solution method, a film is formed through a spin-coating method, and an active layer film is formed through annealing treatment; 2, the active layer thin film obtained in the step 1 is subjected to a doping reaction under irradiation of ultraviolet light, and the organic doped thin film is obtained. The active layer film is subjected to a doping reaction under the irradiation of ultraviolet light to generate polaritons, when a certain energy of infrared light is irradiated, the polaritons absorb the energy of the infrared light to perform inter-track transition of the polaritons, and the maximum responsivity R of the photoelectric device at the two horizontal ends based on the organic doped film is 711.9 mA / W, so that the photoelectric device can be applied to the field of photoelectric devices. The long-acting and short-acting memory characteristics are shown.

Provided are composite tungsten oxide particles which contain a composite tungsten oxide represented by general formula MxWyOz (0.20 < = x / y < = 0.37, 2.2 < = z / y < = 3.3) and having a hexagonal crystal system, and which are obtained by dispersing the composite tungsten oxide particles in a dispersion liquid of a liquid medium, or in a molar absorption coefficient curve in the range of 0.5 eV to 2.0 eV of a dispersion in which the composite tungsten oxide particles are dispersed in a solid medium, the peak value of an absorption curve in which surface plasma absorption exists locally in an orientation parallel to the c-axis of the composite tungsten oxide crystals contained in the composite tungsten oxide particles is less than the peak value of an absorption curve in which surface plasma absorption exists locally in the orientation parallel to the c-axis of the composite tungsten oxide crystals contained in the composite tungsten oxide particles. And the peak value of the absorption curve of polaron absorption is low.

The application discloses a solution-processed light-emitting layer and a narrow-band organic electroluminescent device with a co-operated evaporation phosphor sensitized layer, and a preparation method and application thereof. The organic electroluminescent device comprises a substrate, a hole injection layer, a hole transport layer, a solution-processed light-emitting layer, an evaporation sensitized layer, an electron transport layer, an electron injection layer and a metal electrode in sequence. The terminal light-emitting layer is formed by solution processing, and the sensitized layer is formed by evaporation, so that the sensitizer can be introduced into the device in the form of an independent functional layer, thereby reducing the dependence on the direct solution blending condition, adjusting the sensitized layer thickness, the sensitizer concentration and the interlayer spatial relationship, optimizing the exciton generation and energy transfer process, reducing the local exciton density, weakening the exciton-exciton and exciton-polaron annihilation, and thus improving the external quantum efficiency, the efficiency roll-off and the working stability of the device.

The invention relates to the technical field of photoelectric devices, in particular to an exciton polariton non-equilibrium photoelectric detector and a preparation method thereof, and the exciton polariton non-equilibrium photoelectric detector comprises a substrate, a metal bottom electrode layer, a two-dimensional exciton semiconductor material layer and a top transparent indium tin oxide (ITO) electrode layer which are sequentially stacked to form an open cavity type strong light-substance coupling structure. The two-dimensional exciton semiconductor material has relatively high exciton binding energy and oscillator strength, and can be strongly coupled with an in-cavity light field at room temperature to form a self-hybrid exciton polariton; the exciton polaritons are in a non-equilibrium state and participate in and regulate generation, distribution and transport of photon-generated carriers, so that the charge transport characteristic is improved, the effective diffusion length is increased, and the spectral response range is widened. And the transparent ITO electrode layer is also used as an anti-reflection coating, so that a light field in the cavity can be enhanced, strong coupling is promoted, and the detection performance is further improved. The preparation method is simple and controllable in process flow, and is suitable for stable preparation of devices and wide-spectrum and high-speed photoelectric detection application.

This invention provides an OLED device and an electronic device. The OLED device includes an anode, a cathode, and a light-emitting layer disposed between the anode and the cathode. Multiple light-emitting sublayers include: a first light-emitting sublayer configured as the main recombination region of electrons and holes; and a second light-emitting sublayer disposed adjacent to the first light-emitting sublayer. The triplet energy level of the host material in the second light-emitting sublayer is lower than that in the first light-emitting sublayer, causing triplet excitons generated in the first light-emitting sublayer to migrate to the second light-emitting sublayer. The second light-emitting sublayer is used to induce triplet-triplet annihilation of the migrated triplet excitons to generate singlet excitons. The OLED device of this invention, by setting multiple light-emitting sublayers to form an energy level gradient, guides the directional migration of triplet excitons, achieving spatial separation of excitons and polarons and local convergence of triplet excitons, thereby improving luminous efficiency by more than 10% and extending lifespan by more than 10%.

Two-dimensional (2D) crystals have renewed opportunities in artificial lattice design and assembly without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. Systems, methods, and devices present optical dispersion engineering in a superlattice structure including alternating layers of 2D excitonic chalcogenides and dielectric insulators. Examples demonstrate >90% narrowband absorption in <4 nm active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in cm2 samples. These superlattices show evidence of strong light-matter coupling and exciton-polariton formation with geometry-tunable coupling constants. The results demonstrate proof of concept structures with engineered optical properties and pave the way for a broad class of scalable, designer optical metamaterials from atomically-thin layers.