White-light organic electroluminescent device and preparation method thereof
An electroluminescent device, white light technology, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, electrical components, etc., can solve the problems of unfavorable carrier transport, high device turn-on voltage, difficulty in obtaining white light, etc. Efficiency, enhancing luminous intensity, suppressing annihilation effects
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Embodiment 1
[0051] Such as figure 2 As shown, the blue phosphorescent light-emitting layer 31 of the device selects blue phosphorescent material Firpic doped mCP, and the complementary phosphorescent light-emitting layer 32 selects yellow phosphorescent dye (t-bt). 2 Ir(acac) is doped with BPhen, the material of the electron transport layer 33 is BPhen, and the cathode layer 4 is made of Mg:Ag alloy and Ag. The whole device structure is described as:
[0052] Glass / ITO / mCP:Firpic(20nm) / BPhen:(t-bt) 2 Ir(acac)(15nm) / BPhen(40nm) / Mg:Ag(200nm) / Ag(10nm)
[0053] The preparation method is as follows:
[0054] ①Using detergent, deionized water, acetone solution and ethanol solution to ultrasonically clean the glass substrate and the transparent conductive film ITO on it, and then dry it with high-purity nitrogen after cleaning. The ITO film on the glass substrate is used as the anode layer of the device. The sheet resistance of the ITO film is 10Ω / sq and the film thickness is 180nm.
[0055] ②Move the...
Embodiment 2
[0061] Such as figure 2 As shown, the blue phosphorescent light-emitting layer 31 of the device selects blue phosphorescent material Firpic doped mCP, and the complementary phosphorescent light-emitting layer 32 selects green phosphorescent dye (tpbi). 2 Ir(acac) is doped with BPhen, the material of the electron transport layer 33 is BPhen, and the cathode layer 4 is made of Mg:Ag alloy and Ag. The whole device structure is described as:
[0062] Glass / ITO / mCP:Firpic(20nm) / BPhen:(t-bt) 2 Ir(acac)(15nm) / BPhen(40nm) / Mg:Ag(200nm) / Ag(10nm)
[0063] The preparation process of the device is similar to Example 1.
Embodiment 3
[0065] Such as figure 2 As shown, the blue phosphorescent light-emitting layer 31 of the device selects blue phosphorescent material Firpic doped mCP, the complementary phosphorescent light-emitting layer 32 selects red phosphorescent dye PQIr doped BPhen, the electron transport layer 33 material is BPhen, and the cathode layer 4 uses Mg:Ag. Alloy and Ag. The whole device structure is described as:
[0066] Glass / ITO / mCP:Firpic(20nm) / BPhen:PQIr(15nm) / BPhen(40nm) / Mg:Ag(200nm) / Ag(10nm)
[0067] The preparation process of the device is similar to Example 1.
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