The invention relates to a JCD integrated device based on a P type
epitaxy and a preparation method thereof, and belongs to the technical field of power
semiconductor integration. The preparation method mainly comprises the following process steps of preparing a substrate; forming an N+ buried layer; growing a P type epitaxial layer; forming a penetration isolation region; preparing field
oxygen;performing N trap injection and trap pushing; performing P trap injection and trap pushing; performing
JFET grid
electrode N type region injection and junction pushing; preparing gate
oxygen and
polycrystalline silicon; performing N+ injection; performing P+ injection; preparing
ohm holes; performing annealing activation; performing deposition and
etching a
metal layer; integrating PJFET,
CMOS, nLDMOS (and / or without) Poly resistors, Poly diodes, Poly capacitors and trap resistors into the same
chip. The JCD integrated device provided by the invention has the advantages that the high-
low voltage device compatibility is good; the
isolation effect is good; the
mask templates are few; the
JFET has the advantages of high precision
simulation features, great
input impedance, high-speed, good anti-
radiation features and the like; the integration of the low-
voltage JEFT devices with high-
voltage control DMOS parts and low-
voltage logic
CMOS parts is realized; the JCD integrated device can beapplied to the
process design of the power source management IC, protection circuits and integrated operation amplifiers.