77 results about "Electron distribution" patented technology

The present disclosure relates to a lithium electrode, comprising a porous metallic current collector; and lithium metal inserted into pores present in the metallic current collector.

The lithium electrode according to the present disclosure can increase contact surface between lithium metal and a current collector to improve the performances of a lithium secondary battery, and can exhibit uniform electron distribution therein to prevent the growth of lithium dendrites during the operation of a lithium secondary battery, thereby improving the safety of a lithium secondary battery.

In the case of a thick light-absorbing layer 2, a phenomenon of a decrease in the time resolution occurs. However, when the thickness of the light-absorbing layer 2 is limited, a portion of low electron concentration in one electron group is cut out, and hence overlap regions of adjacent electron concentration distributions decrease. Therefore, by shortening the transit time necessary for the passage of electrons, regions of overlapping electron distributions due to diffusion can also be suppressed. Furthermore, the strength of an electric field within a light-absorbing layer can be increased by thinning the light-absorbing layer. Therefore, the time resolution of infrared rays can be remarkably improved by a synergistic action of these effects. If it is assumed that the time resolution is 40 ps (picoseconds), for example, when the thickness of a light-absorbing layer is 1.3 μm which is nearly equal to the wavelength of infrared, then a possible time resolution is 7.5 ps when this thickness is 0.19 μm.

The invention discloses a method for coarsening a surface of a light-emitting diode (LED) with the aid of metal nanoparticles, belonging to the technical field of manufacture of semiconductor optoelectronic materials and devices. The method comprises the steps: firstly, growing an LED epitaxial wafer on a semiconductor substrate, wherein the LED epitaxial wafer sequentially comprises an N-GaN film, a quantum well layer and a P-GaN layer; then depositing a layer of metal nanoparticles on the surface of the P-GaN layer with the aid of ultraviolet light in the solution of metal salts; placing the LED epitaxial wafer after being deposited with the metal nanoparticles in an etchant solution made from a certain proportion of hydrofluoric acid and oxidant; and performing wet etching with the aid of ultraviolet light. By depositing the metal nanoparticles on the N-GaN film, the electron distribution on the surface of the N-GaN film can be changed, the etching rate is increased, thereby being favorable to forming of a coarsened structure. The method disclosed by the invention is suitable for etching of different semiconductor materials and coarsening of the LED epitaxial wafer; and compared with the prior art, the cost is low, the coarsened area is large, the operation is simple, and an ideal coarsened effect can be obtained.

The invention discloses a preparation method of a GaN-based LED epitaxial structure. The preparation method comprises the following steps of: preparing a nucleating layer, an undoped GaN layer, an N-type GaN layer, and an InGaN/GaN superlattice quantum well structure all which are sequentially laminated; growing an InGaN/GaN preposed quantum well structure, a multi-quantum-well light-emitting layer structure, an AlGaN layer, a low-temperature P-type layer, a P-type electron blocking layer and a P-type GaN layer by gradually changing the temperature from high temperature to low temperature. The preparation method is characterized in that the InGaN/GaN preposed quantum well structure is grown by a temperature-changing method, electron distribution in the light-emitting quantum well can be modulated by the preposed quantum well structure according to the flowing method of buffered electrons to the P end, so that the electrons can be uniformly distributed in the light-emitting quantum well, the internal quantum efficiency is enhanced and the light-emitting efficiency of the epitaxial structure is improved.

An organic semiconductor device in which recombination of holes and electrons and photoelectric conversion in an organic semiconductor layer are efficiently allowed to occur. The device comprises a bipolar organic semiconductor layer where electrons and holes move, a hole giving/receiving electrode which gives/receives holes to/from the organic semiconductor layer, an electron giving/receiving electrode which is spaced a predetermined distance from the hole giving/receiving electrode and gives/receives electrons to/from the organic semiconductor layer, a hole-side gate electrode which is opposed to a region of the organic semiconductor layer near the hole giving/receiving electrode with an insulating layer between the hole-side gate electrode and the region and serves to control the hole distribution in the organic semiconductor layer, and an electron-side gate electrode which is opposed to the region of the organic semiconductor layer with the insulating layer therebetween and serves to control the electron distribution in the organic semiconductor layer.

The invention designs electrostatic focused femtosecond stripes disguise tube, the disguised tube cathode 1 being a circular plate-shaped; the main-body of grid 2 being the cylindrical shape, the end having a outer convex station 21, the convex station 21 having a grid network; the focused electrode 3 using cylindrical structure; the end of the anode 4 near the focused electrode 3 being bowl structure, the small end surface of the bowl structure having a center hole 43, and the end near the deflector plate 5 being cylinder shape structure; the deflector plate 5 being a pair of tilted strip plate; the diameter of the main-body of grid 2 compared with the diameter of the focused electrode 3 being ratio of 1.1~2.8. Through the said structure, and using Monte Carlo method for sampling, using the finite difference method to calculate the electron distribution, using four bands Runge-Kutta method to simulate and trace a large number of photoelectrons trace for statistic and analysis, and finally it provides the basic parameters of the disguised tube space modulation transfer function and time distinguish ability.

The invention discloses an accurate multi-valued memory cell programming method. The accurate multi-valued memory cell programming method comprises the following steps of 1, applying low programming pulse voltage to a unit in an erasing state, and programming through a continuous multi-pulse ISPP method to obtain a lowest-threshold voltage programming state, 2, verifying if after programming, threshold voltage reaches verifying voltage VPV1 of first-stage programming or not, wherein if the threshold voltage reaches the verifying voltage VPV1 of the first-stage programming, the first-stage programming is stopped and last programming pulse voltage V1max of the first-stage programming is recorded, 3, carrying out ISSP-type programming, wherein the last programming pulse voltage V1max of the first-stage programming is utilized as initial voltage, 4, verifying if after programming, threshold voltage reaches verifying voltage VPV2 of second-stage programming or not, wherein if the threshold voltage reaches the verifying voltage VPV2 of the second-stage programming, the second-stage programming is stopped and last programming pulse voltage V2max of the second-stage programming is recorded, and if the threshold voltage does not reach the verifying voltage VPV2 of the second-stage programming, the second-stage programming is carried out sequentially, and 5, carrying out a process same as above until all bits are stored. After programming, narrow electron distribution is realized.

A step is provided between a substrate surface of a select gate and a substrate surface of a memory gate. When the substrate surface of the select gate is lower than the substrate surface of the memory gate, electrons in a channel upon writing obliquely flow in the step portion. Even if the electrons obtain the energy required for passing a barrier during the oblique flow, the electron injection does not occur because electrons are away from the substrate surface. The injection can occur only on a drain region side from a position where the electrons reach the substrate surface. As a result, the injection of the electrons into a gap region is suppressed, so that the electron distribution comes close to the hole distribution. Therefore, variation in a threshold value upon information retention is suppressed, and information-retaining characteristics of a memory cell are improved.

The invention provides a direct methanol fuel cell catalyst and a preparation method thereof. The direct methanol fuel cell catalyst comprises carbon black, and fluorine and nitrogen which are doped in the carbon black, wherein the fluorine accounts for 0.1-20% of the weight of the direct methanol fuel cell catalyst and the nitrogen accounts for 0.1-20% of the weight of the direct methanol fuel cell catalyst. Compared with the conventional nitrogen-doped nonmetal oxygen reduction catalyst, the direct methanol fuel cell catalyst takes the carbon black as a carbon material which is sequentially doped with fluorine atoms and nitrogen atoms, and has the advantages as follows: firstly, the fluorine atoms and the nitrogen atoms have different electronegativity from oxygen, and the fluorine atoms have relatively large electronegativity and have a relatively strong electron-withdrawing property, so that synergy of the fluorine atoms and the nitrogen atoms can weaken the bond energy of chemical bonds between oxygen atoms in an oxygen molecule and can increase the speed rate of an oxygen reduction reaction; secondly, the synergy of the fluorine atoms and the nitrogen atoms also can affect the electron distribution of the carbon black, change the bond valence way of carbon atoms and improve the catalytic activity of the catalyst in the oxygen reduction reaction; and finally, the carbon black has low micropore content, so that the direct methanol fuel cell catalyst can facilitate transportation of reactants and is simple in preparation method and relatively low in cost.

The invention relates to a preparing method for glyphosate and belongs to the technical field of chemical engineering. The preparing method specifically comprises the four steps of synthesis of iminodiacetic acid, preparation of pmida, preparation of glyphosate and solid and liquid separation. According to the preparing method, firstly, precious metal silver is loaded on titanium dioxide, the surface nature of titanium dioxide is influenced, electron distribution is changed, and catalytic activity is improved; then, titanium dioxide loaded with silver is loaded into activated carbon and irradiated with an ultraviolet source. The selectivity of glyphosate is greatly improved, the oxidization process of pmida is greatly shortened, the yield of glyphosate is increased to 96.3%, and the product purity can reach 97.6%; besides, the content of methyl aldehyde is low, fewer products are generated, and the requirement of the nation for environment friendliness is met.

The invention discloses a bright light organic light-emitting device which comprises an electronic transmission layer and an organic light-emitting layer. The organic light-emitting layer is composed of blue light body materials and blue light dyestuff. A transition layer is arranged between the electronic transmission layer and the organic light-emitting layer and is composed of electron trap materials and transition layer body materials. According to the organic light-emitting device, the transition layer used for improving the electron distribution condition is arranged between the electronic transmission layer and the organic light-emitting layer, so that the balance of charge carriers is achieved, the service life of the organic light-emitting device is prolonged, the formation of excitons cannot be influenced, and efficiency cannot be influenced. According to the blue light organic light-emitting device, the transition layer used for improving the electron distribution condition is arranged between the electronic transmission layer and the organic light-emitting layer, so that the balance of charge carriers is achieved, the service life of the bright light organic light-emitting device is prolonged, the formation of excitons cannot be influenced, and efficiency cannot be influenced.

The invention discloses a flower-shaped nitrogen-doped carbon-spinel type microspherical catalyst with high specific surface area as well as a preparation method and application thereof. The method comprises the steps of mixing ethanol, ammonia water, water, tetraethyl orthosilicate and dopamine hydrochloride uniformly, centrifuging, and calcining to obtain nitrogen-doped carbon-silica particles; adding the nitrogen-doped carbon-silica particles into water, mixing uniformly, adding nitrate, urea and sodium hydroxide, and mixing uniformly to obtain mixed liquid; heating, centrifuging, and calcining to obtain the flower-shaped nitrogen-doped carbon-spinel type microspherical catalyst with high specific surface area. According to the preparation method provided by the invention, the process is simple; dopamine hydrochloride is adopted as a carbon source, thereby enabling silica microspheres to have rich porous structures and high frame strength; nitrogen doping can change the electron distribution of carbonaceous materials, thereby providing possibility for diffusion of ions to micropores. The active substances of the catalyst are spinel type species, and no noble metal is used; the catalyst has the advantages of low preparation cost, large specific surface area, rich surface active sites, strong stability, high catalytic activity, and the like.

The invention relates to immunogen and coatinggen of chloramphenicol and application thereof in collaurum test paper, and belongs to the technical field of immunology. The immunogen and the coatinggen are a product of hapten coupling carrier protein obtained by oxidizing the chloramphenicol through potassium permanganate. The hapten is similar to a chloramphenicol counterpart in the aspects of molecular structures, stereochemistry and electron distribution; and hapten molecules have active groups which are convenient to couple with a protein carrier, and the active groups do not influence the electron distribution of analyte molecules. After hemocyanin is coupled by the hapten, organisms can generate antibodies with high valence and good specificity aiming at the chloramphenicol, and the antibodies are adsorbed to glass cellulose membranes; and the coatinggen constructed by coupling human serum protein can be adsorbed to nitrocellulose membranes and is used for constructing the chloramphenicol collaurum test paper.

The invention provides an epitaxial structure for optimizing an ultraviolet light-emitting diode (LED) luminous layer. The epitaxial structure sequentially comprises a sapphire substrate, a high-temperature UGaN layer, an N-type GaN layer, a multi-quantum well (MQW) structure, an active region quantum-well luminous layer and a P-type GaN layer from bottom to top, wherein the active region quantum-well luminous layer comprises In<x>Ga<1-x>N/AlGaN multi-quantum wells in 3-30 periods, each In<x>Ga<1-x>N/AlGaN multi-quantum well also comprises a coverage layer in behind of a well layer, Al constituent doped in the coverage layer is gradually grown, the introduction of the Al constituent is gradually risen in a slope way, is performed at a constant speed and finally is gradually reduced in the slope way, the time and the ratio of the two gradual changing process in the slope way are same, and the amount of the Al constituent accounts for 1-60% of Al constituent in a multi-quantum barrier. By the growth method of the epitaxial structure, electron leakage can be reduced, the non-radiation recombination is reduced, the electron distribution in the quantum wells is improved, the current is uniformly extended, and the growth method is an effective method for improving the luminous efficiency of an ultraviolet LED; and meanwhile, the device has favorable luminous efficiency, and the photoelectric performance of the device is further improved.

The invention provides a novel F-doped g-C3N4 photocatalytic material prepared by a microwave method and the application of the novel F-doped g-C3N4 photocatalytic material. The method comprises the following steps of: preparing a body g-C3N4 material by adopting a thermal polymerization method; and carrying out microwave etching on the body g-C3N4 in a medium by using a microwave digestion instrument to form nitrogen vacancies on the surface of the body g-C3N4 material. According to the F-doped g-C3N4 material disclosed by the invention, F atoms are introduced into nitrogen vacancies and formC-F bonds with C atoms, so that electrons are distributed unevenly to form a surface polarization field, and the hole electron recombination rate of the surface of the material is reduced, and the activity of the photocatalyst is enhanced. The degradation rates of the material to diclofenac sodium, phenol and bisphenol A are 100%, 55% and 65% respectively, and are superior to those of the body g-C3N4. The material disclosed by the invention is simple in process and suitable for industrial mass production; and the photocatalytic degradation technology is applied to the field of PPCPs degradation, so that the material has very high application prospect and practical value.

In a case of writing to a trap type non-volatile memory cell that includes: a laminated insulating film, containing a charge accumulation layer, that is formed on a semiconductor substrate where source, drain and well regions are formed; and a first gate electrode formed on the laminated insulating film, charge injections that are carried on a single memory node multiple times under two or more different writing conditions, the writing condition is a combination of a well voltage applied to the well, a drain voltage applied to the drain and a gate voltage is applied to the first gate. Thereby, it is possible to form a trapezoid-shaped electron distribution in the charge accumulation layer, and thus prevent the charge retention characteristic from deteriorating.

A hot carrier photodetector has been developed that absorbs approximately 80% of broadband infrared radiation by using a planar nanoscale back metal contact to silicon. Based on the principles of the hot carriers generation in ultrathin metal films, silicon-based CMOS image sensors are developed which operate in the IR diapason. The device uses absorption in an ultrathin metallic nanostructure to generate therein a non-equilibrium electron distribution which subsequently is injected into the silicon material via a Schottky contact at the Si body, thus generating a photoresponse to an incident IR radiation. A pixeled array including interconnected hot carriers metallic nanostructured cell(s) and traditional RGB elements is envisioned to enable RGB-IR imaging from a single silicon based wafer.

The invention discloses a method for preparing a magnetic field controlled cation exchange membrane. According to the method, magnetic particles are added into the cation exchange membrane, and a cation exchange rate and an exchange form can be subjected to trace control by virtue of action of the magnetic particles. Moreover, due to the addition of the magnetic particles, the cation exchange membrane is controlled by an external electric signal, and a stress field generated by the magnetic particles generates direct guide and influence effects on aggregation and exchange of the cation. When alocal exchange rate needs to be improved in a certain area of the whole cation exchange membrane, a corresponding magnetic field needs to be applied to the area, arrangement and magnetic orientationof the magnetic particles in the exchange membrane can be influenced by the external magnetic field, a magnetic field area is formed in the exchange membrane, and the magnetic field area possibly influences positive electron distribution density on the cation exchange membrane, so that a through-rate of the cation inside and outside the membrane is changed, and then the cation exchange can be controlled.

A method of comparing two conformers in which any score is obtained by determining the field value for molecule A at the coordinates of molecule B's field point. Molecule B's field point does not have to be very close to molecule A's field point to get a good overlay score: it just needs to be in a region where molecule A's field is large. This overcomes a limitation of conventional pseudo-Coulombic scoring in which a low score is achieved when extrema of large extent overlap but have their minimum points widely separated. The method can be applied to molecular mechanics modelling using atom centred charges (ACCs) and extended electron distributions (XEDs) as well as to quantum mechanics models.

A sensing system comprises a material having a matrix structure in which a plurality of sensing elements are embedded, the sensing elements having electron distribution and/or transport properties that change in response to a change in a physical or chemical property of the material. The sensing system further comprises a receiver, including an antenna, the receiver arranged to receive a source RF signal and a returned RF signal, the returned RF signal being received from the material. A change in the electron distribution and/or transport properties of the sensing elements cause the source RF signal to change, such that a change in a property of the material can be determined from the returned RF signal. A corresponding method of sensing a change in a property of a material is also provided.

The invention provides a monomolecular gene sequencing method. The monomolecular gene sequencing method comprises the following steps: growing scattered quantum dot particles on a silicon carbide substrate; guiding tested DNA molecules to enter gaps; acquiring electron distribution of graphene by adopting a single electron electrode array, and transmitting the distribution information to a computer through the fast electronics; reestablishing the time and sinuous track information of the DNA molecules from high-speed signals output by the single electron electrode array; acquiring a system response matrix; and inverting the system response matrix, thus obtaining a vector composed of nucleotide species with sequences. The invention further provides a monomolecular gene sequencing device. The monomolecular gene sequencing device comprises a quantum dot thin film gap module, a DNA molecular movement control module, a single electron read-out module, a system response matrix calculation module and a DNA sequence estimation module. With the adoption of the monomolecular gene sequencing method and the monomolecular gene sequencing device, the sequencing precision of detection can be effectively improved, the sequencing time can be reduced, the biased error caused by gene amplification can be avoided, and the monomolecular gene sequencing method and the monomolecular gene sequencing device are particularly suitable for hand-held terminals and application occasions with high requirement on real-time property.