56 results about "Electron distribution" patented technology

The invention discloses a preparation method of a rare earth element doped nickel-based selenide nano-material and application of the rare earth element doped nickel-based selenide nano-material in electro-catalysis water full-hydrolysis reaction. According to the method, nickel salt, cerium salt, selenium dioxide and potassium chloride are prepared into electrolyte, and the electrolyte is subjected to electro-deposition on a foamed nickel substrate to obtain Ce-doped Ni0.85Se nanoparticles growing on foamed nickel. The crystal structure and electron distribution of Ni0.85Se are optimized by doping trace rare earth element cerium, so that the HER and OER performances of the Ni0.85Se are greatly improved. The prepared catalyst is self-supporting closely-packed nanoparticles, the formed amorphous structure is easy to expose more active sites, the catalyst has good electrocatalytic hydrogen evolution and oxygen evolution performance under alkaline conditions, the overpotential in electrocatalysis of nickel-based selenide is greatly reduced, and the electrocatalytic performance of nickel-based selenide is improved. And excellent electro-catalytic activity is shown in electro-catalytic water full hydrolysis. And the self-supporting electrode is not easy to fall off due to generation of bubbles in the reaction process, so that the working stability of the catalyst is improved.

The invention provides an Au nanocluster-Cu monatomic / titanium dioxide photocatalyst as well as a preparation method and application thereof, and belongs to the technical field of photocatalysis. According to the invention, the Cu monatomic atom is used as a catalyst for hydrogen evolution reaction, the Cu monatomic atom and the Au nano-cluster are loaded at the same time, the Cu monatomic atom can be used as an electron transport bridge to regulate the electronic structure of the Au nano-cluster, the synergistic effect of the Cu monatomic atom and the Au nano-cluster is realized, the catalytic activity is regulated and controlled together, and efficient series connection of multi-step reaction is realized; therefore, the product selectivity can be accurately regulated and controlled; the catalytic oxidation reaction can be dynamically adjusted through carrier mediation or direct contact by virtue of the electron interaction between the Cu monatomic and the Au nano-cluster, so that the electron distribution in the catalytic process is favorably optimized, the reaction energy barrier of C-C bond breakage and hydroxymethyl oxidation is regulated and controlled, and the dynamic performance of generating GA and hydrogen through photocatalytic oxidation of EG is improved.

The invention belongs to the technical field of organic photoelectric materials, and discloses an organic metal iridium complex light-emitting material and an organic electroluminescent device.According to the organic metal iridium complex light-emitting material, after triphenylsilyl is connected into a ligand of Lb, due to the fact that the triphenylsilyl has the large steric hindrance effect and the hyperconjugation effect, the light-emitting effect of the organic metal iridium complex light-emitting material is improved; therefore, the electron distribution can be regulated and controlled, the excited state can be stabilized, the stability of the material is enhanced, and the properties of high luminous efficiency and long service life are obtained. Meanwhile, by introducing other substituents into La and Lb ligands, the wavelength and electron distribution of the organic metal iridium complex material are further adjusted, so that the driving voltage of the organic electroluminescent device prepared when the organic metal iridium complex is used as a luminescent layer doping material is obviously reduced, the luminous efficiency is obviously improved, and the service life is obviously prolonged.

The application discloses a method for realizing ionosphere aircraft stealth based on regulating and controlling electron distribution of tail area, first, evolution time scales under different non-extended parameters are calculated; and according to the superhot electron energy and particle flux per unit time required by different non-extended parameters, a radio frequency discharge plasma generator is controlled to generate plasma corresponding to the non-extended parameters; then, in the grid electric field, electrons enter the acceleration field area, and ions are directly discharged to the tail area of the aircraft without acceleration; the regulation and control duration under different non-extended parameters is determined by the evolution time scale corresponding to the non-extended parameter. The application changes the electron distribution of the ionosphere aircraft tail area by randomly injecting high-energy electrons into the tail area of the aircraft, regulates and controls the evolution law and characteristic scale of the non-linear local cavity in the tail area which cannot be eliminated, makes the anti-stealth method of monitoring the motion of the density cavity to detect the ionosphere stealth aircraft invalid, and thus realizes the stealth of the ionosphere stealth aircraft.

The invention relates to a cusped magnetic field configuration-based direct-current ion thruster device, and relates to the field of ion thrusters, the cusped magnetic field configuration-based direct-current ion thruster device comprises a shell, a tungsten filament cathode, an inner magnetic ring, an outer magnetic ring, an upstream anode and a radial anode, and the outer magnetic ring and the inner magnetic ring are fixed on the side surface of a discharge chamber to establish cusped magnetic field configuration to restrain plasma; the axial gas distributor serves as an upstream anode, the radial gas distributor serves as a radial gas supply anode, electrons can move from a tungsten filament cathode to the upstream anode or the radial gas supply anode under the action of an electric field, and in the process, the electrons are captured by a cusped magnetic field and then generate ionization collision with gaseous working medium atoms to generate ions; according to the structure of the thruster, electrons in the discharge chamber are distributed more uniformly, uniform ionization of working medium gas atoms in the discharge chamber is achieved, and the thruster has the technical advantages of being high in ionization efficiency and large in thrust adjusting range.

The present invention discloses a method for preparing an LED epitaxial wafer, comprising: S1, providing a substrate; S2, growing a nitride buffer layer on the substrate; S3, growing an undoped nitride layer on the nitride buffer layer; S4, growing an n-type nitride layer on the undoped nitride layer; S5, growing an insertion layer unit on the n-type nitride layer, the insertion layer unit comprising a pre-nitride insertion layer, an oxide insertion layer, and a post-nitride insertion layer grown in sequence; S6, growing a quantum well light-emitting layer on the insertion layer unit; S7, growing a p-type layer on the quantum well light-emitting layer. The method for preparing the LED epitaxial wafer of the present invention decelerates electrons through the high potential barrier of the oxide insertion layer, buffers the injection of electrons into the light-emitting layer, reduces the recombination of electrons crossing the light-emitting layer with holes in the p-type layer, improves the droop effect under high current, and at the same time, the electron diffusion is more uniform after passing through the oxide insertion layer, improves the uniformity of the electron distribution in the light-emitting layer, increases the light-emitting efficiency, and improves the epitaxial optoelectronic uniformity and consistency.

The application discloses a phosphorescent dopant material of a platinum compound, a preparation method, an organic electroluminescent device and application, the phosphorescent dopant material is a platinum compound with a structure shown in chemical formula I, the compound introduces a bicyclic structure on the basis of a parent nucleus, a high conjugated electron distribution system, so that the electron distribution and the excited state can be controlled, and the stability of the material is enhanced. The organic electroluminescent device prepared by adopting the compound as a light-emitting layer dopant material has high luminous efficiency, long service life and the technical effect of improving the driving voltage.

The invention relates to an organic compound, an organic light-emitting device and a display panel. The organic compound has a structural formula as shown in a formula (1): # imgabs0 #. The conjugate length and electron distribution of molecules are effectively adjusted in a nitrogen atom para-position connection mode, so that a higher first singlet excited state energy level is favorably formed, the structure is also favorable for constructing good coplanarity, and a higher glass transition temperature is further realized; in addition, a benzene ring of the phthalimide is easy to introduce a plurality of functional groups, which is beneficial for obtaining a lower refractive index; when a film layer formed by the organic compound and a high-refractive-index film layer are combined to form a covering layer, and the covering layer is applied to the organic light-emitting device, the light-emitting efficiency and the color purity of the organic light-emitting device can be remarkably improved.

The application provides a heterocyclic compound and an organic electroluminescent device thereof, and particularly relates to the technical field of organic electroluminescent materials.The heterocyclic compound provided by the application has suitable HOMO and LUMO energy levels, can be well matched with adjacent functional layers, can make the hole and electron distribution in the organic electroluminescent device balanced, can improve the recombination probability of excitons, and thus can realize the maximum recombination of carriers; in addition, the heterocyclic compound provided by the application also has a high triplet energy level, good film-forming property and thermal stability.When the heterocyclic compound provided by the application is applied to an organic electroluminescent device as the host material of a light-emitting layer, the luminous efficiency of the device can be effectively improved, the service life of the device can be prolonged, and the overall performance of the device can be significantly improved.

The invention discloses a method for realizing invisibility of an ionospheric aircraft based on regulation and control of electron distribution of a tail region. The method comprises the following steps: firstly, calculating evolution time scales under different non-extensive parameters; the super-thermal electron energy and the particle flux in unit time are required to be injected according to different non-extensive parameters; controlling a radio frequency discharge plasma generator to generate plasmas corresponding to the non-extensive parameters; enabling electrons to enter an accelerating field area through a grid electric field, and directly discharging ions to a tail area of the aircraft without accelerating; the regulation and control duration under the condition of different non-extensive parameters is determined by the evolution time marks corresponding to the non-extensive parameters. According to the invention, high-energy electrons are randomly injected into the tail area of the aircraft to change the electron distribution of the tail area of the ionospheric aircraft so as to regulate and control the evolution law and the characteristic scale of the non-linear local cavities of the tail area which cannot be eliminated, so that the anti-stealth method for detecting the ionospheric stealth aircraft by monitoring the movement of the density cavities is invalid; therefore, the invisibility of the ionized layer invisibility aircraft is realized.

The invention belongs to the technical field of organic functional materials, and particularly relates to an N-substituted phenothiazine derivative and a preparation method and application thereof.The N-substituted phenothiazine derivative comprises at least one of a unilateral compound and a bilateral compound, the structural formula of the unilateral compound is shown in the specification, and the structural formula of the bilateral compound is shown in the specification. According to the N-substituted phenothiazine derivative disclosed by the invention, the conjugation degree of a molecular skeleton is adjusted and an electron withdrawing group F atom is introduced to a peripheral benzene ring of a unit A to regulate and control overall electron distribution, so that the synthesized N-substituted phenothiazine derivative has unique photophysical properties and high selectivity, high sensitivity and high responsiveness to hypochlorite ions; the method can be widely applied to the fields of chemical sensing, environment detection, biological imaging and the like.

The invention relates to the technical field of light emitting diodes, and discloses an LED epitaxial structure capable of improving hydrolysis resistance and a preparation method thereof, the LED epitaxial structure comprises a substrate, and the substrate is sequentially provided with a buffer layer, an unintentionally doped GaN layer, an N-type semiconductor layer, a multi-quantum well layer, an electron barrier layer and a P-type semiconductor layer; wherein the N-type semiconductor layer comprises a first N-type doped GaN layer, a graphene layer and a second N-type doped GaN layer which are stacked in sequence. According to the invention, the epitaxial structure is optimized, so that the transverse distribution of carriers on the N-type semiconductor layer can be improved, the electron aggregation effect can be obviously weakened, the hydrolysis resistance of an LED is improved by reducing the defect density of the N-type layer and improving the electron distribution uniformity, the luminous efficiency of an LED chip is improved, and the production cost of the LED chip is not increased.

Aiming at the problem that the service life of a device is shortened due to electrode damage caused by ion bombardment, the invention provides a grid regulation and control type vertical structure micro-nano plasma triode which is of a vertical structure and comprises a substrate, a lower electrode, a grid, an upper electrode, a vertical insulating layer and a horizontal insulating layer. The lower electrodes are arranged above the substrate, the grid electrode is arranged above the lower electrodes, the horizontal insulating layers cover the upper layer and the lower layer of the grid electrode, the vertical insulating layers are distributed on the side edges of the grid electrode, the upper electrodes are arranged above the upper horizontal insulating layers, the edges of the upper electrodes are flush with the edges of the vertical insulating layers, and a vertical air channel is formed between the two upper electrodes. The grid electrode can effectively regulate and control ion and electron distribution in a channel, collision ionization is increased, micro-nano plasma formation is promoted, and the working voltage of the device is reduced. In addition, the grid electrode can regulate and control the electric field distribution in the vertical channel, change the ion motion trail, inhibit high-speed ions from directly bombarding the electrode, and prolong the service life of the device.

Disclosed in the present invention are a correction method and apparatus for an electron collision reaction rate, and a device and a medium. The method comprises: performing calculation on the basis of a Boltzmann equation corresponding to the electron distribution in a six-dimensional phase space, so as to obtain the electron energy distribution in the six-dimensional phase space, and then performing calculation on the basis of the electron energy distribution, so as to obtain electron collision reaction coefficients; on the basis of a preset Poisson equation and a preset particle transport equation, performing calculation to obtain the electric-field distribution and electron density in the six-dimensional phase space; on the basis of the electric-field distribution and the electron density, obtaining a corresponding electron energy transport equation, obtaining, on the basis of the electron energy transport equation, an electron energy loss balance in an inelastic collision process, and then obtaining a correction coefficient for an electron collision reaction rate; and on the basis of the correction coefficient for the electron collision reaction rate and the electron collision reaction coefficients, obtaining a corrected electron collision reaction rate. By means of the present invention, an electron collision reaction rate can be corrected.

The present disclosure relates to a physical vapor deposition device and method, which comprises a reaction chamber, a first magnetron assembly, a support part and a second magnetron assembly. The top of the reaction chamber is provided with a target material. The first magnetron assembly is arranged on the back of the target material. The second magnetron assembly is arranged on the back of the support part. When the first magnetron assembly works, a magnetic field is generated at the target material, so that the positive ions of the plasma are attracted by the cathode negative electricity, hit the target material, knock out the atoms of the target material, and deposit on the substrate to obtain a film layer. In addition, the magnetic field lines generated by the second magnetron assembly when working are complementary to the magnetic field lines generated by the first magnetron assembly. Not only can the electron collision probability be further increased and the deposition rate be improved, but also the electron distribution trajectory can be changed, so that the magnetic field intensity of each part of the target material is relatively uniform. In this way, the thickness uniformity of each position of the target material is good, thereby the utilization rate of the target material can be improved, the service life of the target material can be prolonged, and the cost can be reduced.

The invention discloses a special-shaped LED display screen image display control method and system, and relates to the technical field of display control, and the method comprises the steps: obtaining the image data of a special-shaped LED display screen, and analyzing the RGB chromatic value of the image data; converting the RGB chromatic value into a quantum dot energy level regulation and control parameter, and calculating a control signal of quantum dot energy level transition; driving the quantum dot coating to perform directional electron transition to generate an electron distribution state; calculating an optical compensation parameter based on the electron distribution state, and modulating the ionization inert gas of the special-shaped LED display screen by using the ionization path matrix to form a plasma cloud; the electron distribution state and the plasma cloud are integrated into a fusion optical signal, the optical path difference of the special-shaped LED display screen is dynamically corrected through the optical field interference processor, and a zero-distortion image of the fusion optical signal is displayed on the special-shaped LED display screen. By means of the photoelectric fusion regulation and control technology, high-precision zero-distortion image display of the special-shaped LED display screen is achieved.

The invention discloses a room-temperature NO2 gas sensor based on a ZnSe-ZnS heterostructure and a preparation method thereof, and relates to the technical field of gas sensing, the room-temperature NO2 gas sensor comprises an Al2O3 substrate electrode and the ZnSe-ZnS heterostructure, and the ZnSe-ZnS heterostructure is coated on the Al2O3 substrate electrode to form the NO2 gas sensor; the ZnSe-ZnS heterostructure comprises a zinc selenide nanosheet substrate and zinc sulfide nanoparticles modified on the surface of the zinc selenide nanosheet substrate; according to the invention, ZnS nanoparticles are creatively adopted to modify ZnSe nanosheets to construct a heterostructure, and the design has the following advantages: firstly, the ZnS nanoparticles can effectively regulate and control electron distribution on the surface of ZnSe to form more active sites; secondly, energy band matching at a heterogeneous interface is beneficial to charge transfer, and the response sensitivity of the material to target gas is improved; and finally, the common agglomeration problem of the monatomic catalyst can be avoided through nano-particle modification, and the stability of the material is ensured.

This application relates to the field of medical device technology, and provides an electron emitter, an electron transmitter, an X-ray tube, and a medical imaging device. The electron emitter includes an emitting part, a non-emitting part, and a supporting substrate. Both the emitting and non-emitting parts are disposed on the supporting substrate, and the non-emitting part surrounds the outer periphery of the emitting part. The electron emitter provided by this application can ensure that the electron beam is emitted as perpendicularly as possible to the emitting part, reducing the amount of electron diffusion to the outer periphery of the emitting part, thereby reducing the bending deformation of the electron beam path and improving the uniformity of electron distribution.

The invention relates to a preparation method and application of an oxygen evolution electrocatalyst rich in cation defects. According to the preparation method disclosed by the invention, the NiFe-LDH nanosheet is ablated by femtosecond laser, so that the NiOOH / NiFe-LDH heterostructure with abundant cation defects is prepared. Laser ablation enables the transverse size of the NiOOH / NiFe-LDH nanosheet to be greatly reduced, the surface of the NiOOH / NiFe-LDH nanosheet becomes obviously rough, nickel cation vacancies effectively regulate and control electron distribution on the surface of the catalyst, and oxygen evolution reaction kinetics of the catalyst is promoted. The overpotential of NiOOH / NiFe-LDH at 100 mA cm <-2 > is 389 mV which is obviously lower than 429 mV of NiFe-LDH, and the oxygen evolution stability of the NiOOH / NiFe-LDH is also superior to that of the precursor NiFe-LDH. The results show that after the NiFe-LDH is ablated by femtosecond laser, the alkaline oxygen evolution performance of the obtained NiOOH / NiFe-LDH heterostructure catalyst is obviously improved.

The invention belongs to the field of organic photoelectric materials, and discloses a preparation method and application of a tetraphenyl cyclopentadienone-based fluorescent material. The fluorescent molecule is constructed by constructing different donor units with triphenylamine and tetraphenylethylene based on tetraphenylcyclopentadienone. The fluorescent material has the following structures I and II: four triphenylamine structures or tetraphenyl ethylene structures are introduced into tetraphenyl cyclopentadienone to construct the fluorescent material. As a conjugation effect exists between double bonds of carbonyl and double bonds on a ring, cyclopentadienone can form a resonance structure. Therefore, electrons are more uniformly distributed in molecules, the stability of the molecules is enhanced, and the reaction activity of the molecules is also influenced. Benefited from the introduction of a molecular rotor, the fluorescent property is researched. A thought is provided for the design of the molecules.

The application discloses a kind of based on electronic density and distribution uniformity Fractal dimension calculation method and general detection device, belong to material microstructure characterization technical field.The method determines material chemical formula unit total price electron number, theoretical dense density and molar mass, detects actual density and calculates porosity;Collect surface topography gray data, calculate electronic distribution uniformity by normalized variance;Total price electron number density is calculated, combined with fitting proportion coefficient, and the fractal dimension is obtained by general formula.The detection device uses modular architecture, including basic parameter input, density detection, uniformity acquisition, main control calculation and result output module, each module can be independently replaced, and the main control module is built-in core algorithm.The application does not need large microscopes, realizes fast, low-cost detection, adapts to various solid materials, wide protection range, easy industrialization, solves the problems of high cost, complicated process, poor universality and easy to avoid in prior art.

A system and method for automatic optimization of an imaging recipe of an electron beam tool are provided. The method includes obtaining material and structural properties of a semiconductor specimen of interest (SOI); performing a first simulation of the interaction between irradiated electrons of a primary beam and the SOI at various primary beam configurations to obtain maps of escaped electron distribution in terms of polar angle and escape energy; performing, based on the maps, a second simulation of the collection and detection of escaped electrons at different imaging configurations to obtain a signal profile of a measurement of interest (MOI) on the SOI at each imaging configuration; and creating an imaging recipe for the electron beam tool, comprising primary beam parameters and tool imaging parameters configured to achieve optimal contrast of the MOI in the signal profile.

In the structure of the organic electroluminescent compound, an electron-rich group formed by carbazole and phenyl connected with the carbazole is substituted by deuterium and is matched with a deuterated P-type compound of a core region (HOMO electron distribution region), so that the organic electroluminescent compound has the advantages that the electron-rich group can be used as an electron-rich group; according to the present invention, the N-type compound can effectively improve the chemical stability, the photoelectric stability and the thermal stability of the light-emitting material structure so as to improve the stability and the service life of the light-emitting device using the material, and can form the good Premix material with the deuterated P-type compound in the core region (HOMO electron distribution region), in the evaporation process, the P / N stability and the mass production stability are good, and the formed Premix material has more balanced carrier mobility, so that the efficiency of a device is greatly improved, and the service life of the device is greatly prolonged.

The invention belongs to the technical field of high polymer materials, and particularly relates to a cycloolefin copolymer with improved optical performance and a preparation method thereof. Sulfur atoms are introduced into the cycloolefin copolymer, so that the electron distribution and space structure of molecules can be changed, and the refractive index of the polymer is improved; meanwhile, an aromatic group with high refractive index is introduced and has a larger conjugated system, so that the polarizability of molecules can be remarkably improved, and the refractive index and the optical performance of the cycloolefin copolymer are further improved. The cycloolefin copolymer provided by the invention has extremely high light transmittance in a visible light range, can effectively reduce scattering and absorption of light, and can remarkably improve light transmission efficiency and reduce signal loss when products such as optical lenses and optical fibers are manufactured, so that the overall performance of an optical system is improved.

This invention discloses an asymmetric photoresponsive electronic pump hydrogen production catalyst, its preparation method, and its application, belonging to the field of catalyst technology. The asymmetric photoresponsive electronic pump hydrogen production catalyst comprises a Ru nanocluster composite material consisting of Ru nanoclusters and a carbon-nitrogen material with Ni single atoms embedded within its lattice. ac -Ni sa / NC catalyst; the Ru ac -Ni sa In the / NC catalyst, Ni and Ru respond asymmetrically to light irradiation. Under illumination, electrons migrate from Ni to Ru, resulting in electron-rich and electron-deficient sites at Ru and Ni sites, respectively. This invention utilizes light irradiation to disrupt the equilibrium state. This asymmetric photoresponsive electron-pumped hydrogen production catalyst drives directional electron flow, maintaining the asymmetric electron distribution under light irradiation. This allows for the manipulation of photogenerated electrons and the overcoming of unfavorable reducing environments, thereby accelerating the conversion of methane and carbon dioxide into syngas.

This invention discloses a high-entropy carbon oxide / resin encapsulation coating for shielding high-energy electrons, its preparation method, and its application, belonging to the field of radiation hardening technology. This invention overcomes the problem of electronic component failure caused by high-energy electron irradiation. The invention involves high-energy ball milling of Nb, Mo, Ta, W, WO3, and carbon powder to obtain a high-entropy carbon oxide (NbMoTaW)C. 1‑x O x The mixture is combined with a resin matrix, coated onto electronic devices, and cured by heating to obtain an encapsulation coating that shields high-energy electrons and radiation-resistant electronic devices. This invention introduces oxygen into high-entropy materials, regulating the lattice structure and electron distribution, promoting lattice contraction and structural densification, and increasing the probability of interaction between high-energy electrons and atomic nuclei and extranuclear electrons in the material, thereby enhancing the material's radiation shielding capability. This invention features a simple process, strong adhesion to the device shell, easy thickness control, and suitability for complex device surface forming, significantly improving the engineering applicability of device packaging.

The invention discloses a multi-level treatment method for real-time data of power generation equipment of a new energy station, and relates to the technical field of multi-level treatment of data of photovoltaic power generation stations. According to the method, a station electron distribution diagram is obtained, sub-regions are divided, and multi-dimensional data such as voltage, current, temperature and power are collected on the equipment and sub-region layers; and after abnormity elimination and normalization processing, constructing an AI dynamic multi-level governance model, and outputting a governance state vector and a response evaluation result. By calculating a fluctuation abnormal coefficient, a sub-region governance response consistency coefficient and a governance collaboration efficiency coefficient, operation state judgment of corresponding components, sub-regions and cross-region levels is carried out, comparison analysis is carried out with three preset threshold values, and a governance strategy is triggered step by step. According to the invention, real-time cooperative treatment and dynamic optimization of the equipment level, the sub-region level, the cross-region level and the station level of the photovoltaic station can be realized, and the overall operation stability and the strategy response efficiency of the system are improved.

Methods, systems, and devices for NAND structures with polarized materials are described. A memory device may include a polarized dielectric material located relatively near to a channel, which may reduce interference between cells. The polarized dielectric material may include a dielectric material with a fixed polarity and having a first surface with a negative polarity oriented towards the channel. The negative polarity of the polarized dielectric material may affect an electron distribution of the channel by shifting the electron distribution closer to an associated charge trapping material. The shifted electron distribution may reduce an effect of an electric field of any aggressor cells of the memory device on one or more victim cells, by creating a more uniform channel electron distribution and increasing gate control relative to a channel without the effects of the polarized dielectric material.

The present invention discloses bipyridine compounds and their preparation methods and applications, and belongs to the field of organic light-emitting materials and semiconductor technology. The compound is based on 6,6'-bis (pyrimidine-5-yl)-2,2'-bipyridine as the main skeleton, and different substituents are substituted at the 4-position / 4'-position of pyridine and the 2-position / 2'-position of pyrimidine to adjust its electron distribution, and the central symmetric compound formed can be used as an efficient electron transport material or a guest luminescent material with excellent performance. It is proved by performance test that the 6,6'-bis (pyrimidine-5-yl)-2,2'-bipyridine compounds of the present invention can be applied to electron transport layer as efficient electron transport material, or applied to the light-emitting layer of OLED device as guest luminescent material, can effectively improve the efficiency of electroluminescent device, and extend the service life of electroluminescent device.

The application discloses an ionosphere model construction method, device and equipment and a computer storage medium. The method comprises the following steps: obtaining a first observation quantity to obtain a first ionosphere delay; obtaining N sub-ionospheres based on ionosphere division, and presetting a function category corresponding to each sub-ionosphere; obtaining prior electron distribution data in an ionosphere physical model, obtaining prior ionosphere delay corresponding to each sub-ionosphere based on the prior electron distribution data, and obtaining a proportion factor representing a proportional relationship between the prior ionosphere delays of each sub-ionosphere; obtaining a virtual ionosphere delay of each sub-ionosphere based on the first ionosphere delay and the proportion factor; and constructing an ionosphere observation equation based on the function category, the virtual ionosphere delay and the first ionosphere delay to obtain an ionosphere model. The embodiment of the application is helpful to improve the positioning accuracy based on the ionosphere model.