Novel F-doped g-carbon nitride photocatalytic material prepared by microwave method and application of material

A technology of photocatalytic materials and microwave method, which is applied in the field of analytical chemistry to achieve the effect of improving photocatalytic performance

Active Publication Date: 2020-09-01
北京水木宇杰环境科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But at present, there are few applications of doping technology an...

Method used

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  • Novel F-doped g-carbon nitride photocatalytic material prepared by microwave method and application of material
  • Novel F-doped g-carbon nitride photocatalytic material prepared by microwave method and application of material
  • Novel F-doped g-carbon nitride photocatalytic material prepared by microwave method and application of material

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Experimental program
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Effect test

Embodiment 1

[0096] 1) Novel microwave etching of F-doped g-C 3 N 4 Preparation of photocatalytic materials

[0097] Weigh 10-15 g of precursor urea powder and pour it into an alumina crucible with a cover, and place it in a muffle furnace after the overall sealing is completed, then set the heating rate at 10 °C / min to heat to 550 °C, and Keep at this temperature for 3 h. After the firing is complete, take out the reactant, put it into a mortar and grind it into powder after fully cooling, without obvious particles, and obtain the bulk g-C 3 N 4 sample.

[0098] 2) Using 0.1 mol / L hydrofluoric acid solution, the prepared bulk g-C 3 N 4 Perform microwave etching:

[0099] ① In the preparation process, start the microwave digestion instrument, check the smoothness of the pipeline and open the fume hood;

[0100] ②Sample loading: Use an analytical balance to accurately weigh 1 g of carbon nitride powder, then use a pipette gun to measure 15 ml of hydrofluoric acid with a concentratio...

Embodiment 2

[0109] to combine figure 2 Fourier transform infrared spectrum shows that, 2800 to 3400 cm -1 The broad absorption peak of is due to the N–H stretching mode and the surface-adsorbed H 2 Due to O. at 1200 to 1700 cm -1 A series of peaks in the range correspond to the typical C–N stretching mode of C–N heterocycles. at 808 cm -1 The sharp peak at is attributed to the ring-shaped breathing vibration mode characteristic of the conjugated heptazine heterocycle. No obvious changes were observed in the FTIR of the three samples, only a slight decrease in the intensity of the FT-IR bands, proving that after the introduction of F atoms, the overall g-C 3 N 4 The structural integrity remains unchanged. Furthermore, F-doped g-C 3 N 4 (-4.063 mV) and bulk g-C 3 N 4 (-3.29mV) exhibited a negative zeta potential, indicating that g-C 3 N 4 There is a net positive surface charge on the structure. The small change in zeta potential proves that corrosion and exfoliation occurred ...

Embodiment 3

[0111] Preparation of F doped g-C by hydrofluoric acid 3 N 4 , Ontology g-C 3 N 4 and water digestion g-C 3 N 4 The fluorescence spectrum, such as image 3 As shown, the samples all exhibited a broad emission peak centered at about 450 nm with a tail extending to 700 nm. with body g-C 3 N 4 and water digestion g-C 3 N 4Compared to the F-doped g-C 3 N 4 Has a weaker emission peak, exhibits significant fluorescence quenching behavior, and highly inhibits the recombination of carriers due to the enhanced migration of electron-hole pairs, indicating the photocatalytic activity of the material after hydrofluoric acid microwave etching Significant improvement.

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Abstract

The invention provides a novel F-doped g-C3N4 photocatalytic material prepared by a microwave method and the application of the novel F-doped g-C3N4 photocatalytic material. The method comprises the following steps of: preparing a body g-C3N4 material by adopting a thermal polymerization method; and carrying out microwave etching on the body g-C3N4 in a medium by using a microwave digestion instrument to form nitrogen vacancies on the surface of the body g-C3N4 material. According to the F-doped g-C3N4 material disclosed by the invention, F atoms are introduced into nitrogen vacancies and formC-F bonds with C atoms, so that electrons are distributed unevenly to form a surface polarization field, and the hole electron recombination rate of the surface of the material is reduced, and the activity of the photocatalyst is enhanced. The degradation rates of the material to diclofenac sodium, phenol and bisphenol A are 100%, 55% and 65% respectively, and are superior to those of the body g-C3N4. The material disclosed by the invention is simple in process and suitable for industrial mass production; and the photocatalytic degradation technology is applied to the field of PPCPs degradation, so that the material has very high application prospect and practical value.

Description

technical field [0001] The invention belongs to the technical field of analytical chemistry, in particular to a novel microwave method for preparing F-doped g-C 3 N 4 Materials and their applications. Background technique [0002] At present, with the development of social economy, pharmaceuticals and personal care products in wastewater have become a new type of pollutants, mainly including human and veterinary drugs, stimulants, developer, cosmetics, etc. The massive production of PPCPs poses a great threat to the ecological environment and human health. Recent studies have shown that certain PPCPs cannot be removed by biological wastewater and conventional drinking water treatment processes, including coagulation, sedimentation and filtration. Therefore, alternative treatment techniques need to be found, and the main advantage of photocatalytic treatment lies in the use of sunlight to activate reactants, thereby avoiding harsh reaction conditions and the use of toxic a...

Claims

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Application Information

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IPC IPC(8): B01J27/24B01J37/34C02F1/30C02F101/34C02F101/36C02F101/38
CPCB01J27/24B01J35/004B01J37/346C02F1/30C02F2101/363C02F2101/345C02F2101/38C02F2305/10Y02W10/37
Inventor 白小娟孙博轩卢雄威李海燕王旭煜谭朝洪
Owner 北京水木宇杰环境科技有限公司
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