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External magnetic insulation ion diode for prdoucing large area strong flow pulse ionic beam

A high-current pulse and ion beam technology, which is applied in the field of plasma/ion engineering, can solve problems such as uneven spatial distribution of ion beams, uneven magnetic field distribution, and high diode pulse voltage.

Inactive Publication Date: 2005-08-03
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Concave spherical external magnetically insulated ion diodes, such as the ETIGO type, because of their good geometric focus, but the high pulse voltage of the diode and the working characteristics of generating high-power-density ion beams determine that the working life of the anode film is short, and usually can only be used once.
[0007] Ring-type external magnetically insulated ion diodes, such as the Anaconda type, have a focusing structure, but because the applied magnetic field is not closed-loop, the magnetic field distribution is uneven, resulting in uneven spatial distribution of ion beams

Method used

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  • External magnetic insulation ion diode for prdoucing large area strong flow pulse ionic beam
  • External magnetic insulation ion diode for prdoucing large area strong flow pulse ionic beam
  • External magnetic insulation ion diode for prdoucing large area strong flow pulse ionic beam

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Embodiment 1

[0051] A scientific research unit requires a beam spot area up to 100×100mm 2 , the beam density can reach 300A / cm 2 , power density up to 100MW / cm 2 , the high-current pulsed ion beam generating device with ion beam inhomogeneity less than 10%, the external magnetic insulation diode of the prior art TEMP type circular sector circular columnar structure, the beam spot area of ​​the high-current pulsed ion beam generated is about 25cm 2 , the ion beam inhomogeneity exceeds 50%, does not meet the requirements, now adopts the external magnetic insulation ion diode of the ellipse fan ring columnar structure of the present invention, and its detailed parameters of the diode are as follows:

[0052] Both the anode [1] and the cathode [12] adopt an elliptical fan ring columnar structure, the height of the cylinder of the anode [1] and the cylinder of the cathode [12] are both 110 mm, and the inner cylinder of the anode inlaid with polyethylene film [4] [ 22] The projection is an el...

Embodiment 2

[0059] A plasma source high-tech company requires a beam spot area up to 120×150mm 2 , the beam density can reach 300A / cm 2 , power density up to 100MW / cm 2 , the high-current pulsed ion beam generating device with ion beam inhomogeneity less than 15%, the external magnetic insulation diode of the prior art TEMP type circular sector circular columnar structure, the beam spot area of ​​the high-current pulsed ion beam generated is about 25cm 2 , the ion beam inhomogeneity exceeds 50%, does not meet the requirements, now adopts the external magnetic insulation ion diode of the ellipse fan ring columnar structure of the present invention, and its detailed parameters of the diode are as follows:

[0060] Both the anode [1] and the cathode [12] adopt an elliptical fan-shaped columnar structure, the height of the cylinder of the anode [1] and the cylinder of the cathode [12] are both 160mm, and the inner cylinder of the anode [4] embedded with polyethylene film [ 22] The vertical ...

Embodiment 3

[0067] A functional film production unit requires a beam spot area up to 150×150mm 2 , the beam density can reach 300A / cm 2 , power density up to 100MW / cm 2 , the high-current pulsed ion beam device with ion beam inhomogeneity less than 10%, the external magnetic insulation diode of the prior art TEMP type circular sector circular columnar structure, the beam spot area of ​​the high-current pulsed ion beam produced is about 25cm 2 , the ion beam inhomogeneity exceeds 50%, does not meet the requirements, now adopts the external magnetic insulation ion diode of the ellipse fan ring columnar structure of the present invention, and its detailed parameters of the diode are as follows:

[0068] Both the anode [1] and the cathode [12] adopt an elliptical fan ring columnar structure, the height of the cylinder surface of the anode [1] and the cylinder surface of the cathode [12] are both 210 mm, and the inner cylinder surface of the anode inlaid with polyethylene film [4] [ 22] The ...

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Abstract

An outer magnet insulation ionic diode for generating large area of strong current pulse ionic beams includes an anode inserted with polyvinyl films and a cathode set with uniform distributed penetrated lattices characterizing: the anode and cathode are designed as oval fan-like ring cylinder structure, the narrow end of the gap between the inner cylinder face of the anode and the outer cylinder face of the cathode inner thin plate is 4.1-4.8mm, the wide end is 5.1-6mm, the area of the polythene film is 230x100-260x200sqmm, numbers of the lattices are 108-220, which keeps the effective penetration degree of the cathode thin plate at 65%, the pulse magnetic intensity at 0.89-1.04%.

Description

technical field [0001] The invention relates to an externally magnetically insulated ion diode (Externally Magnetically Insulated ionDiode-EMID) for generating a large-area high-intensity pulsed ion beam (High-Intensity Pulsed IonBeam-HIPIB), and belongs to the field of plasma / ion engineering. Background technique [0002] Intense pulsed ion beam usually refers to ion energy E=10 5 ~10 7 eV, pulse width τ≤1μs, ion beam current density J i >>1A / cm 2 , power density p=10 7 ~10 14 W / cm 2 , energy density q>1J / cm 2 Ion beam; also known as Intense Pulsed Ion Beam-IPIB or High Power Ion Beam-HPIB, HIPIB technology originated from inertial confinement nuclear fusion and high-energy fusion in the late 1970s Density physics research, in the past two decades, with short-pulse, medium-power (10 6 ~10 9 W / cm 2 ) high-current pulsed ion beam, because of its instantaneous irradiation effect on the surface of materials, has attracted extensive attention in the field of m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J27/00H01J37/08H01J37/30H05H1/00
Inventor 雷明凯徐忠成董志宏苗收谋韩晓光
Owner DALIAN UNIV OF TECH
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