The application discloses a nonvolatile memory unit and a
memory array. The nonvolatile memory unit comprises a nonvolatile memory device and a bidirectional threshold switch device. The nonvolatile memory device comprises a first
transistor with a floating gate, a second
transistor with a control gate and a third
transistor with a tunneling gate, and the floating gate is connected with the control gate and the tunneling gate respectively. The bidirectional threshold switch device comprises a first
electrode, a second
electrode and a functional layer between the two electrodes. The first
electrode is connected with one of the source or the drain of the first transistor, the second electrode is configured to be connected with a word line, and the other of the source or the drain of the first transistor is configured to be connected with a
bit line. The source and the drain of the second transistor are short-circuited and configured to be connected with a
control line, and the source and the drain of the third transistor are short-circuited and configured to be connected with a tunneling line. The application adopts the bidirectional threshold switch device with a two-end structure, simplifies the
physical structure and makes the
layout of the overall
memory array more compact.