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4results about How to "Simple physical structure" patented technology

Secondary intelligent defense organization management and control device for transformer substation

The invention discloses a substation secondary intelligent defense organizing management and control device which comprises an information acquisition module, a maintenance interval defense organizing surface generation module, a maintenance interval five-prevention verification module, a computer key communication module, a defense organizing tool and a base installation module. According to the device, an air switch lock, an operation handle lock, a protection pressing plate lock and a padlock which are provided by a defense arrangement tool and a base installation module are used for isolating equipment of a transformer substation, the possibility of misoperation accidents of field workers is effectively eradicated, and a correct maintenance task is generated through an information acquisition module and a maintenance interval defense arrangement surface generation module; the accuracy of a maintenance task is further ensured through the maintenance interval five-prevention verification module, the unlocking and locking of a lock are realized through the establishment of the computer key communication module, and the maintenance work is changed from an original manual control management mode depending on a system and manual active control into a technical control management mode supervised and restricted by a third-party device. The working efficiency is effectively improved and the working quality is ensured.
Owner:ZHONGWEI POWER SUPPLY COMPANY OF STATE GRID NINGXIA ELECTRIC POWER

Non-volatile memory cells and memory arrays

PendingCN122121161Acompact layoutSimple physical structureRead-only memoriesBit lineMechanical engineering
The application discloses a nonvolatile memory unit and a memory array. The nonvolatile memory unit comprises a nonvolatile memory device and a bidirectional threshold switch device. The nonvolatile memory device comprises a first transistor with a floating gate, a second transistor with a control gate and a third transistor with a tunneling gate, and the floating gate is connected with the control gate and the tunneling gate respectively. The bidirectional threshold switch device comprises a first electrode, a second electrode and a functional layer between the two electrodes. The first electrode is connected with one of the source or the drain of the first transistor, the second electrode is configured to be connected with a word line, and the other of the source or the drain of the first transistor is configured to be connected with a bit line. The source and the drain of the second transistor are short-circuited and configured to be connected with a control line, and the source and the drain of the third transistor are short-circuited and configured to be connected with a tunneling line. The application adopts the bidirectional threshold switch device with a two-end structure, simplifies the physical structure and makes the layout of the overall memory array more compact.
Owner:UNITED NOVA TECH - XIANFENG (SHAOXING) CORP

Integrated film integrating pressure sensing structure and heating structure and cushion

The invention discloses an integrated thin film integrating a pressure sensing structure and a heating structure and a cushion, the integrated thin film comprises a thin film base layer, the integrated thin film also comprises a heating function layer, the heating function layer is printed on a first surface of the thin film base layer and forms a heating loop capable of conducting current; the integrated thin film further comprises a pressure sensing layer, the pressure sensing layer is formed by printing a conductive pressure-sensitive material on the second face of the thin film base layer or printing the conductive pressure-sensitive material on the surface of the heating function layer in an overlapped mode to form a sensing area capable of responding to pressure changes, and the sensing area and the heating loop area are integrally arranged on the thin film base layer. Compared with the prior art, the key point of the integrated film is that the heating and pressure sensing functions are integrated in the same film base layer, so that the function combination of high integration level and high efficiency is realized. According to the integrated thin film, the number and the thickness of components are greatly reduced, the manufacturing process is simplified, the production cost is reduced, and the safety and the reliability of a product are remarkably improved.
Owner:SHENZHEN BAOSHENGDA IND CO LTD

Solid-state pulse power supply system of field anti-configuration device and time sequence control method of solid-state pulse power supply system

The invention discloses a solid-state pulse power supply system of a field anti-configuration device and a time sequence control method of the solid-state pulse power supply system. The solid-state pulse power supply system comprises a multiplex load coil, and a bias branch, an ionization branch, an anti-field branch and a steady-state branch which are connected to the two ends of the coil in parallel. A main switch of each branch circuit adopts a solid-state switch element, natural follow current is realized by using a diode or a bidirectional structure in the branch circuit, and an independent follow current branch circuit is thoroughly canceled. Meanwhile, in cooperation with a microsecond time sequence control method, a steady-state branch circuit is conducted in advance to excite the reactor to form virtual impedance, and pure physical series voltage division protection is achieved. According to the invention, full time sequence multiplexing of the coil function is realized, the stray inductance, the size and the cost of the system are reduced, kHz-level repetition frequency operation can be supported, and the reliability and the stability of the field inversion configuration device are obviously improved.
Owner:NOVA FUSION ENERGY TECHNOLOGY (SHANGHAI) CO LTD