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317results about How to "Avoid padding" patented technology

Method of forming STI oxide regions and alignment marks in a semiconductor structure with one masking step

The method of the present invention applies to any semiconductor structure provided with polysilicon filled deep trenches formed in a silicon substrate coated by a Si3N4 pad layer both in the "array" and "kerf" areas. First, a photoresist mask is formed onto the structure and patterned to expose the deep trenches only in the "array" areas. Deep trenches are then anisotropically dry etched to create recesses having a determined depth. Next, the photoresist mask is removed only in the "array" areas. A step of anisotropic dry etching is now performed to extend said recesses down to the desired depth to create the shallow isolation trenches. The photoresist mask is totally removed. A layer of oxide (STI oxide) is conformally deposited by LPCVD onto the structure to fill said shallow isolation trenches in excess. The structure is planarized to create the STI oxide regions and expose deep trenches in the "kerf" areas. The polysilicon in these deep trenches is partially or totally removed by etching. Finally, the Si3N4 pad layer is eliminated, creating recesses that will be used as alignment marks for the subsequent photolithography steps. If the polysilicon is not etched, the above method will produce polysilicon bumps instead that can be used for the same purpose.
Owner:IBM CORP

ZnO nanometer array ultraviolet detector and manufacturing method thereof

The invention discloses a ZnO nanometer array ultraviolet detector and a manufacturing method of the ZnO nanometer array ultraviolet detector. The structure of the ultraviolet detector is of a metal-semiconductor-metal contact type. The ultraviolet detector sequentially comprises a substrate of ITO conductive glass or FTO conductive glass, a ZnO film, an electrode at the other end and a ZnO nanometer array from bottom to top. The substrate is an electrode at one end; the ZnO film covers the substrate, the electrode at the other end is located in the middle position of the ZnO film, and the ZnO nanometer array is arranged on the periphery of the electrode at the other end; the area of the electrode at the other end is 10%-12% of the total area of the substrate. The manufacturing method comprises the following steps: firstly, performing sputtering on the substrate through magnetic control to produce a layer of ZnO film, secondly, installing electrodes on the ZnO film and leading out one end of a wire, thirdly, covering the electrodes with PDMS protection layers, fourthly, developing the ZnO nanometer array through a hydrothermal method, finally, scraping off part of ZnO at the edge on one side of a sample so that the substrate of the conductive glass can be exposed, and leading out the other end of the wire. Thus, the ultraviolet detector is obtained. The ultraviolet detector and the manufacturing method of the ultraviolet detector have the advantages of being simple in manufacturing process, easy to operate, low in cost, high in device sensitivity, stable in performance and the like.
Owner:UNIV OF SCI & TECH BEIJING
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