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Device and method for on-orbit monitoring of charging of satellite material surface

A surface potential and satellite technology, applied in the field of space applications, can solve the problems of complex structure and complicated production, and achieve the effect of simple physical structure and easy space loading.

Active Publication Date: 2013-06-26
NO 510 INST THE FIFTH RES INST OFCHINA AEROSPAE SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the defects of complex structure and cumbersome production of existing on-orbit monitoring devices, the purpose of the present invention is to provide a device and method for on-orbit monitoring of satellite surface charging conditions

Method used

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  • Device and method for on-orbit monitoring of charging of satellite material surface

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Embodiment

[0032] like figure 1 A device for on-orbit monitoring of surface charging of satellite materials is shown, and the device includes an electron gun 1, a non-contact potentiometer probe 2, a three-dimensional transmission mechanism 3, a non-contact surface potentiometer 4, and an electron beam current density measurement system 5 , monitoring electrode 6, support structure 7, first solenoid valve 8, second solenoid valve 9, diffusion pump 10, third solenoid valve 11, mechanical pump 12, vacuum box 13, vacuum wall 14, measurement circuit interface 15 and measurement circuit 16.

[0033] Wherein, the electron gun 1 is installed above the inside of the vacuum box 13, and the emission end of the electron gun 1 is directly opposite to the center of the monitoring electrode 6; the monitoring electrode 6 is located inside the vacuum box 13 and does not contact with the inner wall around the vacuum box 13; the sample is placed on the surface of the monitoring electrode 6; The distance ...

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Abstract

The invention relates to a device and a method for on-orbit monitoring of charging of a satellite material surface, belonging to the technical field of space application. The device comprises an electron gun, a non-contact potentiometer probe, a three-dimensional transmission mechanism, a non-contact surface potentiometer, an electron beam current density measuring system, a monitoring electrode,a supporting structure, a first electromagnetic valve, a second electromagnetic valve, a diffusion pump, a third electromagnetic valve, a vacuum box, a mechanical pump, a vacuum penetrating wall, a measurement circuit interface and a measurement circuit. The test method comprises the steps as follows: sending an electron to a sample for monitoring the electrode surface under a vacuum condition, adjusting the position of the non-contact potentiometer probe through the three-dimensional transmission mechanism, recording charging potential Vsurface on the sample surface, measuring leakage current I through the measurement circuit, and finally obtaining a proportional relation coefficient K by known sample resistance rho according to the formula that Vsurface is proportional to KrhoI. According to the invention, the on-orbit surface charging condition of the satellite material is inverted by monitoring the leakage current of the sample in a space environment, and the device and the methodhas the advantage of simple physical structure and is easy to carry in space.

Description

technical field [0001] The invention relates to an on-orbit monitoring device and method for surface charging of satellite materials, belonging to the technical field of space applications. Background technique [0002] The electrification in the satellite is generally caused by the injection of high-energy electrons with an energy of 0.1-10 MeV in space into the material. The above-mentioned high-energy electrons can penetrate satellite structures (such as satellite surface materials, cable sheaths, etc.) and deposit charges on cable insulation layers, printed circuit boards, capacitor components, integrated circuit packages or suspension conductors. If the deposition rate of incident electrons in the medium exceeds its discharge rate, the charge density in the medium will gradually increase, and the electric field strength will also increase. When the built-in electric field strength exceeds the breakdown strength of the dielectric material, internal discharge will occur, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/60
Inventor 汤道坦秦晓刚薛玉雄柳青陈益峰李存惠
Owner NO 510 INST THE FIFTH RES INST OFCHINA AEROSPAE SCI & TECH
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