Ion implantation device and adjustment method of beam current density distribution

Abstract

The invention provides an ion implantation device and an adjustment method of beam current density distribution. The irradiation areas of band-shaped ion beams in an amount of m (m is an integer over 2) at least partially overlap. In an ion implantation device which achieves regulated implantation amount distribution on a glass substrate, the beam current density distribution of each band-shaped ion beam can be adjusted with high efficiency. Each band-shaped ion beam is set as a target distribution of an adjustment target as a beam current density distribution. According to a pre-determined sequence, the beam current density distribution from a first band-shaped ion beam to a (m-1)th band-shaped ion beam, enabling the band-shaped ion beam to enter into a first allowing range with respect to the target distribution. Based on the difference between the distribution obtained from the adjustment result of each band-shaped ion beam and the distribution obtained from the target distribution of ion beams in an amount of m, new target distribution for adjusting a mth beam current density distribution is set, and the mth beam current density distribution is adjusted, enabling the mth beam current density distribution to enter into a second allowing range with respect to the new target distribution.

Description

technical field [0001] The present invention relates to an ion implanter for forming a predetermined implantation amount distribution on a glass substrate by overlapping areas irradiated with a plurality of ribbon ion beams, and a method for adjusting beam current density distribution used in the ion implanter. Background technique [0002] In recent years, the upsizing of liquid crystal products represented by liquid crystal televisions has been remarkable. In the semiconductor manufacturing process, in order to process more liquid crystal panels in one process, attempts have been made to increase the size of glass substrates and obtain multiple liquid crystal panels from large glass substrates. An ion implantation apparatus, which is one of semiconductor manufacturing apparatuses, is required to be compatible with such a large glass substrate. [0003] In order to meet such demands, the ion implantation apparatus described in Patent Document 1 has been developed so far. ...

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Problems solved by technology

[0007] In general, the adjustment of the beam current density distribution in the ion beam overlapping region requires a large number of parameters to be adjusted and is complicated compared to the case of adjusting the beam current density distribution of one ion beam.

In the case of complex adjustments, if adjustments are made randomly, it will take a long time until the adjustments are completed.

In addition, if it takes a lot of time to adjust the beam current density distribution, there is also a problem that the productivity (processing capacity) of the ion implantation apparatus is reduced.

[0008] However, in Patent Document 1, regarding the adjustment of the beam current density distribution in the ion beam overlapping region, it is only described that the beam current density distribution in the ion beam overlapping region is adjusted to be different from that in other regions (non-overlapping regions). The beam current density distribution is roughly equal, and it is not disclosed how to adjust it to become an efficient adjustment

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