Plasma processing apparatus

Abstract

A disclosed plasma processing apparatus includes a chamber, a substrate support, a high frequency power source, and a bias power source. The high frequency power source generates high frequency power to generate plasma. The bias power source is connected to a bias electrode of the substrate support, and generates an electric bias. An edge ring mounted on the substrate support receives a pat of the electric bias through an impedance adjuster or receives another electric bias. An outer ring extends outside the edge ring in a radial direction, and receives a part of the high frequency power or other high frequency power.

Description

technical field [0001] Exemplary embodiments of the present invention relate to a plasma processing apparatus. Background technique [0002] The plasma processing apparatus is used for plasma processing of a substrate. The plasma processing apparatus includes a chamber, an electrostatic chuck, and a lower electrode. The electrostatic chuck and the lower electrode are arranged in the chamber. The electrostatic chuck is arranged on the lower electrode. The electrostatic chuck supports the edge ring placed thereon. The fringe ring is sometimes called the focus ring. The electrostatic chuck supports the substrate arranged in the area surrounded by the edge ring. When plasma processing is performed in the plasma processing apparatus, gas is supplied into the chamber. And, high-frequency power is supplied to the lower electrode. A plasma is formed from the gas in the chamber. Substrates are treated with chemical species such as ions and radicals from the plasma. [0003] ...

AI Technical Summary

Problems solved by technology

The substrate holder has bias electrodes

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