Electrostatic chuck apparatus

Active Publication Date: 2012-11-29
SUMITOMO OSAKA CEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0037]According to the electrostatic chuck apparatus of the present invention, the heating member is bonded to another main surface of the electrostatic chuck section via the sheet-like or film-like adhesive, and the electrostatic chuck section bonded with the heating member and the temperature adjusting base section completely or partly covered with the insulating sheet are bonded and integrated via the organic adhesive layer. Thus, it is possible to satisfactorily maintain the insulation between the electrostatic chuck section and the temperature adjusting base section by the insulating member, and as a consequence, the insulation breakdown can be prevented. Thus, it is possible to improve the voltage endurance between the electrostatic chuck section and the temperature adjusting base section.
[0038]Furthermore, since the heating member is bonded to another main surface of the electrostatic chuck section via the sheet-like or film-like adhesive, the gap between the electrostatic chuck section and the heating member can be constantly maintained, and the uniformity on the in-plane temperature in the mounting surface of the electrostatic chuck secti

Problems solved by technology

Furthermore, a difference is generated in the in-plane temperature distribution of the

Method used

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Examples

Experimental program
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Effect test

example 1

Manufacturing of Electrostatic Chuck Apparatus

[0130]The electrostatic chuck section 2 buried with the electrostatic adsorbing internal electrode 13 having a thickness of 20 μm in an inner section thereof was manufactured by a known method.

[0131]A mounting plate 11 of the electrostatic chuck section 2 is an aluminum oxide-silicon carbide composite sintered body containing silicon carbide of 8.5% by mass, and has a disk shape with a thickness of 0.5 mm and a diameter of 298 mm. Furthermore, the electrostatic adsorption surface of the mounting plate 11 is made to concave and convex surfaces by forming a plurality of protrusion sections 16 having a height of 40 μm, the top of the protrusion section 16 is a holding surface of the plate specimen W, and a cooling gas can be caused to flow in the groove formed between the concave section and the plate specimen W electrostatically adsorbed.

[0132]Furthermore, similar to the mounting plate 11, a support plate 12 is an aluminum oxide-silicon ca...

example 2

Manufacturing of Electrostatic Chuck Apparatus

[0161]The electrostatic chuck apparatus of Example 2 was manufactured similar to Example 1, except that the mounting plate 11 and the support plate 12 of the electrostatic chuck section 2 were the yttrium oxide sintered body, and the electrostatic adsorbing internal electrode 13 was the yttrium oxide-molybdenum conductive composite sintered body.

(Evaluation)

[0162]The electrostatic chuck apparatus of Example 2 was evaluated according to Example 1.

[0163]As a consequence, in (1) the voltage endurance, the leakage current in a case of applying the voltage of 10 kV or 4 kV was equal to or less than 0.1 μA, and showed the extremely satisfactory voltage endurance. In (2) the in-plane temperature control of the silicon wafer and the temperature rising and drop characteristics, it was found that the in-plane temperature of the silicon wafer is preferably controlled within a range of ±20° C. Furthermore, in (3) in the in-plane temperature of the s...

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PUM

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Abstract

The present invention provides an electrostatic chuck apparatus including:
    • an electrostatic chuck section having one main surface that is a mounting surface on which a plate specimen is mounted, and being equipped with an electrostatic adsorbing internal electrode; and a temperature adjusting base section that adjusts the electrostatic chuck section to a desired temperature, wherein a heating member is bonded to a main surface of the electrostatic chuck section, which is opposite to the mounting surface, via an adhesive material, the whole or a part of the main surface of the temperature adjusting base section, which is on the side of the electrostatic chuck section, is covered with a sheet-like or film-like insulating material, and the electrostatic chuck section bonded with the heating member and the temperature adjusting base section covered with the sheet-like or the film-like insulating material are bonded and integrated via an insulating organic adhesive layer formed by curing a liquid adhesive.

Description

TECHNICAL FIELD[0001]The present invention relates to an electrostatic chuck apparatus, more specifically, to an electrostatic chuck apparatus which is suitably used when adsorbing and fixing a plate specimen such as a semiconductor wafer through electrostatic force, is able to enhance the uniformity of in-plane temperature in a mounting surface with the plate specimen mounted thereon and is able to enhance the voltage endurance of a heating member, even in each process such as a film forming processing using a physical vapor deposition method (PVD) and a chemical vapor deposition method (CVD) in a semiconductor manufacturing process, an etching processing such as a plasma etching, and an exposure processing.[0002]This application claims priority to and the benefit of Japanese Patent Application No. 2010-018210 filed on Jan. 29, 2010, and Japanese Patent Application No. 2010-216823 filed on Sep. 28, 2010, the contents of which are incorporated herein by reference.BACKGROUND ART[0003...

Claims

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Application Information

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IPC IPC(8): H01L21/683
CPCH01L21/67103Y10T279/23H01L21/6831
Inventor KOSAKAI, MAMORUISHIMURA, KAZUNORISATOU, TAKASHIHAYAHARA, RYUUJIWATANABE, TAKESHIMORIYA, YOSHIAKIFURUUCHI, KEI
Owner SUMITOMO OSAKA CEMENT CO LTD
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