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Two-channel RC-LIGBT device and manufacturing method thereof

A dual-channel, device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems that affect the stability and reliability of LIGBT devices, the PN junction cannot be opened normally, and the PN junction conduction voltage drop increases and other issues, to achieve the effect of improving stability and reliability, low conduction voltage drop, and strong freewheeling ability

Active Publication Date: 2016-11-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under low temperature conditions, the turn-on voltage drop of the PN junction formed by the P-type collector region 8 and the N-type electric field cut-off region 7 increases, and it needs to be turned on under a larger current condition, resulting in a more obvious negative resistance phenomenon. , and even cause the PN junction formed by the P-type collector region 8 and the N-type electric field stop region 7 in the device to fail to open normally, which seriously affects the stability and reliability of LIGBT devices

Method used

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  • Two-channel RC-LIGBT device and manufacturing method thereof
  • Two-channel RC-LIGBT device and manufacturing method thereof
  • Two-channel RC-LIGBT device and manufacturing method thereof

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Embodiment 1

[0035] This embodiment provides a dual-channel RC-LIGBT device with a voltage level of 400V, and its cell structure is as follows figure 2 As shown, it includes a substrate 1, a silicon oxide dielectric layer 2 on the substrate 1, an N-type drift region 3 on the silicon oxide dielectric layer 2, an emitter structure on the N-type drift region 3, a gate structure, The collector structure and the first dielectric layer 14; the emitter structure is composed of a P-type base region 4, an N+ source region 5, a P+ contact region 6 and a metal emitter 12, wherein the P-type base region 4 is set on the N-type drift In region 3 and located on the left side of its top, P+ contact region 6 and N+ source region 5 are independently arranged in P-type base region 4, and the front surfaces of P+ contact region 6 and N+ source region 5 are both in phase with metal emitter 12 Contact; the gate structure is located on the side of the emitter structure and consists of a gate dielectric 10 and a...

Embodiment 2

[0038] This embodiment provides a dual-channel RC-LIGBT device with a voltage level of 400V, and its cell structure is as follows image 3As shown, it includes a substrate 1, a silicon oxide dielectric layer 2 on the substrate 1, an N-type drift region 3 on the silicon oxide dielectric layer 2, an emitter structure on the N-type drift region 3, a gate structure, A collector structure and a dielectric layer 14; the emitter structure is composed of a P-type base region 4, an N+ source region 5, a P+ contact region 6 and a metal emitter 12, wherein the P-type base region 4 is arranged in the N-type drift region 3 and located on the left side of its top, the P+ contact region 6 and the N+ source region 5 are independently arranged in the P-type base region 4, and the front surfaces of the P+ contact region 6 and the N+ source region 5 are in contact with the metal emitter 12; The gate structure is located on the right side of the emitter structure and is composed of a gate dielect...

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Abstract

The invention belongs to the power semiconductor integration circuit field and especially relates to a transverse reverse conducting insulated gate bipolar transistor (Reverse Conducting-LIGBT, RC-LIGBT) and a manufacturing method thereof. The device and the method are used for restraining a snapback phenomenon of a traditional RC-LIGBT device, simultaneously improving a reverse direction diode characteristic and increasing stability and reliability of the device. By using the RC-LIGBT device, through introducing a composite structure into a collector electrode terminal of the device to form a one-way conductive path possessing two channels, under a forward direction LIGBT work mode, an influence of an N-type collecting zone on a conduction characteristic is completely shielded, the snapback phenomenon is completely eliminated, a low conduction voltage drop which is the same with the voltage drop of a traditional LIGBT is possessed and stability and reliability of the device are increased. Simultaneously, under a reverse direction diode follow current work mode, two follow current channels are provided on the collector electrode terminal, a follow current capability is optimized and a small conduction voltage drop is possessed.

Description

technical field [0001] The invention belongs to the field of power semiconductor integrated circuits, and relates to a lateral insulated gate bipolar transistor (Lateral Insulated Gate Bipolar Transistor, LIGBT), in particular to a lateral reverse conduction type insulated gate bipolar transistor (Reverse Conducting-LIGBT, RC-LIGBT) and its preparation method. Background technique [0002] Lateral Insulated Gate Bipolar Transistor (LIGBT) is a new type of device in power integrated circuits. It not only has the advantages of LDMOSFET easy to drive, simple control, and easy integration, but also has the advantages of reduced conduction voltage of power transistors, large on-state current, and low loss. It has become one of the core devices of modern power semiconductor integrated circuits. Literature (Shigeki T., Akio N., Youi chi A., Satoshi S. and Norihito T. Carrier-Storage Effect and Extraction-Enhanced Lateral IGBT (E 2 LIGBT): A Super-High Speed ​​and Low On-stateVolt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L21/331
CPCH01L29/66325H01L29/7393
Inventor 张金平田丰境刘玮琪刘竞秀李泽宏任敏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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