32 results about "Iron injection" patented technology

The invention discloses a compound inoculant used for producing D-type graphite cast iron, which is characterized in that the weight percents of the constituents are as follows: magnesium 1.0-4.0, rare earth 4.0-8.0, titanium 4.0-9.0, aluminum 1.5-3.0, stibium 0.5-2.0, calcium 2.0-5.0, barium 1.0-4.0, silicon 35-50 and the balance of iron. When the compound inoculant is employed to carry out inoculation on the melted iron with high carbon equivalent, the obtained graphite in the cast iron is the D-type graphite. The mechanical properties of castings are high, the tensile strength reaches over250MPa and the compactness is good. The melted iron has high carbon equivalent, thus greatly improving the casting properties of alloys, reducing the residual stress of the castings, contributing to good size stability and enhancing the machinability of the castings. The multiple compound inoculant adopts ladle bottom pouring process, namely, the compound inoculant is placed on the bottom of a ladle, then the melted iron is injected and the compound inoculant is continuously melted and absorbed in the process of melted iron injection, thereby reaching the satisfactory inoculation effect, therefore, the method is simple and the use is convenient.

The invention relates to a semiconductor device structure and a forming method thereof. The method includes the steps of sequentially generating a first medium layer and a second medium layer on a substrate, conducting etching treatment on the second medium layer to form a first injection area, conducting primary ion injection treatment on the first injection area to form a doping area, sequentially generating a third medium layer and a fourth medium layer on the second medium layer, conducting etching treatment on a side wall of the fourth medium layer to form a second injection area, conducting secondary ion injection treatment on the second injection area, and forming a source area and a body area in the substrate. According to the method, the medium layers can be generated on the firstinjection area of the substrate, etching is conducted on the side wall of the fourth medium layer to form the second injection area, secondary iron injection is conducted, the source area and the body area of a semiconductor device are formed in the substrate, and therefore the source area and the body area are accurately controlled, the channel length of the device is accurately controlled, andthe performance of an MOS device is improved.

A low-temperature molten iron injection dephosphorization pretreatment method belongs to the field of steel-making molten iron pretreatment. A foundry ladle for dephosphorization is used to hold molten iron and a molten iron roll-over transport vehicle is used to transport the molten iron to a position wherein the molten iron will be processed. With the adoption of a dense phase conveying mode for injection, molten iron temperature reduction caused by carrier gas is minimized. With the blowing of oxygen, the gas O is provided for a reaction, the purpose of heating is achieved, and the addition amount of oxide scale is reduced so as to minimize molten iron temperature reduction caused by the addition of oxide scale. Low oxygen blowing speed realizes soft blow of the molten iron. Decarburization and demanganization reaction times are reduced, thus achieving the purpose of preserving carbon and manganese and maintaining chemical heat to the maximum. Due to the above positive effects, molten iron temperature reduction is minimized and the molten iron is heated by the use of oxygen. Finally, the low-temperature molten iron undergoes injection dephosphorization and the dephosphorizationrate reaches more than 90%.

The invention relates to the field of mechanical equipment, in particular to an iron openwork beating device. The iron openwork beating device comprises a smelter, a first molten iron injection pipe and a first high-pressure air inlet pipe. Pig iron materials in the smelter is heated to be in a molten state through the smelter, and the first high-pressure air inlet pipe is communicated with the smelter so that high-pressure air can be provided to the interior of the smelter. The first molten iron injection pipe is communicated with molten iron in the smelter, a first control valve arranged on the first high-pressure air inlet pipe is opened, the molten iron is ejected upwards through the top end of the first molten iron injection pipe under the thrust of the high-pressure air, and splendid iron openwork is formed.

The invention discloses P-type high-concentration doped silicon and a technology for preparing a P-channel MOS (Metal Oxide Semiconductor) pipe of a BCD (Bipolar, Complementary Metal-Oxide-Semiconductor and Double-Diffusion Metal-Oxide-Semiconductor ) products, aiming at solving the problem of electricity leakage resulting from a lattice defect of the P-type high-concentration doped silicon manufactured with the prior art. A realization method of the technology of the P-type high-concentration doped silicon comprises the steps of conducting low-pressure deposition to form a silicon oxide dielectric layer, photoetching a substrate, defining an injection area, injecting boron ions in the defined injection area and conducting high-temperature annealing on the injected boron ions. According to the embodiment of the invention, before the P-type high-concentration doped silicon is prepared, the impact of the injection of the boron ions onto the surface of the silicon can be relieved by the low pressure deposition of the silicon oxide dielectric layer; the boron ions are injected when iron injection is conducted; as the molecular weight of the boron ions is smaller, the injected energy is smaller and the impact to the surface of the silicon is reduced; and in addition, as the injected impurities do not contain fluorine atoms, the defect problems caused by the fluorine atoms are avoided, and thus, the risk of generating the lattice defect is reduced and the probability of electricity leakage is lowered.

The invention discloses automatic embedding injection molding equipment for iron parts. The automatic embedding injection molding equipment comprises an injection molding machine board, a manipulator and a worktable, wherein the manipulator comprises a manipulator base, a transverse moving assembly and a mechanical arm module; the manipulator base is used for supporting the manipulator and assembling the manipulator in the injection molding equipment; the transverse moving assembly is fixed on the manipulator base and is used for driving mechanical arms to transversely move; the mechanical arm module comprises a first mechanical arm and a second mechanical arm; a suction tooling is arranged at the tail end of the first mechanical arm and is used for sucking workpieces; a clamping jaw is arranged at the tail end of the second mechanical arm and is used for grabbing an injection molding product; a plurality of sucking discs are arranged on the end face of the suction tooling; and the arrangement mode of the sucking discs is consistent with the positions where the iron parts are embedded into injection molding parts. The automatic embedding injection molding equipment disclosed by the invention has the advantages that high automatic degree is realized, and the injection molding efficiency is improved; and in addition, labor input is reduced, so that the cost is relatively reduced.

The invention discloses a preparation method of the SON type metal-oxide semiconductor field transistor, including the steps of low temperature injecting the neon ion with secondary different energy in the large beam current, forming the void layer at the lower part of the active region after high temperature anneal; removing the silicon nitride side wall on the shallow trough insulation, preparing the MOSFET through the routine CMOS technology. The preparation method providing the SON type metal-oxide semiconductor field transistor can generate the air bubble with higher density due to the low dose Ne iron injection, adopts the low temperature with different energy to form two layers of air bubble belts, which combines to be the high relative density monolayer inanition after high temperature anneal, thereby forming the ultra-shallow junction SON structure with the heat emission channel with simple technology and low cost. Most steps are completed by the routine CMOS technology, whichis convenient for the large scale integrated circuit industrial production and reduced in the production cost.

The invention discloses a high-performance spray gun for molten iron injection pretreatment. The high-performance spray gun comprises a connection segment, a gun body segment and an injection segment, which are sequentially communicated, wherein a swirling diffuser is arranged between the gun body segment and the injection segment and comprises an upper cone, a cylinder and a lower reversed cone, which are sequentially communicated; 2-4 nozzles are uniformly formed between a main pipe of the spray gun and a seal head in the circumferential direction of the spray gun and positioned in the side wall of the injection segment; swirling pieces obliquely arranged on the outer wall from the top end of the lower reversed cone to the bottom end surface of the injection segment and positioned above the nozzles. By strengthening three key kinetic parameters of molten iron injection pretreatment, the spray gun significantly improves the kinetic conditions of molten iron injection pretreatment and achieves the comprehensive purposes of improving the sulfur removal efficiency of injection pretreatment and the utilization rate of desulfurizer reaction, shortening the injection time and increasing the production capacity of desulfurization equipment.