Method for preparing SON type metal oxide semiconductor field effect pipe device

Abstract

The invention discloses a preparation method of the SON type metal-oxide semiconductor field transistor, including the steps of low temperature injecting the neon ion with secondary different energy in the large beam current, forming the void layer at the lower part of the active region after high temperature anneal; removing the silicon nitride side wall on the shallow trough insulation, preparing the MOSFET through the routine CMOS technology. The preparation method providing the SON type metal-oxide semiconductor field transistor can generate the air bubble with higher density due to the low dose Ne iron injection, adopts the low temperature with different energy to form two layers of air bubble belts, which combines to be the high relative density monolayer inanition after high temperature anneal, thereby forming the ultra-shallow junction SON structure with the heat emission channel with simple technology and low cost. Most steps are completed by the routine CMOS technology, which is convenient for the large scale integrated circuit industrial production and reduced in the production cost.

Description

technical field [0001] The invention relates to the technical field of VLSI manufacturing, in particular to a method for preparing a SON (Silicon-On-Nothing) metal-oxide-semiconductor field effect transistor (MOSFET) device with silicon as a heat dissipation channel. Background technique [0002] In order to improve the performance and performance-price ratio of integrated circuit chips, it is a main way to reduce the feature size of the device to increase the integration level. However, as the size of the device shrinks, power consumption and leakage current become the most concerned issues. Silicon-On-Insulator SOI (Silicon-On-Insulator) structure has become the preferred structure of deep submicron MOS devices because it can well suppress the short channel effect and improve the ability of devices to be scaled down. [0003] Along with the continuous development of SOI technology, the 2179th page of electronic device volume 147, 2000, the 11th phase in prior art literatu...

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Problems solved by technology

However, low-energy ion implantation will increase the divergence of ion beams and reduce production efficiency, so low-energy ion implantation has become a problem; at the same time, helium (He) and hydrogen (H) are both very light ions, and the range of ion implantation is relatively long. Difficult to control and get super shallow knot depth

In addition, implanting single crystal silicon (Si) with helium (He) to form a cavity must use a very high dose (usually greater than 10 16 cm -2 ), and helium (He) gas is a scarce resource in China, and its price is relatively high

Therefore, the above-mentioned prior art cannot really be applied to the current VLSI manufacturing process.

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