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Semiconductor device structure and method of forming the same

A device structure and semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as difficult control and poor device performance, and achieve the effect of improving performance

Active Publication Date: 2018-11-23
INVENTCHIP TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods are difficult to control in actual production, resulting in poor device performance

Method used

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  • Semiconductor device structure and method of forming the same
  • Semiconductor device structure and method of forming the same
  • Semiconductor device structure and method of forming the same

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Embodiment Construction

[0033] Various exemplary embodiments, features, and aspects of the present disclosure will be described in detail below with reference to the accompanying drawings. The same reference numbers in the figures indicate functionally identical or similar elements. While various aspects of the embodiments are shown in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.

[0034] The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustration." Any embodiment described herein as "exemplary" is not necessarily to be construed as superior or better than other embodiments.

[0035] In addition, in order to better illustrate the present disclosure, numerous specific details are given in the following specific implementation manners. It will be understood by those skilled in the art that the present disclosure may be practiced without some of the specific details. In some instances, methods, means, componen...

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Abstract

The invention relates to a semiconductor device structure and a forming method thereof. The method includes the steps of sequentially generating a first medium layer and a second medium layer on a substrate, conducting etching treatment on the second medium layer to form a first injection area, conducting primary ion injection treatment on the first injection area to form a doping area, sequentially generating a third medium layer and a fourth medium layer on the second medium layer, conducting etching treatment on a side wall of the fourth medium layer to form a second injection area, conducting secondary ion injection treatment on the second injection area, and forming a source area and a body area in the substrate. According to the method, the medium layers can be generated on the firstinjection area of the substrate, etching is conducted on the side wall of the fourth medium layer to form the second injection area, secondary iron injection is conducted, the source area and the body area of a semiconductor device are formed in the substrate, and therefore the source area and the body area are accurately controlled, the channel length of the device is accurately controlled, andthe performance of an MOS device is improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor technology, in particular to a semiconductor device structure and a method for forming the same. Background technique [0002] In high-voltage and high-current semiconductor devices (such as vertical double diffused metal oxide transistor VDMOS and lateral diffused metal oxide transistor LDMOS), it is necessary to form a doped body (body) region between the gate and source to make the device in A channel is formed and conducts when a voltage is applied. In related technologies, ion implantation and high-temperature annealing are usually used to achieve impurity diffusion, or large-angle ion implantation is used for doping. However, these methods are difficult to control in actual production, resulting in poor device performance. Contents of the invention [0003] In view of this, the present disclosure proposes a semiconductor device structure and a forming method thereof, which...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/66681H01L29/66712H01L29/7802H01L29/7816
Inventor 黄海涛张永熙陈伟
Owner INVENTCHIP TECH CO LTD
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