P-type high-concentration doped silicon and technology for preparing P-channel MOS (Metal Oxide Semiconductor) pipe of BCD (Bipolar, Complementary Metal-Oxide-Semiconductor and Double-Diffusion Metal-Oxide-Semiconductor) products

Abstract

The invention discloses P-type high-concentration doped silicon and a technology for preparing a P-channel MOS (Metal Oxide Semiconductor) pipe of a BCD (Bipolar, Complementary Metal-Oxide-Semiconductor and Double-Diffusion Metal-Oxide-Semiconductor ) products, aiming at solving the problem of electricity leakage resulting from a lattice defect of the P-type high-concentration doped silicon manufactured with the prior art. A realization method of the technology of the P-type high-concentration doped silicon comprises the steps of conducting low-pressure deposition to form a silicon oxide dielectric layer, photoetching a substrate, defining an injection area, injecting boron ions in the defined injection area and conducting high-temperature annealing on the injected boron ions. According to the embodiment of the invention, before the P-type high-concentration doped silicon is prepared, the impact of the injection of the boron ions onto the surface of the silicon can be relieved by the low pressure deposition of the silicon oxide dielectric layer; the boron ions are injected when iron injection is conducted; as the molecular weight of the boron ions is smaller, the injected energy is smaller and the impact to the surface of the silicon is reduced; and in addition, as the injected impurities do not contain fluorine atoms, the defect problems caused by the fluorine atoms are avoided, and thus, the risk of generating the lattice defect is reduced and the probability of electricity leakage is lowered.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing technology, in particular to a P-type high-concentration doped silicon and a BCD product P-channel MOS transistor manufacturing technology. Background technique [0002] Silicon that does not contain impurities is called intrinsic silicon. Doping specific impurities in intrinsic silicon can form N-type silicon or P-type silicon that exhibits conductive characteristics. Specifically, doping group V elements into intrinsic silicon (such as phosphorus, arsenic, and antimony) can form N-type silicon, and doping group III elements (such as boron) into intrinsic silicon can form P-type silicon. The industry uniformly stipulates that highly doped N-type silicon or P-type silicon is represented by a positive sign, and low-concentration doped N-type silicon or P-type silicon is represented by a negative sign. In the unsaturated condition, the higher the doping concentration in sil...

AI Technical Summary

Problems solved by technology

[0007] In view of this, the embodiment of the present invention provides a P-type high-concentration doped silicon and a BCD product P-channel MOS tube manufacturing process to solve the problem of P-type high-concentration doped silicon produced in the prior art due to lattice defects. Leakage problem

Images