39results about How to "Reduce the possibility of electric leakage" patented technology

The present invention relates to a system for operating a flying object that is flown from the ground. The flying object operation system includes a flying object that is filled with a gas therein to stay in the sky, a ground unit installed on the ground, a wire unit connecting the flying object to the ground unit, and a buoyancy-generation unit disposed on a side of the flying object to obtain buoyancy through friction with air, thereby transferring the obtained buoyancy to the flying object. In the present invention, since additional wind-derived buoyancy obtained by the buoyancy-generation unit connected to the flying object is further generated, sufficient buoyancy may be supplied to the flying object in a high-altitude environment to stably operate the flying object. Also, since power generated by using the wind power generation unit is transmitted to the ground through the wire unit, the flying object operation system may be utilized as wind power generation equipment.

The invention relates to a trench isolation structure and a manufacturing method thereof. The method comprises: forming a shallow trench with a wide top and a narrow bottom on the surface of a wafer; filling the shallow trench with silicon oxide by depositing; removing a part of the oxide by etching Silicon; form a silicon oxide corner structure at the corner of the top of the shallow trench by thermal oxidation; deposit silicon nitride on the wafer surface to cover the silicon oxide surface and the silicon oxide corner structure surface in the shallow trench; dry etch silicon nitride , removing the silicon nitride on the surface of the silicon oxide in the shallow groove, and forming a silicon nitride residue extending into the groove on the surface of the silicon oxide corner structure; using the silicon nitride residue as a mask, continue to etch downward to form a deep groove; Forming a silicon oxide layer on the sidewall and bottom of the deep trench; depositing polysilicon into the shallow and deep trenches; removing silicon nitride; forming silicon oxide in the shallow trench to cover the polysilicon. The shallow groove of the present invention has a relatively large size, and the formed trench isolation structure can reduce the possibility of electric leakage caused by high-voltage wiring above the trench isolation structure.

The invention discloses a vertical water-stop structure for water conservancy projects, which comprises a roadbed, a wall body, a base and a blocking plate. The base is located at the bottom of the water and connected to the water side of the roadbed. Rails are welded on the side wall of the body opposite to the column, and the base is also provided with a column; the invention also discloses a construction process of a vertical water-stop structure in a water conservancy project, which includes the following steps: S1: prefabricated concrete slab; S2 : Excavation of foundation pit; S3: Formwork; S4: Binding reinforcement cage; S5: Pouring; S6: Formwork removal; S7: Fixing movable parts. The invention has a novel structure and a simple structure. The blocking plate can automatically rise to a certain height according to the water level. When the water level is higher than the wall, the electric mechanism transmits electric energy through sound waves of a specific frequency, so that the sealing connection between the blocking plate and the track can be quickly realized. Thereby, the height of the vertical waterproof structure is increased, and the purpose of automatic flood prevention without manual operation is realized.

The invention relates to a lens module group, which comprises a housing, a lens holder used for containing lenses and a driving part which are arranged in the housing; wherein the driving part comprises a magnet fixed either in the housing or in the lens holder and a coil fixed either in the housing or in the lens holder; the lens module group also comprises an eccentrically pressed leaf spring which comprises at least three separating parts; power is supplied to the coil by two separating parts; each separating part comprises an attaching part attached to the lens holder, a fixing part fixedto the housing and an elastic part connected between the attaching part and the fixing part. As only two parts of the eccentrically pressed leaf springs are electrified, the lens module group greatlyreduces the possibility of electric leakage.

The invention discloses an airship nose cone locking device which comprises a locking mechanism and a rotating device. The locking mechanism and the rotating spindle of the rotating device are connected, and the rotating spindle rotates to realize the rotational adjustment of the locking mechanism; the locking mechanism comprises a locking support, a pitch rotating shaft, the pitch rotating shaftfixing the locking support on the rotating main shaft, the locking support is rotatable about the pitch rotating shaft, and the locking support is used for locking the airship nose cone; as that pitchrotation shaft and the rotating device are arrange, the follow-up effect of the locking mechanism is greatly increased, the locking damage of the airship is avoid, and the damage of the airship nosecone and the locking mechanism caused by accidental floating of the airship driven by the external environment is avoided.

The invention discloses a cable for corrosive soil and its matching installation process, belonging to the field of cable safety, a cable for corrosive soil and its matching installation process. The pipeline can lift the cables inside it, reduce its erosion by the corrosive soil outside, and play an effective anti-corrosion effect on the cables. In addition, with the cooperation of the internal structure of the anti-corrosion pipeline, the corrosion degree of the cables inside it can be reduced. It plays the role of real-time detection, so that the staff can make corresponding treatment in time, reduce the possibility of cable corrosion and leakage, and increase the safety of cables for corrosive soil. The invention can better adapt to corrosive soil, and is convenient for workers to install and fix cables.

The present disclosure teaches a member for supporting and / or protecting photovoltaic modules, which comprises fibers extending along an axial direction of the member and plastics as a matrix. The fibers include glass fibers, carbon fibers, metallic fibers and any combination thereof; the plastics include polyurethane. The weight of the fibers is about 30 wt.% ~95 wt.% relative to the total weight of the member. The present disclosure possesses mechanical strength and stiffness similar to aluminum profiles, good electrical insulation properties, resistance to corrosion and a coefficient of thermal expansion compatible with other materials, such as glass, used in photovoltaic modules.

The invention discloses P-type high-concentration doped silicon and a technology for preparing a P-channel MOS (Metal Oxide Semiconductor) pipe of a BCD (Bipolar, Complementary Metal-Oxide-Semiconductor and Double-Diffusion Metal-Oxide-Semiconductor ) products, aiming at solving the problem of electricity leakage resulting from a lattice defect of the P-type high-concentration doped silicon manufactured with the prior art. A realization method of the technology of the P-type high-concentration doped silicon comprises the steps of conducting low-pressure deposition to form a silicon oxide dielectric layer, photoetching a substrate, defining an injection area, injecting boron ions in the defined injection area and conducting high-temperature annealing on the injected boron ions. According to the embodiment of the invention, before the P-type high-concentration doped silicon is prepared, the impact of the injection of the boron ions onto the surface of the silicon can be relieved by the low pressure deposition of the silicon oxide dielectric layer; the boron ions are injected when iron injection is conducted; as the molecular weight of the boron ions is smaller, the injected energy is smaller and the impact to the surface of the silicon is reduced; and in addition, as the injected impurities do not contain fluorine atoms, the defect problems caused by the fluorine atoms are avoided, and thus, the risk of generating the lattice defect is reduced and the probability of electricity leakage is lowered.