4results about How to "Low dielectric" patented technology

The invention discloses a low-dielectric low-loss high-strength borosilicate glass ceramic composite material and a preparation method thereof, and belongs to the technical field of borosilicate glass ceramic composites.The low-dielectric low-loss high-strength borosilicate glass ceramic composite material is prepared from, by weight, 70% of low-alkali borosilicate glass ceramics with the low borosilicate ratio, 29% of Al2O3 and 1% of Bi2O3. The preparation method comprises the following steps: preparing low-alkali borosilicate glass ceramics with a high borosilicate ratio, melting the low-alkali borosilicate glass ceramics with the high borosilicate ratio and amorphous SiO2 at a set temperature to obtain the required low-alkali borosilicate glass ceramics with the low borosilicate ratio, and finally mixing and ball-milling the crushed and ground low-alkali borosilicate glass ceramics with Al2O3 and Bi2O3 to obtain the low-alkali borosilicate glass ceramics with the low borosilicate ratio. And finally, the borosilicate glass ceramic composite material is sintered at the temperature of 880-900 DEG C. The borosilicate microcrystalline glass ceramic composite material is low in dielectric, low in loss and high in strength.

The application belongs to the technical field of resin materials for copper-clad plates, and particularly relates to a carbon-hydrogen resin composition for prepreg and a preparation method thereof. The carbon-hydrogen resin composition is prepared from the following raw materials in parts by mass: hyperbranched modified prepolymer resin 90-100 parts, inorganic filler 15-25 parts, silane coupling agent 0.2-0.4 parts, crosslinking agent 10-20 parts, initiator 0.8-1.5 parts, dibutyltin dilaurate 0.1-0.3 parts, antioxidant 0.5-1 part, and toluene 50-80 parts. The carbon-hydrogen resin composition prepared by the application has low dielectricity, high thermal conductivity, high heat resistance, high toughness, and excellent processing forming property.

The present application relates to the technical field of insulation film, especially to the field of IPC G03F, more particularly to a preparation method of a photosensitive integrated circuit stacked insulation film. The present application is based on the actual market demand, and scientifically designs the formula of the stacked insulation film material by combining basic research with industrial development, so as to realize the manufacturing of the fine line laminated adhesive film with low thermal expansion coefficient, high frequency low dielectric, low loss, high bonding force. The material has good performance in insulation, mechanics, heat conduction and the like, and does not depend on the expensive precision drilling equipment imported, and these performances enable it to replace ABF in the electronic field such as microchip integrated insulation technology, and have wide application prospect.

The invention provides ternary copolymerized polyimide, a polyimide film and a preparation method and application thereof, the ternary copolymerized polyimide is prepared from the following monomer raw materials through polymerization and imidization reaction: diamine monomer: 9, 9-bis (4-aminophenyl) fluorene; the dianhydride monomer comprises hexafluorodianhydride and 9, 9-bis (3, 4-dicarboxyphenyl) fluorene dianhydride; wherein the total molar weight ratio of the diamine monomer to the dianhydride monomer is 1: 1; in the dianhydride monomer, the molar ratio of the 6FDA to the BPAF is (0.8-1.2): 1. According to the present invention, the traditional thought that the transparency is improved by introducing the fluorenyl monomer at the low content is abandoned, and the high-proportion rigid double fluorenyl structure (BAFL and BPAF) and the flexible fluorine-containing structure (6FDA) are innovatively adopted to perform the ternary polymerization at the specific ratio so as to produce the significant synergistic effect; the obtained polyimide film has high heat resistance (Tg is greater than or equal to 420 DEG C), low thermal expansion coefficient (CTE is less than or equal to 20 ppm / K), low dielectric constant (Dk is less than or equal to 3.5 under 10 GHz) and high transparency (light transmittance at 450 nm is greater than or equal to 85%), and is especially suitable for high-performance flexible display substrates.