Preparation method of high-frequency low-dielectric material

A low-dielectric material, high-frequency technology, applied in coatings and other directions, can solve problems such as poor dielectric properties, complex processes, and material application limitations, and achieve the effects of low dielectric constant, simple process, and excellent comprehensive performance.

Active Publication Date: 2020-10-30
佛山(华南)新材料研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to propose a method for preparing a high-frequency low-dielectric material to solve the problems in the prior art that the dielectric properties are poor, multi-layer superimposed hot pressing is required, the process is complex, and the application of materials is limited.

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  • Preparation method of high-frequency low-dielectric material
  • Preparation method of high-frequency low-dielectric material
  • Preparation method of high-frequency low-dielectric material

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Embodiment 1

[0032] In this embodiment, a method for preparing a high-frequency low-dielectric material is provided, which includes the following steps:

[0033] S1. Weigh the polytetrafluoroethylene emulsion and the filler and add them to the disperser in turn, fully disperse and evenly obtain the dispersion system of the polytetrafluoroethylene emulsion and the filler, and in this embodiment, the conditions set in the disperser are: The stirring speed is 10-1000r / min, and the stirring time is 20-30min; according to the volume ratio, the addition ratio of the polytetrafluoroethylene emulsion and the filler is: 1:0.2-9; the filler is silicon micropowder, One or more of titanium dioxide and barium titanate;

[0034] S2. Add ethanol to the dispersion system of polytetrafluoroethylene emulsion and filler, continue to stir until described dispersion system demulsification, obtain the material that forms dough; The addition ratio of described polytetrafluoroethylene emulsion and described ethan...

Embodiment 2

[0039] This embodiment should be understood as at least including all the features of the foregoing embodiments, and further explained on the basis of it, this embodiment provides a preparation method of a high-frequency low-dielectric material, as follows: Weigh 100g of polytetrafluoroethylene Emulsion, 25g of silicon micropowder with a particle size of 10 microns, was sequentially added to the disperser, dispersed at a rate of 500r / min for 10min, added ethanol, stirred continuously until all the emulsion was broken, and a dough-like material was obtained. Place the dough-like material at 40°C, start the mill, and adjust the temperature of the mill to 40°C for 5 minutes, and then roll it through the roller press, and the temperature of the roller press is 40°C. The pressure is 5MPa, and it is pressed into a sheet material at one time. The sheet material is placed at a temperature of 45°C for drying. Drying at 55°C, followed by heat treatment for 1 hour, the heat treatment tem...

Embodiment 3

[0041] This embodiment should be understood as at least including all the features of any one of the foregoing embodiments, and further explained on the basis of it, this embodiment provides a preparation method of a high-frequency low-dielectric material, specifically as follows: Weigh 100 g of Polytetrafluoroethylene emulsion, 25g of silicon micropowder with a particle size of 3 microns, was sequentially added to the disperser, dispersed at a rate of 500r / min for 10min, added ethanol, stirred continuously until all the emulsions were broken, and a dough-like material was obtained. Place the dough-like material at 40°C, start the mill, and adjust the mill to 60°C for 15 minutes, and then roll it through a roller press with a temperature of 50°C and a pressure of 30MPa. Once pressed into a sheet material, place the sheet material at a temperature of 45°C for drying, place the dried sheet material in PTFE emulsion for one dip, and place it at a temperature of 55°C Drying under ...

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Abstract

The invention provides a preparation method of a high-frequency low-dielectric material. A dispersion system of a polytetrafluoroethylene emulsion and a filler is formed, the filler is fully dispersedin the polytetrafluoroethylene emulsion, ethanol is added for demulsification, then an open milling process is carried out, so that the system is fiberized, a material system with higher porosity isobtained, a film material is prepared through one-time forming of a roller press, and finally, the film material is impregnated in polytetrafluoroethylene emulsion to obtain a material with good strength, low dielectric and low water absorption, so that the material is applied to more fields. Generally, the problems that in the prior art, the dielectric property is poor, multi-layer stacking heating pressure is needed, the process is complex, and material application is limited can be effectively solved.

Description

technical field [0001] The invention relates to the field of material preparation, in particular to a method for preparing a high-frequency low-dielectric material. Background technique [0002] In the prior art, the material is obtained by glass fiber compounding polytetrafluoroethylene, and the other is the tetrafluoro emulsion coating and stripping method to obtain the corresponding material. Glass fiber composite polytetrafluoroethylene is to soak glass fiber in polytetrafluoroethylene emulsion and then dry to obtain a composite plate of glass fiber and polytetrafluoroethylene. The PTFE emulsion coating method is to coat the PTFE emulsion on the substrate, then subject the substrate to a heat treatment above 250 degrees, and then peel off the PTFE film from the substrate, stack multiple layers, under a pressure of 10MPa or more , at a temperature greater than 200 degrees, press together to form a PTFE sheet. [0003] For example, the patent No. CN109486067A discloses a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L27/18C08K3/36C08K3/22C08K3/24C08J5/18C08J7/00C08J7/04
CPCC08J5/18C08J7/08C08J7/0427C08J2327/18C08J2427/18C08K3/36C08K2003/2241C08K3/24
Inventor 侯远梁希亭江建勇胡澎浩
Owner 佛山(华南)新材料研究院
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