Preparation method of high light transmission and low dielectric fluorinated graphene/polyimide composite film

A technology of fluorinated graphene and polyimide, which is applied in the field of preparation of high light transmittance and low dielectric fluorinated graphene/polyimide composite films, can solve the problems of decreased light transmittance, limitation, etc. High mechanical strength, low dielectric, simple and controllable effects

Active Publication Date: 2019-01-22
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually the preparation and composite process of fluorinated graphene are not well controlled, which can easily cause a serious drop in light transmittance, which limits the application of this packaging material in the field of optoelectronics

Method used

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  • Preparation method of high light transmission and low dielectric fluorinated graphene/polyimide composite film
  • Preparation method of high light transmission and low dielectric fluorinated graphene/polyimide composite film
  • Preparation method of high light transmission and low dielectric fluorinated graphene/polyimide composite film

Examples

Experimental program
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Effect test

Embodiment 1

[0038] A method for preparing high light transmittance and low dielectric fluorinated graphene / polyimide composite film is carried out according to the following steps:

[0039] Step 1. Prepare the NMP suspension of fluorinated graphene: add fluorinated graphite to the solvent to obtain a fluorinated graphite suspension with a concentration of 1 mg / ml; then add diamine monomer to the fluorinated graphite suspension and place it in a sealed container The reaction kettle is hydrothermally intercalated at 85°C for 6 hours. After the hydrothermal intercalation reaction, ultrasonic peeling is performed for 25 hours. After centrifugation, the upper suspension is taken (the upper suspension is a solvent with fluorinated graphene), and the suspension Add 20 mL of NMP to the solution and distill under reduced pressure; where the solvent is acetonitrile, and the mass ratio of diamine monomer to fluorinated graphite is 1:10;

[0040] Step 2. Under the protection of inert gas, slowly add the N...

Embodiment 2

[0045] A method for preparing high light transmittance and low dielectric fluorinated graphene / polyimide composite film is carried out according to the following steps:

[0046] Step 1. Prepare the NMP suspension of fluorinated graphene: add fluorinated graphite to the solvent to obtain a fluorinated graphite suspension with a concentration of 1.5 mg / ml; then add diamine monomer to the fluorinated graphite suspension and place In a closed reactor, the hydrothermal intercalation reaction was conducted at 85°C for 8 hours. After the hydrothermal intercalation reaction, ultrasonic peeling was performed for 30 hours. After centrifugation, the upper suspension was taken (the upper suspension is a solvent suspended in fluorinated graphene), and Add 20 mL of NMP to the suspension and distill under reduced pressure; where the solvent is acetonitrile, and the mass ratio of diamine monomer to fluorinated graphite is 1:10;

[0047] Step 2. Under the protection of inert gas, slowly add the NMP...

Embodiment 3

[0052] A method for preparing high light transmittance and low dielectric fluorinated graphene / polyimide composite film is carried out according to the following steps:

[0053] Step 1. Prepare the NMP suspension of fluorinated graphene: add fluorinated graphite to the solvent to obtain a fluorinated graphite suspension with a concentration of 2mg / ml; then add diamine monomer to the fluorinated graphite suspension and place it in an airtight The reaction kettle is hydrothermally intercalated at 85°C for 6 hours. After the hydrothermal intercalation reaction, ultrasonic peeling is performed for 48 hours. After centrifugation, the upper suspension is taken (the upper suspension is a solvent with fluorinated graphene), and the suspension Add 20mL NMP to the solution and distill under reduced pressure; where the solvent is acetonitrile, and the mass ratio of diamine monomer to fluorinated graphite is 1:15;

[0054] Step 2. Under the protection of inert gas, slowly add the NMP suspensio...

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Abstract

The invention discloses a preparation method of a high light transmission and low dielectric fluorinated graphene/polyimide composite film. The method is carried out according to the steps of: under an inert gas condition, adding an NMP suspension of fluorinated graphene into polyamide acid dropwise, and performing stirring continuously for 6-10h to obtain a mixed solution; subjecting the solutionto film coating and conducting thermal imidization, i.e. under an inert gas condition, conducting heat preservation at 80DEG C-300DEG C for 7-10h, thus obtaining the fluorinated graphene/polyimide composite film. The matrix raw material polyamide acid adopted by the invention is easily available, the preparation of fluorinated graphene is simple and controllable, and through thermal curing of fluorinated graphene and polyamide acid, compounding of polyimide and fluorinated graphene is realized. The fluorinated graphene/polyimide composite film obtained by the invention maintains the excellentproperties of polyimide, and also realizes low dielectric and high mechanical strength by compounding with fluorinated graphene.

Description

Technical field [0001] The invention belongs to the technical field of film preparation, and specifically relates to a method for preparing a fluorinated graphene / polyimide composite film with high light transmission and low dielectric. Background technique [0002] The microelectronics industry has become one of the industries that have an important impact on the country's economy, politics, society, security, and culture. The market demand for miniaturization, thinning, high performance, multi-function, high reliability, and low cost of electronic production has led to a sharp increase in integrated circuit packaging density; microelectronics packaging technology covers a wide range of content , Involving many major scientific and engineering technical fields. The major changes that are currently taking place in the microelectronics industry make the mature microelectronic packaging process and packaging materials face serious challenges. The advent of the 0.13-0.10μm era wil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/18C08L79/08C08G73/10C08K3/04
CPCC08G73/1039C08G73/1067C08J5/18C08J2379/08C08K3/04C08L79/08
Inventor 封伟尹晓东冯奕钰
Owner TIANJIN UNIV
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